Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
批准号:
15360013
负责人:
URAOKA Yukiharu
金额:
$8.64万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
Development of biotechnology has been remarkable,which enables us to fabricate nanoscale structures using biomolecules as nanoblocks. A combination生物技术和半导体技术是一种promising candidate for enabling abreakthrough in the fabrication of advanced electronic devices. the main features of biotechnologyfrom a nanotechnology point of view are as follows:Size distribution is extremely small on the molecular scale. Biomolecules can form nanostructures ina self-assembling manner,这是一种基础制造技术(bottom-up fabrication technology)。biomineralize inorganic materials at its surface. Utilizing these characteristics我们提供一个novel bottom-up method for fabricating nanostructure with a very small sizedistribution.We have a floating nano-dot gate metal-oxide-semiconductor field effecttransistor . The floating nano-dots gate MOSFET是expected to be promising candidate组件for next-generation memory such as flash memory.它是必需的floatingnanod-dots have a small size distribution and should take the form of a high-density monolayer. We采用cage-shaped protein ferritin to satisfy这些要求。ferritin has a proteinshell, its outer and inner diameters are 12 nm and 7 nm, respectively,这是fairly high thermal and pH stabilities compared with其他proteins. The inner cavity canaccommodate an iron oxide core (5fe_2o_3 / 9h_2o). Therefore,iron oxide nano-dots with small size distribution can be artificially synthesized with ferritin这也可以解释ferritin molecules可以形成一个大的两种不同的crystala high-density monolayer. Combining these characteristics我们构造一个monolayer of ferritin with iron oxide cores。
英文摘要
Development of biotechnology has been remarkable, which enables us to fabricate nanoscale structures using biomolecules as nanoblocks. A combination of biotechnology and semiconductor technology is emerging as a promising candidate for enabling a breakthrough in the fabrication of advanced electronic devices. The main features of biotechnology from a nanotechnology point of view are as follows : Size distribution is extremely small on the molecular scale. Biomolecules can form nanostructures in a self-assembling manner, which is an essential part of the bottom-up fabrication technology. Protein has the ability to biomineralize inorganic materials at its surface. Utilizing these characteristics, we propose a novel bottom-up method for fabricating nanostructure with a very small size distribution.We have a floating nano-dot gate metal-oxide-semiconductor field effect transistor(MOSFET). The floating nano-dots gate MOSFET is expected to be promising candidate component for next-generation memory such as flash memory. It is required that the floating nanod-dots have a small size distribution and should take the form of a high-density monolayer. We adopted the cage-shaped protein ferritin to satisfy these requirements. Ferritin has a protein shell, its outer and inner diameters are 12 nm and 7 nm, respectively, and it has fairly high thermal and pH stabilities compared with other proteins. The inner cavity can accommodate an iron oxide core (5Fe_2O_3・9H_2O). Therefore, iron oxide nano-dots with small size distribution can be artificially synthesized with ferritin molecules. It has also demonstrated that ferritin molecules can form a large two-dimensional crystal that is a high-density monolayer. Combining these characteristics, we fabricated a monolayer of ferritin with iron oxide cores.
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フェリチンタンパクのSi基板への直接吸着
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DOI:
--
发表时间:
2003
期刊:
電子情報通信学会 信学技報 SDM2003
影响因子:
--
作者:
[川嶋宏之, 彦野太樹夫, 山田圭佑, 浦岡行治, 山下一郎, 冬木隆]
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冬木隆
Physical and electrical caharacterization of PLCVD Nitride HfSiO gate dielectrics
PLCVD 氮化物 HfSiO 栅极电介质的物理和电学特性
DOI:
--
发表时间:
2004
期刊:
第51回応用物理学会関係連合講演会 31a-C-4
影响因子:
--
作者:
[P.Punchaipetch, T.Okamoto, H.Nakamura, Y.Uraoka, T.Fuyuki, S.Horii]
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S.Horii
プラズマ援用化学気相堆積法を用いて堆積したSiナノドットへの電子注入
使用等离子体辅助化学气相沉积将电子注入沉积的硅纳米点
DOI:
--
发表时间:
2004
期刊:
第51回応用物理学会関係連合講演会 28p-ZH-2
影响因子:
--
作者:
[市川和典, 猪飼順子, 彦野太樹夫, 矢野裕司, 畑山智亮, 冬木隆, 林司]
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使用侧壁电极型PECVD的硅纳米点存储器
DOI:
--
发表时间:
2004
期刊:
電子情報通信学会 信学技報 SDM2004-206
影响因子:
--
作者:
[市川和典, 向正人, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆]
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冬木隆
高分子電解質修飾基板を用いたフェリチンタンパクの高密度選択的吸着
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DOI:
--
发表时间:
2005
期刊:
第52回応用物理学会関係連合講演会 29a-YL-6
影响因子:
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作者:
[三浦篤志, 浦岡行治, 冬木隆, 山下一郎]
通讯作者:
山下一郎
共 15 条
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批准号:16H04332
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.73万
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财政年份:2016
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负责人:URAOKA Yukiharu
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Low temperature polycrystalline thin film transistors for next generation high performance display
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批准号:23360137
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财政年份:2011
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负责人:URAOKA Yukiharu
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依托单位:
Laser Crystallization of non two-dimensional Si substrates and their device application
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批准号:20246006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$20.97万
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财政年份:2008
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负责人:URAOKA Yukiharu
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依托单位:
Research of Bio-nano Display using Ferritin Protein
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批准号:17360164
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:2005
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负责人:URAOKA Yukiharu
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依托单位:
海外基金