Low temperature polycrystalline thin film transistors for next generation high performance display

在这项研究中，我们提出了高性能薄膜晶体管（TFT）和无机电致发光面板的制造。对于tft的制备，主要进行了硅薄膜在水中的结晶、通道表面的失活和杂质的活化。对于无机EL的制备，主要采用微波辐照增强光强和雾化减薄荧光粉层的方法。特别是利用探针显微镜进行局部电子性能分析，利用发射显微镜进行热载流子分析，以提高性能和可靠性。我们成功地演示了在塑料基板上的面板操作。

In this study, we proposed the fabrication of high performance thin film transistors (TFT) and inorganic electro luminescence panel. For the fabrication of TFTs, crystallization of Si thin film in water, inactivation of channel surface and activation of impurity were mainly performed. For the fabrication of inorganic EL, enhancement of light intensity by irradiation of micro wave and thinning of phosphor layer by atomization were mainly performed. In particular, local analysis of electronic property using probe microscope and hot carrier analysis using emission microscope were performed to improve the performance and reliability. Successfully we could demonstrate the panel operation on plastic substrate.