Low temperature polycrystalline thin film transistors for next generation high performance display
用于下一代高性能显示器的低温多晶薄膜晶体管
基本信息
- 批准号:23360137
- 负责人:
- 金额:$ 12.65万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2011
- 资助国家:日本
- 起止时间:2011-04-01 至 2014-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this study, we proposed the fabrication of high performance thin film transistors (TFT) and inorganic electro luminescence panel. For the fabrication of TFTs, crystallization of Si thin film in water, inactivation of channel surface and activation of impurity were mainly performed. For the fabrication of inorganic EL, enhancement of light intensity by irradiation of micro wave and thinning of phosphor layer by atomization were mainly performed. In particular, local analysis of electronic property using probe microscope and hot carrier analysis using emission microscope were performed to improve the performance and reliability. Successfully we could demonstrate the panel operation on plastic substrate.
在本研究中,我们提出了高性能薄膜晶体管(TFT)和无机电致发光面板的制造。薄膜晶体管的制备主要包括硅薄膜的水晶化、沟道表面钝化和杂质的活化。对于无机EL的制造,主要进行了通过微波照射来增强光强度和通过雾化来减薄磷光体层。特别是,使用探针显微镜和热载流子分析,使用发射显微镜进行局部分析的电子性能,以提高性能和可靠性。我们可以成功地在塑料基板上演示面板操作。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Polycrystalline Silicon Thin-Film Transistor Utilizing Self-Assembled Monolayer for Crystallization
利用自组装单层结晶的多晶硅薄膜晶体管
- DOI:
- 发表时间:2013
- 期刊:
- 影响因子:2.1
- 作者:Yosuke Tojo;Atsushi Miura;Yasuaki Ishikawa;Ichiro Yamashita and Yukiharu Uraoka
- 通讯作者:Ichiro Yamashita and Yukiharu Uraoka
Themal Distribution in Amorphous InSnZnO Thin-Film Transistor
非晶 InSnZnO 薄膜晶体管的热分布
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:Satoshi Urakawa;Shigekazu Tomai;Yoshihiro Ueoka;Haruka Yamazaki;Masashi Kasami;Koki Yano;Dapeng Wang;Mamoru Furuta;Masahiro Horita;Yasuaki Ishikawa;and Yukiharu Uraoka
- 通讯作者:and Yukiharu Uraoka
Nonvolatile flash memory based on biologically-integrated hierarchical nanostructures.
基于生物集成分层纳米结构的非易失性闪存。
- DOI:10.1021/la402742f
- 发表时间:2013
- 期刊:
- 影响因子:3.9
- 作者:Sano,K.;Miura,A.;Shiba,K.;et al
- 通讯作者:et al
Thin Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing
在绿光激光退火形成的双层多晶硅薄膜上制造薄膜器件
- DOI:10.1143/jjap.51.03ca03
- 发表时间:2012
- 期刊:
- 影响因子:1.5
- 作者:今泉悠佑;植田義幸;松本直樹;仙波伸也;浅田裕法;岸本堅剛;小柳剛;西永慈郎;Koji Yamasaki
- 通讯作者:Koji Yamasaki
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URAOKA Yukiharu其他文献
URAOKA Yukiharu的其他文献
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{{ truncateString('URAOKA Yukiharu', 18)}}的其他基金
Highly reliable GaN power device fabricated using supercritical water
使用超临界水制造的高可靠性 GaN 功率器件
- 批准号:
16H04332 - 财政年份:2016
- 资助金额:
$ 12.65万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Laser Crystallization of non two-dimensional Si substrates and their device application
非二维硅衬底激光晶化及其器件应用
- 批准号:
20246006 - 财政年份:2008
- 资助金额:
$ 12.65万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Research of Bio-nano Display using Ferritin Protein
利用铁蛋白进行生物纳米显示的研究
- 批准号:
17360164 - 财政年份:2005
- 资助金额:
$ 12.65万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
用于半导体制造纳米级工艺的铁蛋白二维结晶
- 批准号:
15360013 - 财政年份:2003
- 资助金额:
$ 12.65万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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