Structures and electronic states of atomic-organic molecule wires on compound semiconductor surfaces.
化合物半导体表面原子有机分子线的结构和电子态。
基本信息
- 批准号:15560018
- 负责人:
- 金额:$ 1.66万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We found that hydrogen is adsorbed on one P atom of a P-P dimer on a GaP(001) surface using high-resolution electron energy loss spectroscopy (HREELS), scanning tunneling spectroscopy (STM), synchrotron radiation photoemission spectroscopy (SRPES), leading to the (2x1) reconstruction. It was reported that pyrazine might show metallic property if it bridges between electrodes. In order to check this the pyrazine was adsorbed on an InP(001)-(2x4) surface. It was found that pyrazine was adsorbed between In-In dimer. However, the amount of pyrazine adsorbed was very small. Since we need more pyrazine on the surface to study the electronic states, we are trying to increase the amount. For Si(001)-(2x1) pyrazine is adsorbed between Si-Si dimer, leaving a unpaired electrons on Si atoms of unbonded Si atoms. Then one dimensional Si atom-pyrazine wires were formed. Since the N atoms of pyrazine were bonded to silicon, resonance of pai electrons on the pyrazine ring cannot occur. This implies that the pyrazine is not metallic.
用高分辨电子能量损失谱(HREELS)、扫描隧道谱(STM)、同步辐射光电子能谱(SRPES)发现氢吸附在GaP(001)表面P-P二聚体的一个P原子上,导致(2x1)重构。有报道称,如果连接在电极之间,吡嗪可能会显示出金属性质。为了验证这一点,将吡嗪吸附在InP(001)-(2x4)表面上。结果表明,吡嗪被吸附在In-In二聚体之间。但是,吡嗪的吸附量很小。由于我们在表面上需要更多的吡嗪来研究电子态,我们正在尝试增加数量。由于Si(001)-(2x1)吡嗪被吸附在Si-Si二聚体之间,在未键合的Si原子上留下未成对的电子。在此基础上形成了一维的硅原子-吡嗪线。由于吡嗪的N原子键合在硅上,吡嗪环上的PAI电子不可能发生共振。这意味着吡嗪不是金属的。
项目成果
期刊论文数量(35)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High-resolution XPS analysis of GaP(001),(111)A, and (111)B surfaces passivated by (NH4)2Sx solution
(NH4)2Sx 溶液钝化的 GaP(001)、(111)A 和 (111)B 表面的高分辨率 XPS 分析
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tamio Endo;Takahisa Sakurada;Ajay K.Sarkar;Masanori Okada;M.Shahabuddin^*;Y.Suzuki
- 通讯作者:Y.Suzuki
AES and XPS studies of a GaP(001) surface treated by S2C12 and P2S2/(NH4)2Sx
经过 S2C12 和 P2S2/(NH4)2Sx 处理的 GaP(001) 表面的 AES 和 XPS 研究
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tamio Endo;Masanori Okada;Michi Ogata;Takahisa Sakurada;Ajay K. Sarkar;K.Z.Liu
- 通讯作者:K.Z.Liu
Fabrication of a P-stabilized InP(001) surface at low pressure and temperature using t-butylphosphine (TBP)
使用叔丁基膦 (TBP) 在低压和低温下制备 P 稳定的 InP(001) 表面
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tamio Endo;Kouji Yoshii;Takahisa Sakurada;Michi Ogata;Ajay K. Sarkar;Masanori Okada;Hidetaka Nakashima;Y.Suzuki;Takeo Ejima;Y.Fukuda
- 通讯作者:Y.Fukuda
High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2Sx solution
对 (NH4)2Sx 溶液钝化的 GaP(001)、(111)A 和 (111)B 表面进行高分辨率 XPS 分析
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Y.Suzuki;N.Sanada;M.Shimomura;Y.Fukuda
- 通讯作者:Y.Fukuda
Surface structure of phosphorus -terminated GaP(001)-(2x1)
磷端GaP(001)-(2x1)的表面结构
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tamio Endo;Shin-ichi Iwasaki;Kouji Yoshii;Takahisa Sakurada;Michi Ogata;Ajay K. Sarkar;Josep Nogues;Juan Munoz;Jose Colino;N.Kadotani
- 通讯作者:N.Kadotani
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
FUKUDA Yasuo其他文献
FUKUDA Yasuo的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('FUKUDA Yasuo', 18)}}的其他基金
Study of self-organization of In atomic wires on a GaP(001) surface, the surface structure, and electronic states.
研究GaP(001)表面In原子线的自组织、表面结构和电子态。
- 批准号:
12650028 - 财政年份:2000
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
STUDY OF SURFACE REACTION IN MOCVD AND ALE USING IN AND P COMPOUNDS
用In和P化合物研究MOCVD和ALE中的表面反应
- 批准号:
07640770 - 财政年份:1995
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Analysis of clonality in odontogenic tumors by PCR assay of X chromosome gene
X染色体基因PCR分析牙源性肿瘤的克隆性
- 批准号:
07671969 - 财政年份:1995
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)














{{item.name}}会员




