Study of self-organization of In atomic wires on a GaP(001) surface, the surface structure, and electronic states.

研究GaP(001)表面In原子线的自组织、表面结构和电子态。

• 批准号: 12650028
• 负责人: FUKUDA Yasuo
• 金额: $ 1.66万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650028/
• 关键词: atomic wire; Indium; GaP; t-butylphosphine; triethylindium; surface; adsorption; decomposition; GaP(001); ターシャリブチルフォスフィン; トリエチルインジウム

Fabrication of a GaP(001)-(2x1) surface terminated by P atoms has not been investigated. Therefore, we have first studied adsorption and decomposition of t-butylphosphine (TBP), which is a typical phosphorus source in MOVPE, on the InP(001)-(2x4) surface terminated by indium. The following results are obtained. (1) TBP is adsorbed on Ga dimer on the surface and the (3x2) structure is partially formed at 350 ℃. (2) The (2x1) surface is formed through a disordered surface as increasing in exposure of TBP. Next we studied adsorption and decomposition of triethylindium as an In source on the (2x1) surface to fabricate In atomic wires. The following results are obtained. (1) TEI is adsorbed molecularly at 300 K and decomposed into ethyl-radical and ethylene. (2) The activation energy for desorption of the radical is estimated to be 93 KJ/mol. The fabrication of the wires on the (2x4) and (2x1) surface has been performed. However, the wires were not fabricated on the (2x4) surface. It is found that the (4x1) structure is formed on the (2x1) surface at 250 ℃ above 600,000 L of TBP. STM images indicate that the atomic wires are formed on the surface. The In atomic wires are, for the first time, fabricated on compound semiconductor surfaces. The detailed structure, electronic states, and physical properties are being investigated.

以P原子为末端的GaP(001)-(2x1)表面的制备还没有被研究过。因此，我们首先研究了MOVPE中典型的磷源叔丁基膦(TBP)在InP(001)-(2x4)面上的吸附和分解。得到了以下结果。(1)TBP吸附在表面的Ga二聚体上，在350℃时部分形成(3x2)结构。(2)随着TBP曝光量的增加，(2×1)表面由无序表面形成。接下来，我们研究了三乙基锂作为In源在(2x1)表面的吸附和分解，以制备原子线。得到了以下结果。(1)TEI在300K时被分子吸附，分解为乙基和乙烯。(2)自由基脱附的活化能为93KJ/mol。在(2x4)和(2x1)表面上进行了导线的制作。然而，这些线并不是在(2x4)表面上制造的。结果表明，在600,000℃以上的(2x1)面上形成了(4x1)结构。STM图像表明，原子线是在表面形成的。In原子线首次被制造在化合物半导体表面上。详细的结构、电子态和物理性质正在研究中。

项目成果

Y.Fukuda et al.: "Decomposition mechanism of triethylindium (TEI) on a GaP(001)-(2x1) surface studied by LEED, STM, TPD, and HREELS"J. Korean Vacuum Society. 9(No.S2). 35-38 (2000)

Y.Fukuda 等人：“通过 LEED、STM、TPD 和 HREELS 研究了 GaP(001)-(2x1) 表面上三乙基铟 (TEI) 的分解机制”J。

Y. Fukuda et al.: "Fabrication of a P-stabilized GaP(001)-(2x1) surface at very low pressure studied by LEED, STM, AES, and RHEED"J. Crystal Growth. 221. 26-30 (2000)

Y. Fukuda 等人：“LEED、STM、AES 和 RHEED 研究了极低压下 P 稳定的 GaP(001)-(2x1) 表面的制造”J。

Y.Fukuda et al.: "Decomposition mechanism of triethylindium(TEI) on a GaP(001)-(2x1) surface studied by LEED, STM, TPD, and HREELS"J.Korean Vacuum Society. 9(No.S2). 35-38 (2000)

Y.Fukuda 等人：“通过 LEED、STM、TPD 和 HREELS 研究 GaP(001)-(2x1) 表面上三乙基铟 (TEI) 的分解机制”J.韩国真空协会。

Y.Fukuda et al.: "Adsorption and decomposition of triethylindium(TEI) on an InP(001)-(2x4) surface studied by STM, TPD, and HREELS"Surface Science. (予定).

Y. Fukuda 等人：“通过 STM、TPD 和 HREELS 研究了 InP(001)-(2x4) 表面上的三乙基铟 (TEI) 的吸附和分解”表面科学（计划中）。

Y.Fukuda et al.: "Decomposition of triethylindium (TEI) on a GaP(001)-(2x1) surface studied by LEED, STM, TPD, and HREELS"Applied Surface Science. (予定).

Y. Fukuda 等人：“通过 LEED、STM、TPD 和 HREELS 研究 GaP(001)-(2x1) 表面上的三乙基铟 (TEI) 分解”应用表面科学（计划）。