STUDY OF SURFACE REACTION IN MOCVD AND ALE USING IN AND P COMPOUNDS

InP是一种很有潜力的高速光器件材料。InP薄膜的制备通常采用分子束外延（MBE）、金属有机化学气相沉积（MOCVD）等方法。从实用的角度来看，MOCVD是制备InP薄膜的一种有效方法。由于薄膜是由复杂的金属有机化合物在半导体衬底上的表面化学反应形成的，因此应控制反应以获得良好质量的样品。因此，有必要阐明MOCVD制备薄膜的反应机理，反应的第一步是吸附，随后在衬底表面发生分解和反应，形成薄膜，因此，研究金属有机化合物在衬底表面的吸附和分解是非常重要的。薄膜与衬底之间的界面是由化合物的第一次吸收和随后的分解所控制的，它强烈地影响着器件的电学性能。 ...更多信息 ces.利用AES，PXS，UPS，STM，TPD，HREELS，RHEED等方法研究了MOCVD和ALE的前驱体三乙基铟（TEI），三甲基膦（MP），三乙基膦（TEP）和叔丁基膦（TBP）在Si（111）-7x7，Si（001）和GaP（001）表面上的吸附和分解，得到以下结果. TMP优选地在Si（111）-7x7表面上的中心吸附原子位点上吸收。TEI和TEP在室温下在Si（001）和GaP（001）表面上分子吸收，并分解为乙烯和氢，分别在表面上留下In和P原子。3.室温下TBP在Si（001）和GaP（001）表面部分解离，分解为异丁烯和氢气，P原子留在表面. TEI、TEP和TBP通过β-氢化物消除而分解。TEI、TEP和TBP在差距（001）表面上的分解反应受氢气氛的强烈影响，而在Si（001）表面上不受影响，这是由于氢在GaP（001）表面上发生解离吸附而在Si（001）表面上不发生解离吸附.提出了TEI、TEP和TBP在Si（001）和GaP（001）表面的分解机理。少

InP is a potential material for application to high speed and optical devices. Thin films of InP is usually fabricated by molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), etc. From practical point of view, MOCVD is a useful method for fabrication of the film. Since the film is formed by surface chemical reaction of complex metalorganic compounds on semiconductor substrates, the reaction should be controlled to obtain good quality samples. Therefore, it is necessary to elucidate the reaction mechanism for the fabrication.The first step of the reaction is adsorption and subsequently decomposition and reaction occur on substrate surfaces, forming the films in MOCVD.Therefore, it is very important to study absorption and decomposition of the metalorganic compounds on the surfaces. Interface between the film and the substrates, which is controlled by the first absorption and following decomposition of the compounds, strongly affects electrical properties of devi … More ces.We have studied absorption and decomposition of triethylindium (TEI), trimethylphosphine (MP), triethylphosphine (TEP), and tertiarybutylphosphine (TBP), which have been used as precursors for MOCVD and ALE,on the Si (111)-7x7, Si (001), and GaP (001) surfaces using AES,PXS,UPS,STM,TPD,HREELS, RHEED.We obtain the following results.1. TMP absorbs preferably on centered adatom sites on a Si (111)-7x7 surface.2. TEI and TEP absorb molecularly on the Si (001) and GaP (001) surfaces at RT and are decomposed into ethylene and hydrogen, leaving In and P atoms on the surfaces, respectively.3. TBP is partially dissociated on the Si (001) and GaP (001) surfaces at RT and is decomposed into isobutylene and hydrogen, leaving P atoms on the surfaces.4. TEI,TEP,and TBP are decomposed through beta-hydride elimination.5. Decomposition reaction of TEI,TEP,and TBP on the GaP (001) surface are strongly affected with hydrogen ambience but not on the Si (001) surface, which is due to the fact that dissociative absorption of hydrogen occurs on GaP (001) but does not on Si (001).6. The decomposition mechanisms of TEI,TEP,and TBP on the Si (001) and GaP (001) surfaces were proposed. Less