STUDY OF SURFACE REACTION IN MOCVD AND ALE USING IN AND P COMPOUNDS

用In和P化合物研究MOCVD和ALE中的表面反应

• 批准号: 07640770
• 负责人: FUKUDA Yasuo
• 金额: $ 1.47万
• 依托单位: SHIZUOKA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07640770/
• 关键词: SURFACE REACTION; COMPOUND SEMICONDUCTOR FILMS; MECHANISM OF THIN FILM FORMATION; TEMPERATURE PROGRAMMED DESORPTION; SCANNING TUNNLELING SPECTROSCOPY; ELECTRON SPECTROSCOPY; ALKYLPHOSPHINE; TRIETHYLINDIUM; 半導体表面; 有機金属; TPD; STM; 化合物半導体

InP is a potential material for application to high speed and optical devices. Thin films of InP is usually fabricated by molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), etc. From practical point of view, MOCVD is a useful method for fabrication of the film. Since the film is formed by surface chemical reaction of complex metalorganic compounds on semiconductor substrates, the reaction should be controlled to obtain good quality samples. Therefore, it is necessary to elucidate the reaction mechanism for the fabrication.The first step of the reaction is adsorption and subsequently decomposition and reaction occur on substrate surfaces, forming the films in MOCVD.Therefore, it is very important to study absorption and decomposition of the metalorganic compounds on the surfaces. Interface between the film and the substrates, which is controlled by the first absorption and following decomposition of the compounds, strongly affects electrical properties of devi … More ces.We have studied absorption and decomposition of triethylindium (TEI), trimethylphosphine (MP), triethylphosphine (TEP), and tertiarybutylphosphine (TBP), which have been used as precursors for MOCVD and ALE,on the Si (111)-7x7, Si (001), and GaP (001) surfaces using AES,PXS,UPS,STM,TPD,HREELS, RHEED.We obtain the following results.1. TMP absorbs preferably on centered adatom sites on a Si (111)-7x7 surface.2. TEI and TEP absorb molecularly on the Si (001) and GaP (001) surfaces at RT and are decomposed into ethylene and hydrogen, leaving In and P atoms on the surfaces, respectively.3. TBP is partially dissociated on the Si (001) and GaP (001) surfaces at RT and is decomposed into isobutylene and hydrogen, leaving P atoms on the surfaces.4. TEI,TEP,and TBP are decomposed through beta-hydride elimination.5. Decomposition reaction of TEI,TEP,and TBP on the GaP (001) surface are strongly affected with hydrogen ambience but not on the Si (001) surface, which is due to the fact that dissociative absorption of hydrogen occurs on GaP (001) but does not on Si (001).6. The decomposition mechanisms of TEI,TEP,and TBP on the Si (001) and GaP (001) surfaces were proposed. Less

InP是一种有潜力应用于高速光学器件的材料。InP薄膜的制备通常采用分子束外延（MBE）、金属有机化学气相沉积（MOCVD）等方法。从实际应用的角度来看，MOCVD是一种有效的薄膜制备方法。由于薄膜是由复合金属有机化合物在半导体衬底上的表面化学反应形成的，因此应控制该反应以获得高质量的样品。因此，有必要对反应机理进行研究。反应的第一步是吸附，随后的分解和反应发生在衬底表面，在MOCVD中形成薄膜。因此，研究金属有机化合物在材料表面的吸附和分解是十分重要的。薄膜与衬底之间的界面是由化合物的首次吸收和随后的分解控制的，它强烈地影响器件的电学性能。我们利用AES，PXS，UPS，STM，TPD，HREELS， RHEED研究了三乙基lindium (TEI)，三甲基膦（MP），三乙基膦（TEP）和叔丁基膦（TBP）在Si (111)-7x7, Si（001）和GaP（001）表面上作为MOCVD和ALE前驱体的吸收和分解。我们得到了以下结果：TMP在Si (111)-7x7表面的居中配原子位置上有较好的吸收。TEI和TEP在RT时分子吸附在Si（001）和GaP（001）表面，分解为乙烯和氢，在表面分别留下In和P原子。TBP在RT下在Si（001）和GaP（001）表面部分解离，分解成异丁烯和氢，在表面留下P原子。TEI、TEP和TBP通过-氢化物消除分解。TEI、TEP和TBP在GaP（001）表面的分解反应受到氢气气氛的强烈影响，而在Si（001）表面则不受影响，这是由于氢气的解离吸收发生在GaP（001）上而不发生在Si（001）上。提出了TEI、TEP和TBP在Si（001）和GaP（001）表面的分解机理。少

项目成果

Y.Fukuda et al.: "Highly site-selective adsorption of trimethylphosphine on a Si(111)-(7x7) surface studied by a scanning tunneling microscope" Surface Sci.341. L1061-L1064 (1995)

Y.Fukuda 等人：“通过扫描隧道显微镜研究三甲基膦在 Si(111)-(7x7) 表面上的高度位点选择性吸附”Surface Sci.341。

G. Kaneda,et al.: "Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on Si (011) studied by XPS,HREELS,and TPD," Appl. Surf. Sci.(in press).

G. Kaneda 等人：“通过 XPS、HREELS 和 TPD 研究三乙基膦 (TEP) 和叔丁基膦 (TBP) 在 Si (011) 上的吸附和分解”Appl。

J.Murata,et al.: "Decomposition of triethylindium (TEI) on GaP (001) surface studied by TPD,AES,and RHEED," Appl. Surf. Sci.100/101. 417-420 (1996)

J.Murata 等人：“通过 TPD、AES 和 RHEED 研究 GaP (001) 表面上的三乙基铟 (TEI) 分解”，Appl。

G.Kaneda, et al.: "HREELS study of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on a Si (001)-(2x1) surface" Surf.Sci. (in press).

G.Kaneda 等人：“Si (001)-(2x1) 表面上三乙基膦 (TEP) 和叔丁基膦 (TBP) 的 HREELS 研究”Surf.Sci。

G.Kaneda,et al.: "Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on Si (001) studied by XPS,HREELS,and TPD," Appl.Surf.Sci.(in press.).

G.Kaneda 等人：“通过 XPS、HREELS 和 TPD 研究了三乙基膦 (TEP) 和叔丁基膦 (TBP) 在 Si (001) 上的吸附和分解”Appl.Surf.Sci.（出版中）。