Development of a compact low energy reactive gas ion gun for ultra high resolution depth profiling

开发用于超高分辨率深度分析的紧凑型低能反应气体离子枪

• 批准号: 15560023
• 负责人: INOUE Masahiko
• 金额: $ 2.37万
• 依托单位: Setsunan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560023/
• 关键词: low energy ion gun; Auger electron Spectroscopy; depth profiling; depth resolution; GaAs; AlAs; 低速イオンビーム; 酸素イオンビーム

In the present study, AES depth profiling of GaAs/AlAs super lattice sample using the developed compact FLIG was performed with the ion energy ranging from 100 to 500eV. The practical etching rate of more than 1.5nm/min was attained in the energy region over 150eV. The high depth resolutions of 1.3,1.6,1.8 and 2.0nm (84-16%) were obtained with the sputtering energies of 100,150,200 and 300eV at the leading edge of Al-LVV depth profiles, respectively.At the energy of 100eV, the best fit of the MRI calculation required different surface roughness of 0.4 and 1.2nm at the leading and trailing edges, leading to the remarkable improvement of the depth resolution at the leading edge (Δz_1=1.3nm) but followed by considerable deterioration at the trailing edge (Δz_1=2.7nm). Although this tendency is quite similar to the case of the ABS depth profiling with O_2^+ ion sputtering, probably due to the low sputtering yield of Al-oxides formed in AlAs layers by O_2^+ ion bombardment, any trace of oxygen adsorption onto a specimen surface could not be observed during the measurement. To investigate the origin of this phenomenon, we performed dynamic Monte-Carlo simulation.

利用研制的紧凑型FLIG对GaAs/AlAs超晶格样品进行了AES深度剖析，离子能量范围为100 ~ 500 eV。在150 eV以上的能量范围内，实际刻蚀速率大于1.5nm/min。当溅射能量为100、150、200和300 eV时，在Al-LVV深度剖面的前沿分别获得了1.3、1.6、1.8和2.0nm（84-16%）的高深度分辨率，当溅射能量为100 eV时，MRI计算的最佳拟合要求在前沿和后沿的表面粗糙度分别为0.4和1.2nm，导致前缘深度分辨率显著提高（Δz_1=1.3nm），但后缘深度分辨率显著下降（Δz_1=2.7nm）。虽然这一趋势与O_2^+离子溅射的ABS深度剖面的情况非常相似，但可能是由于O_2^+离子轰击AlAs层形成的Al氧化物的溅射产率较低，在测量过程中没有观察到任何氧吸附到样品表面上的痕迹。为了研究这种现象的根源，我们进行了动态蒙特-卡罗模拟。

项目成果

Focusing and Positioning of Ion Beam for Sputter Depth Profiling using a Coaxicial Sample Stage and a Dual Nano-ammter

使用同轴样品台和双纳米电流计进行溅射深度分析的离子束聚焦和定位

• 发表时间: 2003
• 期刊: J.Surf.Anal. Vol.10
• 作者: M.Inoue;K.Kurahashi;K.Kodama
• 通讯作者: K.Kodama

A Novel Ultrahigh Vacuam Floating-type Low-Energy Ion Gun for High Resolution Depth Profiling

一种用于高分辨率深度分析的新型超高真空浮动式低能离子枪

• 发表时间: 2003
• 期刊: Surf.&Interf.Anal. 35
• 作者: Y.Mizuhara;J.Kato;T.Nagatomi;Y.Takai;T.Aoyama;A.Yoshimoto;M.Inoue;R.Shimizu
• 通讯作者: R.Shimizu

井上雅彦, 倉橋和之, 児玉圭司: "同軸試料台と2連微小電流計を用いたスパッタ深さ方向分析用イオンビームの収束及び位置合わせ"Journal of Surface Analysis. Vol.10,No.3. 197-200 (2003)

Masahiko Inoue、Kazuyuki Kurahashi、Keiji Kodama：“使用同轴样品台和双微电流计进行溅射深度分析的离子束聚焦和对准”《表面分析杂志》第 10 卷，第 197-200 期（2003 年）。

High-Resolution Anger Depth Profiling by sub-keV Ion Sputlering

通过亚 keV 离子溅射进行高分辨率愤怒深度分析

• 发表时间: 2005
• 期刊: Surf.& Interf.Anal. 37
• 作者: M.Inoue;R.Shimizu;H.I.Lee;H.J.Kong
• 通讯作者: H.J.Kong

R.Shimizu, M.Inoue: "Application of a Low Energy Ion Gun for High Resolution Depth Profiling"Journal of Surface Analysis. Vol.10,No.2. 154-157 (2003)

R.Shimizu、M.Inoue：“低能量离子枪在高分辨率深度分析中的应用”表面分析杂志。