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Product and Thermoelectric Properties of Thermoelectric Materials with Mesoscopic Structure

介观结构热电材料的产物及热电性能

基本信息

批准号：
15560050
负责人：
IWASAKI Hideo
金额：
$ 2.05万
依托单位：
Japan Advanced Institute of Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

We can have two important results in this research. The first is the observation of non-equilibrium stationary state between the electron and lattice systems in thermoelectric materials. Typical thermoelectric phenomenon, The Peltier effect is incarnated by only the electron system and the lattice system is warmed up through the thermal interaction between both systems. The electrons are coercively carried by the applied electric field. Furthermore, the Peltier heat is continuously reproduced during the impression of dc current. Therefore, non-equilibrium stationary state could appear between the electron and lattice systems. We tried to measure the electron and lattice temperatures, using the developed equipment in this grant and could confirm that the non-equilibrium phenomenon between the electron and lattice systems was surely caused by the Peltier effect. The second is improvement of the figure of merit in the Bi micro-wire array. The figure of merit is strongly enhanced to be ZT=0.287 in the micro-wire array. The obtained value is approximately 2.8 times larger than that (ZT=0.1) in the Bi bulk device. Furthermore, we could explain that the origin came from the control of the crystal axis in the array, examining the measured values of the other thermoelectric physical quantities. In this grant we developed the evaluation equipment by the Harman method and some important results such as the non-equilibrium stationary state between the electron and lattice systems and the improvement of the figure of merit in the Bi micro-wire array.

在这项研究中，我们可以得到两个重要的结果。第一个是热电材料中电子与晶格系统之间的非平衡定态的观察。典型的热电现象是电子系统体现Peltier效应，晶格系统通过两个系统之间的热相互作用升温。电子被外加的电场吸引.此外，帕尔贴热在直流电流的印象期间被连续地再现。因此，在电子和晶格系统之间可能出现非平衡定态。我们尝试使用本资助项目开发的设备测量电子和晶格温度，可以确认电子和晶格系统之间的非平衡现象确实是由Peltier效应引起的。二是改善了Bi微线阵列的品质因数。在微线阵列中，品质因数被强烈地提高到ZT=0.287。所获得的值比Bi体器件中的值（ZT=0.1）大约2.8倍。此外，我们可以解释的起源来自控制的晶轴在阵列中，检查其他热电物理量的测量值。在本研究中，我们开发了Harman方法的评估设备，并获得了一些重要的结果，如电子和晶格系统之间的非平衡定态以及Bi微线阵列中优值的改善。