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Development for the Synthesis of Very Hard Thin Films by Electron Beam Excited Plasma

电子束激发等离子体合成极硬薄膜的进展

基本信息

批准号：
15560106
负责人：
PETROS Abraha
金额：
$ 2.05万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560106/
关键词：
Electron beam Plasma Boron target Acceleration voltage Substrate bias Sputtering very hard coating BN thin films c-BN膜

项目摘要

The primary plasma sources for the production of atomic nitrogen has been the conventional plasma sources, including electron cyclotron resonance (ECR) plasma, radio frequency (RF) plasma, do glow discharge, cold cathode gun. These plasma sources however use small volume and need a high pressure and discharge voltage to produce sufficient flux of atomic nitrogen for plasma processing. The maximum cross section for nitrogen dissociation is about 60-130 eV. These means that a high dissociation rate of nitrogen can be achieved if the electron energy were around the maximum cross section In this experiment the electron-beam-excited plasma (EBEP) deposition system used was designed to produce electron beam energy of 50-150 eV. At first, the plasma parameters discharge current I_b, acceleration voltage V_a, rf bias voltage V_<dc> and N_2/Ar ratio were determined in view of the deposit thickness and crystal structure to be I_b=3.4A, V_a=120V V_<dc>=600V and N_2/Ar=8/10 sccm. The target substrate distance was then varied and the synthesized films were evaluated The deposition rate of the sputtering system was estimated to be about 10nm/min. This deposition rate is comparable to other sputtering systems reported in literature. In evaluating the synthesized films, the AES results show the synthesized film was formed out of boron and nitrogen atoms with a 1:1 ratio. The bonding state analysis of the FTIR show peaks at 780cm^<-1> and 1370cm^<-1> indicating formation of h-BN thin film. For target substrate distance of 50mm, the hardness and war volume were measured to be 10.3 GPa and 0.013mm^3, respectively. The friction coefficient and surface roughness were both independent of the target substrate distance with values of 4.5nm and 0.085, respectively.

用于制备原子氮的主要等离子体源一直是常规等离子体源，包括电子回旋共振（ECR）等离子体、射频（RF）等离子体、辉光放电、冷阴极枪。然而，这些等离子体源使用小体积，并且需要高压力和放电电压来产生用于等离子体处理的足够的原子氮通量。氮解离的最大截面约为60-130 eV。这意味着如果电子能量在最大横截面附近，则可以实现氮的高解离速率。在该实验中，所使用的电子束激发等离子体（EBEP）沉积系统被设计为产生50-150 eV的电子束能量。首先，根据存款厚度和晶体结构确定了等离子体参数：放电电流I_B=3.4A，加速电压V_a= 120 V，射频偏压<dc>V_a = <dc>600 V，N_2/Ar=8/10 sccm。然后改变靶基距，并对合成的薄膜进行评价。溅射系统的沉积速率估计为约10 nm/min。该沉积速率与文献中报道的其他溅射系统相当。在评价合成的膜时，AES结果显示合成的膜由硼和氮原子以1：1的比例形成。FTIR的键合状态分析显示在780 cm-2<-1>和1370 cm-2处的峰，<-1>表明h-BN薄膜的形成。当靶基距离为50 mm时，测得的硬度和体积分别为10.3 GPa和0.013 mm^3。摩擦系数和表面粗糙度均与靶基距离无关，其值分别为4.5nm和0.085。