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Formation of luminescent centers in GaN powders by the two-stage vapor phase synthesis and their phosphor application

两步气相合成GaN粉末发光中心及其荧光粉应用

基本信息

批准号：
15560270
负责人：
HARA Kazuhiko
金额：
$ 2.37万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560270/
关键词：
Gallium nitride Powder Vapor phase synthesis Phosphor Photoluminescence Luminescent center Impurity doping

项目摘要

1.The characterization of undoped GaN powders on the constituent of gases, GaCl,NH_3 and H_2, and their partial pressures at the stage of particle growth was carried out systematically. Based on these results, the dramatic improvement in the luminescent property of the samples has been achieved.2.The synthesis of GaN:Zn powders by the two-stage vapor phase method, in which a ZnS powder was used as a source for the stage of particle growth. The supply rate of ZnS was controlled by choice of carrier gas (N_2 or HCl) and their flow rate, which enabled the extensive control of Zn concentration between 1×10^<19>〜8×10^<20> cm^<-3>. It was found that S of almost the same concentration as Zn was also incorporated in the samples.3.The synthesized GaN:Zn powder showed blue photomminescence and cathodeluminescence. The spectra consisted of a broad emission band located around 450 nm. The emission was characterized systematically on the Zn concentration.4.It was found that the luminescence from the GaN:Zn powder is dependent strongly on the partial pressure of NH_3 at the stage of particle growth. The emission intensity increased with increasing the partial pressure in the region up to 0.78 atm.5.The dramatic improvement in the luminescence and crystalline properties has been achieved by using Zn metal as a source instead of ZnS, which suggests that the incorporation of S has a negative effect on the quality of samples.

1.系统地研究了未掺杂GaN粉体在颗粒生长阶段的气体组成（GaCl、NH_3和H_2）及其分压。在此基础上，对样品的发光性能进行了研究。2.采用两步气相法合成GaN：Zn粉体，其中ZnS粉体作为颗粒生长阶段的源。通过选择载气（N_2或HCl）及其流量来控制ZnS的供给速率，这使得Zn的浓度在1×10 ~（-8）×10 ~（-8）cm ~（-1）范围内可广泛控制<19><20><-3>。结果表明，样品中还掺入了与Zn浓度相近的S。3.合成的GaN：Zn粉末具有蓝色发光和阴极发光。光谱由位于450 nm附近的宽发射带组成。4.发现GaN：Zn粉末的发光强烈地依赖于颗粒生长阶段NH_3的分压。在0.78atm.5范围内，随着分压的增加，发光强度增加。用金属Zn代替ZnS作为发光源，发光性能和结晶性能得到了显著的改善，这表明S的掺入对样品的质量有负面影响。