Fabrication of hexagonal boron nitride single-crystal macro-terrace and –wall arrays with atomically flat surfaces

本研究旨在发展选择性生长高质量六方BN （h-BN）晶体的技术。采用化学气相沉积法在c平面蓝宝石衬底上生长了h-BN薄膜。研究发现，该材料的结构性能和发光性能之间存在很强的相关性。低压生长首次成功地获得了具有独特面内取向的厚膜。在减压下，横向生长也得到了增强。在分离膜上的高温再生长也被证明是一种很有前途的技术，可以产生具有更高结构性能的大面积晶体。

This study has been carried out in order to develop the technique that grows the standalone high-quality hexagonal BN (h-BN) crystals by selective growth. The h-BN films were grown on c-plane sapphire substrates by chemical vapor deposition. It has been found that the structural and luminescent properties are strongly correlated with each other. The low pressure growth successfully yielded the thick films with a unique in-plane orientation for the first time. The lateral growth was also enhanced under the reduced pressure. The re-growth at high temperatures on the separated films was also proven to be a promising technique to yield the large-area crystals with higher structural properties.