The establishment of the way of processing nano size high precision on the surface of polymer thin films by the low temperature plasma

低温等离子体表面处理，如等离子体蚀刻和等离子体聚合，在物理和化学上对聚合物表面的改善是非常有效的。然而，低温等离子体精加工的技术尚不清楚，也没有建立精确设计聚合物表面的过程控制。在本研究中，为了研究聚合物薄膜的表面形貌与功能之间的关系，采用冷等离子体刻蚀和冷等离子体聚合两种方法控制聚合物薄膜的表面形貌设计过程。采用钟罩式反应器和腔室式反应器进行冷等离子体处理。用1%或3wt%的PVA水溶液在玻璃基板上制备了PVA薄膜。在488 K下退火1 h后，PVA薄膜的表面形貌与退火前相比，各区域均平整光滑。等离子体辐照条件为50 W， 0.1 Torr。在383 K和488 K下退火后，等离子体辐照时间分别为30、60、90、120、180 s。利用原子力显微镜（AFM）观察了PVA薄膜的表面形貌。氩等离子体在50 W和0.1 Torr下辐照60 s后，薄膜表面形貌为50 nm量级的不均匀。在50 W和0.1 Torr下等离子体辐照600 s后，由于等离子体刻蚀时间长，薄膜表面各区域又变得平坦光滑。在383 K退火的低晶PVA薄膜中，粗糙度参数（中心线平均粗糙度）Ra的大小随着等离子体辐照时间的延长而减小。另一方面，在488k退火的高结晶PVA薄膜中，Ra的大小随着等离子体辐照时间的延长而增加，辐照时间达到60s后Ra的大小减小。研究发现，氩等离子体处理薄膜的表面形貌受到薄膜热预处理的强烈影响。另一方面，利用原子力显微镜（AFM）和x射线光电子能谱（XPS）分析了乙烯酰咪唑接枝聚吡啶薄膜的表面形貌。证实了等离子体接枝聚合在PI薄膜上形成了聚咪唑。少

The surface finishing by the low temperature plasma, such as plasma etching and plasma polymerization is very effective in polymer surface improvement physically and chemically. However, the technology where as for low temperature plasma finishing is still unclear and process control to design the polymer surface precisely is not established. Then in this research, in order to investigate the relationship between the surface morphologies and the functions of polymer thin films, the process to design the fine surface morphologies of polymer thin films was controlled by both the cold plasma etching and the cold plasma polymerization. Both the bell jar-type reactor and the chamber-type reactor were used for the cold plasma treatment. PVA thin films spin-coated from 1 or 3wt% PVA aqueous solution on the glass substrates was prepared. The surface morphology of the PVA thin film after annealing at 488 K for 1 h was flat and smooth in all regions compared to that before annealing. Plasma irra … More diation condition was at 50 W and 0.1 Torr. Plasma irradiation times were 30, 60, 90, 120, 180 s after annealing at 383 K and 488 K, respectively. The surface morphologies of the PVA thin films were observed by using atomic force microscopy (AFM). The surface morphology of the thin film after Ar plasma irradiation at 50 W and 0.1 Torr for 60 s was unevenness of the order of 50 nm. The surface morphology of the thin film after Ar plasma irradiation at 50 W and 0.1 Torr for 600 s was flat and smooth in all regions again because of the long period of the plasma etching. In the case of low-crystalline PVA thin films annealed at 383 K, the magnitude of the roughness parameter (the center line average roughness), Ra decreased with the elapse of plasma irradiation time. On the other hand, in the case of the high-crystalline PVA thin films annealed at 488 K, the magnitude of the Ra increased with the elapse of plasma irradiation time up to 60 s, then it decreased. It has been found that the surface morphologies of the thin films obtained by Ar plasma treatment were strongly influenced by the thermal pretreatment of the films. On the other hand, the surface morphologies of the PI thin films graft-polymerized with vinylimidazole were observed by using AFM and X-ray photoelectron spectroscopy (XPS) analysis. It confirmed that polyimidazole which grafted by plasma graft polymerization on the PI thin films formed. Less