The establishment of the way of processing nano size high precision on the surface of polymer thin films by the low temperature plasma

低温等离子体表面处理技术，如等离子体刻蚀、等离子体聚合等，对聚合物表面进行物理和化学改性是非常有效的。然而，对于低温等离子体抛光的技术仍然不清楚，并且没有建立精确设计聚合物表面的过程控制。本研究采用冷等离子体刻蚀和冷等离子体聚合相结合的方法，对聚合物薄膜的表面形貌进行了优化设计，以探讨聚合物薄膜表面形貌与功能之间的关系。钟罩式反应器和室式反应器都用于冷等离子体处理。以1和3wt%的PVA水溶液为原料，采用旋涂法在玻璃基板上制备了PVA薄膜。在488 K下退火1 h后的PVA薄膜的表面形貌与退火前相比在所有区域中是平坦和光滑的。血浆irra ...更多信息 辐射条件为50 W和0.1 Torr。在383 K和488 K下退火后，等离子体辐照时间分别为30，60，90，120，180 s。用原子力显微镜（AFM）观察了PVA薄膜的表面形貌。在50 W和0.1 Torr下Ar等离子体照射60 s后，薄膜的表面形貌为50 nm量级的不均匀性。在50 W和0.1 Torr下照射600 s的Ar等离子体之后，由于等离子体蚀刻的长时间，薄膜的表面形态在所有区域中再次是平坦和光滑的。在低结晶PVA薄膜在383 K退火的情况下，粗糙度参数（中心线平均粗糙度）的大小，Ra随着等离子体照射时间的推移而下降。另一方面，在488 K下退火的高结晶PVA薄膜的情况下，Ra的大小随着等离子体照射时间的流逝而增加，直到60 s，然后降低。结果表明，Ar等离子体处理后的薄膜表面形貌受热处理的影响较大。另一方面，用原子力显微镜（AFM）和X射线光电子能谱（XPS）分析观察了乙烯基咪唑接枝聚合的PI薄膜的表面形貌。结果表明，通过等离子体接枝聚合的方法，在聚酰亚胺薄膜上接枝了聚咪唑。少

The surface finishing by the low temperature plasma, such as plasma etching and plasma polymerization is very effective in polymer surface improvement physically and chemically. However, the technology where as for low temperature plasma finishing is still unclear and process control to design the polymer surface precisely is not established. Then in this research, in order to investigate the relationship between the surface morphologies and the functions of polymer thin films, the process to design the fine surface morphologies of polymer thin films was controlled by both the cold plasma etching and the cold plasma polymerization. Both the bell jar-type reactor and the chamber-type reactor were used for the cold plasma treatment. PVA thin films spin-coated from 1 or 3wt% PVA aqueous solution on the glass substrates was prepared. The surface morphology of the PVA thin film after annealing at 488 K for 1 h was flat and smooth in all regions compared to that before annealing. Plasma irra … More diation condition was at 50 W and 0.1 Torr. Plasma irradiation times were 30, 60, 90, 120, 180 s after annealing at 383 K and 488 K, respectively. The surface morphologies of the PVA thin films were observed by using atomic force microscopy (AFM). The surface morphology of the thin film after Ar plasma irradiation at 50 W and 0.1 Torr for 60 s was unevenness of the order of 50 nm. The surface morphology of the thin film after Ar plasma irradiation at 50 W and 0.1 Torr for 600 s was flat and smooth in all regions again because of the long period of the plasma etching. In the case of low-crystalline PVA thin films annealed at 383 K, the magnitude of the roughness parameter (the center line average roughness), Ra decreased with the elapse of plasma irradiation time. On the other hand, in the case of the high-crystalline PVA thin films annealed at 488 K, the magnitude of the Ra increased with the elapse of plasma irradiation time up to 60 s, then it decreased. It has been found that the surface morphologies of the thin films obtained by Ar plasma treatment were strongly influenced by the thermal pretreatment of the films. On the other hand, the surface morphologies of the PI thin films graft-polymerized with vinylimidazole were observed by using AFM and X-ray photoelectron spectroscopy (XPS) analysis. It confirmed that polyimidazole which grafted by plasma graft polymerization on the PI thin films formed. Less