Magnetism tuning in non-centrosymmetric chiral semiconductor CeRhC2
非中心对称手性半导体 CeRhC2 的磁调谐
基本信息
- 批准号:467257848
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Research Grants
- 财政年份:
- 资助国家:德国
- 起止时间:
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
The project focuses on syntheses, characterizations and physical properties investigations of semiconducting CeRhC2 carbide and its substituted variants. To tune magnetism in this compound the Ce-Ce interactions will be influenced by using chemical pressure (can be achieved by partial substitution of Rh by smaller Co or by larger Ir or by replacement of Ce by larger La), hole doping (substitution of Rh by Ru) and electron doping (replacement of Rh by Pd). All these will result in either enhancement/reduction of the transition temperature of antiferromagnetic ordering or in switch to ferromagnetism or will cause the valence instability of Ce (i.e. mixed or intermediate valence state) in the targeted carbide. Additionally, hole/electron doping has to influence the electronic and thermal transport properties enhancing/reducing the metallicity of the studied system. Special attention will be paid to the chirality of CeRhC2 and its substituted variants as well as to the analysis of the chemical bonding situation. All the experimental studies will be supported by quantum chemical calculations and simulations as well. Thus combining all these approaches we will be able to analyze the relationships between chemical compositions, crystallographic parameters, transport- and magnetic properties in the mentioned carbides. Such an analysis is expected to broaden our knowledge about magnetism in semiconducting intermetallics. This study is also of special interest in the view of the recently obtained results in spintronic and skyrmion physics.
该项目的重点是半导体CeRhC 2碳化物及其替代变体的合成,表征和物理性能研究。为了调节该化合物中的磁性,Ce-Ce相互作用将通过使用化学压力(可以通过用较小的Co或较大的Ir部分取代Rh或通过用较大的La取代Ce来实现)、空穴掺杂(用Ru取代Rh)和电子掺杂(用Pd取代Rh)来影响。所有这些都会导致反铁磁有序转变温度的提高/降低或向铁磁性的转变,或者会导致目标碳化物中Ce(即混合或中间价态)的价态不稳定。此外,空穴/电子掺杂影响电子和热输运性质,增强/降低所研究系统的金属性。特别注意将支付给CeRhC 2和其取代的变体的手性,以及化学键合情况的分析。所有的实验研究都将得到量子化学计算和模拟的支持。因此,结合所有这些方法,我们将能够分析所提到的碳化物的化学成分,晶体学参数,传输和磁性之间的关系。这样的分析有望拓宽我们对半导体金属间化合物磁性的认识。鉴于最近在自旋电子学和skyrmion物理学中获得的结果,这项研究也特别有趣。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Professor Juri Grin其他文献
Professor Juri Grin的其他文献
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{{ truncateString('Professor Juri Grin', 18)}}的其他基金
Preparation of intermetallic phases in ionic liquids
离子液体中金属间相的制备
- 批准号:
253286982 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Priority Programmes
New Topological Insulators based on ternary chalcogenides of Bi, Pb and TI
基于 Bi、Pb 和 TI 三元硫属化物的新型拓扑绝缘体
- 批准号:
237558034 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Priority Programmes
Thermoelectric properties of antimonide intermetallics and oxides: Nanoparticles and nano-sized segregations in bulk samples
锑化物金属间化合物和氧化物的热电性能:散装样品中的纳米颗粒和纳米尺寸偏析
- 批准号:
120585442 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Chemical bonding in complex metallic alloys
复杂金属合金中的化学键合
- 批准号:
137031496 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Research Grants
Electron density and chemical bonding in intermetallic borides and structural analogues
金属间硼化物和结构类似物中的电子密度和化学键合
- 批准号:
47469146 - 财政年份:2007
- 资助金额:
-- - 项目类别:
Priority Programmes
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