Proximity doping effects in epitaxial graphene: substrate, growth and post-growth treatment

外延石墨烯中的邻近掺杂效应：基底、生长和生长后处理

• 批准号: 470745895
• 负责人: Dr. Klaus Pierz
• 金额: --
• 依托单位: Fachbereich 2.5 - Halbleiterphysik und Magnetismus
• 依托单位国家: 德国
• 项目类别: Research Units
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/470745895?language=en
• 关键词: Proximity; doping; effects; epitaxial; graphene

The position of the Fermi level and thus the carrier density of epitaxial graphene is a key property for various device applications. Achieving a well-defined and highly homogeneous carrier density is crucial for applications in electrical quantum metrology, specifically for the realization of quantum Hall standards in low magnetic field. On the other hand, a controlled variation of the carrier density will allow realization of p-n-junctions enabling novel device applications and the access to fundamental effects such as Klein tunneling. Therefore, this project aims at realizing large area epitaxial graphene systems with the highest possible control of the carrier density. Growing large area graphene with low step heights on specific SiC facets, only, will allow to obtain a highly homogeneous carrier density allowing full quantization in lowest possible fields. In contrast, growth on alternating facets will be explored to realize lateral doping modulation and lateral p-n-junctions. The facet induced doping will be combined with polymer-based post-growth molecular doping to realize various devices with optimized properties for both electrical quantum metrology and fundamental experiments.

费米能级的位置以及因此外延石墨烯的载流子密度是各种器件应用的关键特性。实现良好定义和高度均匀的载流子密度对于电量子计量学中的应用，特别是对于在低磁场中实现量子霍尔标准是至关重要的。另一方面，载流子密度的受控变化将允许实现p-n结，从而实现新颖的器件应用和获得诸如克莱因隧穿的基本效应。因此，该项目旨在实现大面积外延石墨烯系统，尽可能控制载流子密度。仅在特定的SiC刻面上生长具有低台阶高度的大面积石墨烯将允许获得高度均匀的载流子密度，从而允许在最低可能的场中进行完全量子化。相反，将探索在交替刻面上的生长以实现横向掺杂调制和横向p-n结。小面诱导掺杂将与基于聚合物的生长后分子掺杂相结合，以实现具有优化性能的各种器件，用于电量子计量学和基础实验。