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Study on the Epitaxial Growth of Oxide Films in Sputtering focusing on Negative Oxygen Ion Behavior

关注负氧离子行为的溅射氧化膜外延生长研究

基本信息

批准号：
16540454
负责人：
OKIMURA Kunio
金额：
$ 2.24万
依托单位：
Tokai University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

In this project, we performed depositions of titanium dioxide films on single crystalline MgO substrates by using inductively coupled plasma (ICP)-assited sputtering. In addition, we fabricated a new sputtering device which can realize in-situ sequential depositions utilizing movable multi targets.Through depositions of titanium dioxide (TiO_2) films on MgO substrates, we showed oriented growth of rutile-type crystalline films having in-plane two orientations. It is interpreted that higher density plasma production and lowered target self bias voltage in ICP-assisted sputtering brig about epitaxial growth of high-temperature stable phase of rutile Ti0_2. Based on the Langmuir probe studies which were done by the cooperation with co-researcher, Professor Haruo Shindo, kinetic effects of negative oxygen ions are supposed to be very important issue due to their effects different from positive ions. This issue of the roles of negative oxygen ions and active oxygen atoms is to be continued … More in next study. In addition to the TiO_2 growth on MgO substrates, we performed deposition of Nb-doped TiO_2 films on SrTiO_3 single substrates. As the results, transparent TiO_2 films with lower resistivity on the order of 10^<-4> Ωcm were achieved.Further, we deposited vanadium dioxide (VO_2) films by using ICP-assisted sputtering technique. As a promising result, we obtained stoichiometric VO_2, films which show metal-insulator transition at relatively low temperature around 65℃. Such film with transition characteristic can be applied to newly concept switching and memory devices.Newly fabricated sputtering device with in-situ changeable two targets enabled sequential sputter deposition of different kinds of material. As a representative, we performed depositions of ferromagnetic Co film on pre-deposited Al film. As the result, crystalline hcp-Co film was deposited on Al under-layer without the magnetron effect, revealing the potential ability to realize superior multi-layered film growth by the introduction of in-situ sequential deposition. Less

在本计画中，我们利用电感耦合电浆辅助溅镀法在单晶氧化镁基板上沉积二氧化钛薄膜。此外，我们还研制了一种可移动多靶原位连续沉积的溅射装置，通过在MgO衬底上沉积二氧化钛（TiO_2）薄膜，发现了具有面内两个取向的金红石型晶体薄膜的取向生长。分析了ICP辅助溅射布里格中产生的高密度等离子体和降低的靶自偏压对金红石型TiO_2高温稳定相外延生长的影响。根据与共同研究员Haruo Shindo教授合作完成的Langmuir探针研究，负氧离子的动力学效应应该是非常重要的问题，因为它们的作用不同于正离子。关于负氧离子和活性氧原子的作用，本期待续 ...更多信息在下一个研究中。除了在MgO衬底上生长TiO_2薄膜外，我们还在SrTiO_3单晶衬底上制备了Nb掺杂的TiO_2薄膜。在此基础上，<-4>我们利用等离子体辅助溅射技术制备了二氧化钒（VO_2）薄膜。作为一个有希望的结果，我们获得了化学计量比的VO_2薄膜，在相对较低的温度（约65℃）下表现出金属-绝缘体转变。这种具有过渡特性的薄膜可以应用于新概念的开关和存储器件。新研制的原位可变双靶溅射装置实现了不同材料的连续溅射沉积。作为一个代表，我们进行了铁磁Co膜上的预沉积的Al膜的沉积。结果表明，在没有磁控效应的情况下，在Al衬底上沉积了结晶的hcp-Co薄膜，揭示了通过引入原位顺序沉积实现上级多层膜生长的潜在能力。少

项目成果

期刊论文数量（42）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Growth of VO_2 Films with Metal-Insulator Transition on Silicon Substrates by Inductively Coupled Plasma-Assisted Sputtering

硅衬底上电感耦合等离子体辅助溅射生长具有金属-绝缘体转变的VO_2薄膜

DOI：
发表时间：
2005
期刊：
Proceedings of 27^<th> International Symposium on Dry Process
影响因子：
0
作者：
J.Takayama;K.Okimura;Kunio Okimura;Kunio Okimura;Kunio Okimura;Ken Okumura;Kunio Okimura
通讯作者：
Kunio Okimura

Selective Growth of Rutile and Anatase TiO_2 Films on MgO substrate Using TiN Buffer Layer in Reactive Sputtering

反应溅射中TiN缓冲层在MgO基底上选择性生长金红石和锐钛矿TiO_2薄膜

DOI：
发表时间：
2006
期刊：
Proceedings of the 6^th International Conference on Reactive Plasmas and 23^rd Symposium on Plasma Processing
影响因子：
0
作者：
S.Koike;T.Sakamoto;H.Kobori;H.Matsuura;H.Akatsuka;H.Akatsuka;Jun Takayama
通讯作者：
Jun Takayama

Growth of VO_2 Films with Metal Insulator Transition on Silicon Substrates by Inductively Coupled Plasma Assisted Sputtering

硅衬底上感应耦合等离子体辅助溅射生长金属绝缘体转变的VO_2薄膜

DOI：
发表时间：
2005
期刊：
Proceedings of 27th International Symposium on Dry Process
影响因子：
0
作者：
K.Okimura;N.Kubo
通讯作者：
N.Kubo

Performance of Inductively Coupled Plasma Source with an External Coil for Sputtering of Titanium Oxide

带有外部线圈的感应耦合等离子体源用于氧化钛溅射的性能

DOI：
发表时间：
2005
期刊：
Proceedings of Plasma Science Symposium 2005/The 22^th Symposium on Plasma Processing
影响因子：
0
作者：
J.Takayama;K.Okimura;Kunio Okimura;Kunio Okimura;Kunio Okimura;Ken Okumura
通讯作者：
Ken Okumura

Epitaxial Growth of Rutile TiO_2 Films on MgO Substrate in Inductively Coupled Plasma-Assisted Sputtering

电感耦合等离子体辅助溅射在MgO基体上外延生长金红石型TiO_2薄膜