Study on crystalline growth of phase transition oxides with various oxidation states and their electric transport characteristics

在本项目中，我们研究了具有绝缘体-金属过渡（IMT）的二氧化钒（VO2）和具有不同氧化态（VnO2n-1和VnO2n+1）的氧化相。利用质量流量控制器对氧分压进行精细控制，成功地在蓝宝石和硅衬底上制备了V2O3晶体薄膜。在适当温度和时间的氧气气氛中后退火，得到的V2O3薄膜转变为VnO2n-1和VnO2n+1相。通过研究，部分阐明了VnO2n-1和VnO2n+1的电输运特性，说明了氧化钒薄膜中相共存的意义。

In this project, we studied vanadium dioxide (VO2) with insulator-metal transition (IMT) and related oxide phases which possess different oxidation states such as VnO2n-1 and VnO2n+1. By using mass flow controller which enabled fine control of oxygen partial pressure, we successfully fabricated crystalline V2O3 films on sapphire and silicon substrates. Obtained V2O3 films transformed to VnO2n-1 and VnO2n+1 phases by post-annealing in oxygen atmosphere with adequate temperature and time. Through the study, electrical transport characteristics of VnO2n-1 and VnO2n+1 were partially clarified and the significance of phase coexistence in vanadium oxide thin films was shown.