Study on crystalline growth of phase transition oxides with various oxidation states and their electric transport characteristics

不同氧化态相变氧化物的晶体生长及其电输运特性研究

• 批准号: 23560013
• 负责人: OKIMURA Kunio
• 金额: $ 3.41万
• 依托单位: Tokai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560013/
• 关键词: 相転移酸化物; バナジウム酸化物; 絶縁体金属転移; マグネリ相; 結晶成長; 薄膜堆積; 相共存; アニール効果; 酸化バナジウム薄膜; 相転移; 電気的特性; 結晶変態; 国際情報交流; フランス; アメリカ

In this project, we studied vanadium dioxide (VO2) with insulator-metal transition (IMT) and related oxide phases which possess different oxidation states such as VnO2n-1 and VnO2n+1. By using mass flow controller which enabled fine control of oxygen partial pressure, we successfully fabricated crystalline V2O3 films on sapphire and silicon substrates. Obtained V2O3 films transformed to VnO2n-1 and VnO2n+1 phases by post-annealing in oxygen atmosphere with adequate temperature and time. Through the study, electrical transport characteristics of VnO2n-1 and VnO2n+1 were partially clarified and the significance of phase coexistence in vanadium oxide thin films was shown.

在本项目中，我们研究了具有绝缘体-金属过渡（IMT）的二氧化钒（VO2）和具有不同氧化态（VnO2n-1和VnO2n+1）的氧化相。利用质量流量控制器对氧分压进行精细控制，成功地在蓝宝石和硅衬底上制备了V2O3晶体薄膜。在适当温度和时间的氧气气氛中后退火，得到的V2O3薄膜转变为VnO2n-1和VnO2n+1相。通过研究，部分阐明了VnO2n-1和VnO2n+1的电输运特性，说明了氧化钒薄膜中相共存的意义。

项目成果

Electrical Properties of VO_2 Thin Films and Post-annealing Effects on the Growth of Non-stoichiometric VOx

VO_2薄膜的电性能及后退火对非化学计量VOx生长的影响

• 发表时间: 2013
• 作者: Hiromichi Hoshina;Shinya Ishii;Yusuke Morisawa;Harumi Sato;Isao Noda;Yukihiro Ozaki;Chiko Otani;TAKUMA TAKIMOTO,KOJI TAKESHITA,SEIJI NAKAMURA AND TSUGUNORI OKUMURA;Nurul Hanis Azhan and Kunio Okimura
• 通讯作者: Nurul Hanis Azhan and Kunio Okimura

TiNバッファー層によるVO_2薄膜の結晶成長及び転移特性の改善

TiN缓冲层改善VO_2薄膜晶体生长和转变性能

• 发表时间: 2014
• 作者: K. Miura;Y. Iguchi and Y. Kawamura;モハメッドシュルズミヤ,沖村邦雄
• 通讯作者: モハメッドシュルズミヤ,沖村邦雄

Vanadium Dioxide Film Growth onn Titanium Metal Layer on Si (100) by Inductively Coupled Plasma Assisted Sputtering Method

电感耦合等离子体辅助溅射法在 Si (100) 上钛金属层上生长二氧化钒薄膜

• 发表时间: 2012
• 作者: D.Sekiba;H.Yonemura;S.Ogura;M. Matsumoto;Y.Kitaoka;Y.Yokoyama;H.Matsuzaki;T.Narusawa;K. Fukutani;Md. Suruz Mian and Kunio Okimura
• 通讯作者: Md. Suruz Mian and Kunio Okimura

Growth of phase transition VO_2 films with M_2 phase in inductively coupled plasma assisted reactive sputtering

电感耦合等离子体辅助反应溅射中M_2相相变VO_2薄膜的生长

• 发表时间: 2011
• 作者: T. Watanabe;Md. Suruz Mian;K.Okimura and J. Sakai
• 通讯作者: K.Okimura and J. Sakai

Electrical Properties of Vanadium Dioxide Thin Films on Silicon Substrate with Metal-Insulator Transition

硅衬底上金属-绝缘体转变二氧化钒薄膜的电性能

• 发表时间: 2012
• 作者: Nurul Hanis Azhan and Kunio Okimura