Study of ZnS epitaxial layer by triple co-doping method

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In order to realize the blue-light-emitting devices, we have investigated the influence of systematically varying of temperature of In source in the range from 550 to 800℃ on N incorporation, microstructures and electrical properties of triple-codoped ZnS thin films. A series of vapor-phase epitaxial ZnS : (Ag,In, and N) films were prepared on semi-insulating GaAs (100) substrates with H_2+NH_3 gas flow. The amount of NH_3 flow varied from 100 to 500 ccm. The Ag source temperature was kept at 950℃.On the basis of the analysis of N profiles obtained by SIMS measurements, an increase in N concentrations with increasing an incorporation of In acceptors and In-reactive donors was deduced. Hall measurements using the Van der Pauws method at room temperature revealed that free hole concentrations and Hall mobility range (1.31-8.76)×10^<18> cm^<-3> and 58.4-80.5 cm^2/Vs, respectively.It was established that the growth conditions with the amount of NH_3 flow varying from 200 to 300 ccm and In source about 650 to 750℃ in temperature are very effective for the realization of good p-type ZnS : (Ag,In,N) with high Hall mobility.