Study of ZnS epitaxial layer by triple co-doping method

三重共掺杂法ZnS外延层的研究

• 批准号: 16560286
• 负责人: KISHIMOTO Seiichi
• 金额: $ 1.92万
• 依托单位: Kochi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560286/
• 关键词: vapor phase epitaxy; zinc sulfide; Hall effect measurement; doping; co-doping; epitaxial growth; エピタキシャル成長; 気相成長法

In order to realize the blue-light-emitting devices, we have investigated the influence of systematically varying of temperature of In source in the range from 550 to 800℃ on N incorporation, microstructures and electrical properties of triple-codoped ZnS thin films. A series of vapor-phase epitaxial ZnS : (Ag,In, and N) films were prepared on semi-insulating GaAs (100) substrates with H_2+NH_3 gas flow. The amount of NH_3 flow varied from 100 to 500 ccm. The Ag source temperature was kept at 950℃.On the basis of the analysis of N profiles obtained by SIMS measurements, an increase in N concentrations with increasing an incorporation of In acceptors and In-reactive donors was deduced. Hall measurements using the Van der Pauws method at room temperature revealed that free hole concentrations and Hall mobility range (1.31-8.76)×10^<18> cm^<-3> and 58.4-80.5 cm^2/Vs, respectively.It was established that the growth conditions with the amount of NH_3 flow varying from 200 to 300 ccm and In source about 650 to 750℃ in temperature are very effective for the realization of good p-type ZnS : (Ag,In,N) with high Hall mobility.

为了实现蓝光发光器件，我们研究了在550800℃范围内系统地改变In源温度对三元共掺薄膜的氮掺杂、微结构和电学性能的影响。采用H_2+NH_3气体在半绝缘的GaAs(100)衬底上制备了一系列气相外延的ZnS：(Ag，In，N)薄膜。NH3流量在100~500 ccm之间变化。银源温度保持在950℃。根据SIMS测量得到的N分布的分析，得出了N浓度随In受体和In-反应给体掺杂量的增加而增加的结论。室温下用范德波斯方法测量的霍尔迁移率范围和自由空穴浓度分别为(1.31-8.76)×10^-lt；18-gt；cm-3&gt；和58.4-80.5cm2/vs。结果表明，NH3流量在200~300ccm，源区温度在650~750℃范围内的生长条件对实现高霍尔迁移率的p型硫化锌是非常有效的。