Study of co-doping of Ag and In in ZnS:N/GaAs layers prepared by vapor phase epitaxy

气相外延ZnS:N/GaAs层中Ag和In共掺杂的研究

• 批准号: 13650363
• 负责人: KISHIMOTO Seiichi
• 金额: $ 1.15万
• 依托单位: Kochi National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650363/
• 关键词: zinc sulfide; co-doping; photoluminescence; nitrogen doping; vapor phase epitaxy; 不純物ドーピング; codoping; 伝導性制御

Vapor-phase epitaxial ZnS:N/GaAs layers co-doped with In and Agriculture were investigated. Hall-effect measurements at room temperature revealed free hole concentrations and mobility values to be (0.6-1.4)x10^<19> cm^<-3> and 10-25 cm^2/Vs for ZnS:N, Agriculture, In layers, respectively. Almost temperature independent free hole concentrations of these layers indicate formation of impurity band. Concentrations of electrically active acceptor, donor, and neutral impurities were estimated from the temperature dependences of mobility values and hole concentrations. Appearance of the "Blue-Agriculture emission" and low resistive p-type conduction were compatible only for ZnS:N.Agriculture, In layers. Moreover, the photoluminescence spectra, which were influenced by the amount of NH_3 flow, were studied.

研究了In和AgNO 3共掺杂的ZnS：N/GaAs气相外延层。室温下的霍尔效应测量显示，ZnS：N、Agriculture、In层的自由空穴浓度和迁移率值分别为（0.6-1.4）x10^<19>cm^2<-3>和10-25 cm ^2/Vs。这些层的自由空穴浓度几乎与温度无关，表明杂质带的形成。电活性受体，供体和中性杂质的浓度估计从迁移率值和空穴浓度的温度依赖性。“蓝色农业发射”的出现和低电阻p型导电仅对于ZnS：N。农业，In层是相容的。研究了NH_3流量对荧光光谱的影响。

项目成果

Tetsuya Yamamoto, Seiichi Kishimoto, Seishi Iida: "Material Design for p-Type ZnS with Blue Ag Emission by Triple-Codoping Method"Physica Status Solid (b). vol. 229. 371-375 (2002)

Tetsuya Yamamoto、Seiichi Kishimoto、Seishi Iida：“通过三重共掺杂方法进行蓝色银发射的 p 型 ZnS 材料设计”物理状态固体 (b)。

岸本誠一: "気相エピタキシャル硫化亜鉛ZnS膜への不純物ドーピングの影響"高知工業高等専門学校学術紀要. 48. 45-49 (2003)

Seiichi Kishimoto：“杂质掺杂对气相外延硫化锌 ZnS 薄膜的影响”高知国立工业大学学术通报 48. 45-49 (2003)。

Tetsuya Yamamoto, Seiichi Kishimoto, Seishi Iida: "Control of Valence States for ZnS by Triple-Codoping Method"Proc. of Intern. Conf. on Defects in Semiconductors. (2001)

Tetsuya Yamamoto、Seiichi Kishimoto、Seishi Iida：“通过三重共掺杂方法控制 ZnS 的价态”Proc。

山本哲也, 岸本誠一, 飯田誠之: "Control of Valence States for ZnS by Triple-Codoping Method"Proc. of Intern. Conf. on Defects in Semiconductors. (2001)

Tetsuya Yamamoto、Seiichi Kishimoto、Masayuki Iida：“通过三重共掺杂方法控制 ZnS 的价态”实习生会议论文 (2001)。

Seiichi Kishimoto: "Effect of Impurities Doping into ZnS Layers Grown by Vapor Phase Epitaxy"Bulletin of Kochi National College of Technology. vol.48. 45-50 (2003)

Seiichi Kishimoto：“通过气相外延生长的 ZnS 层中杂质掺杂的影响”高知国立技术学院通报。