Study of co-doping of Ag and In in ZnS:N/GaAs layers prepared by vapor phase epitaxy

点击翻译按钮获取中文摘要

Vapor-phase epitaxial ZnS:N/GaAs layers co-doped with In and Agriculture were investigated. Hall-effect measurements at room temperature revealed free hole concentrations and mobility values to be (0.6-1.4)x10^<19> cm^<-3> and 10-25 cm^2/Vs for ZnS:N, Agriculture, In layers, respectively. Almost temperature independent free hole concentrations of these layers indicate formation of impurity band. Concentrations of electrically active acceptor, donor, and neutral impurities were estimated from the temperature dependences of mobility values and hole concentrations. Appearance of the "Blue-Agriculture emission" and low resistive p-type conduction were compatible only for ZnS:N.Agriculture, In layers. Moreover, the photoluminescence spectra, which were influenced by the amount of NH_3 flow, were studied.