Study on yellow/green semiconductor laser diodes

黄/绿半导体激光二极管的研究

• 批准号: 16560308
• 负责人: NOMURA Ichirou
• 金额: $ 2.37万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560308/
• 关键词: green emission; yellow emission; semiconductor laser diode; II-VI compound semiconductor; InP substrate; superlattice; n-tvne cloning; light emitting diode; レーザ; BeZnSeTe; BeZnCdSe; 超寿命動作; ZnCdSe; タイプIIヘテロ接合; 量子井戸; フォトルミネッセンス; MgZnCdSe; 分

We investigated Be composition dependencies of the luminescence property of BeZnSeTe II-VI compound semiconductors grown on InP substrates, resulting in obtaining bright luminescence in green region. Then we proposed a MgSe/BeZnSeTe superlattice(SL) barrier layer to confine carriers and optical field into the BeZnSeTe active layer, and improved the growth conditions such as the Zn irradiation at the SL interfaces. Based on these results, we fabricated light emitting devices. The device consisted of a BeZnSeTe quantum well active layer sandwiched by MgSe/BeZnSeTe SL barrier layers, MgSe/ZnCdSe SL n-cladding, and MgSe/BeZnTe SL p-cladding layers. In order to reduce the hetero barrier at the type-II hetero junction of the n-cladding and the n-barrier layers, we introduced a MgSe/ZnCdSe graded SL structure into the hetero junction. In the graded SL, the MgSe layer thickness ratio was gradually increased from 40 to 60 % along the growth direction from the n-cladding to the n-barrier side. By current injections, we observed green emissions around 530 nm. By aging tests of the devices under direct current injections, we obtained long life operations beyond 4800 h with no catastrophic degradation.In addition, we developed new p-cladding layer materials. We proposed a new doping technology that is inserting high p-doped ZnTe or ZnSeTe layers at regular intervals into ZnCdSe and MgSe/ZnCdSe SL layers which are inferior in p-doping, and experimentally proved the technology to be effective for p-doping. For example, the p-doping concentration of ZnCdSe which had been about 31016 cm-3 before was remarkably improved to be 8×1017 cm-3 using the technology. In the case of the MgSe/ZnCdSe SL, a high p-doping concentration of 4.6×1017 cm-3 was obtained at a wide bandgap of 2.33 eV. Applying the doping technology for the p-cladding layer, we fabricated light emitting devices. Consequently we obtained orange emissions around 600 nm.

我们研究了生长在InP衬底上的BeZnSeTe II-VI族化合物半导体的发光特性与Be组分的关系，得到了绿色区的明亮发光。在此基础上，我们提出了MgSe/BeZnSeTe超晶格（SL）阻挡层，将载流子和光场限制在BeZnSeTe有源层中，并改进了SL界面处的Zn辐照等生长条件。基于这些结果，我们制作了发光器件。该器件由MgSe/BeZnSeTe SL势垒层、MgSe/ZnCdSe SL n-包覆层和MgSe/BeZnTe SL p-包覆层夹在中间的BeZnSeTe量子阱有源层组成。为了减少异质势垒的n-包层和n-势垒层的II型异质结，我们引入了MgSe/ZnCdSe梯度SL结构的异质结。在分级SL中，MgSe层厚度比沿着从n-包覆到n-势垒侧的生长方向从40%逐渐增加到60%。通过电流注入，我们观察到530 nm附近的绿色发射。通过对器件进行直流注入老化试验，我们获得了超过4800 h的长寿命运行，并且没有发生灾难性退化。此外，我们还开发了新的p-包层材料。提出了一种新的掺杂技术，即在p型掺杂较差的ZnCdSe和MgSe/ZnCdSe SL层中以一定的间隔插入高p型掺杂的ZnTe或ZnSeTe层，并通过实验验证了该技术对p型掺杂的有效性。例如，ZnCdSe的p掺杂浓度由之前的约31016 cm-3显著提高到8×1017 cm-3。在MgSe/ZnCdSe SL的情况下，在2.33 eV的宽带隙处获得了4.6×1017 cm-3的高p掺杂浓度。应用p-包层掺杂技术，我们制作了发光器件。因此，我们获得了约600 nm的橙子发射。

项目成果

Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates

Zn 辐照对 InP 衬底上 MgSe/BeZnSeTe II-VI 化合物超晶格 MBE 生长的影响

• 发表时间: 2007
• 期刊: Journal of Crystal Growth 301/302
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura
• 通讯作者: Ichirou Nomura

Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates

InP 基板上的 BeZnSeTe/MgZnCdSe 可见光发光二极管的使用寿命长达 5000 小时以上

• 发表时间: 2006
• 期刊: physica status solidi(b) Vol.243,No.4
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura;Ichirou Nomura;Ichirou Nomura
• 通讯作者: Ichirou Nomura

High p-type doping of MgZnCdSe on InP substrates by inserting ZnTe thin layers

通过插入 ZnTe 薄层在 InP 衬底上高 p 型掺杂 MgZnCdSe

• 发表时间: 2006
• 期刊: physica status solidi(c) Vol.3,No.4
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura;Ichirou Nomura;Ichirou Nomura;Takumi Saitoh
• 通讯作者: Takumi Saitoh

Zn irradiation effects in MBE growth of MgSeBeZnSeTe II-VI compound superlattices on InP substrates

Zn 辐照对 InP 衬底上 MgSeBeZnSeTe II-VI 化合物超晶格 MBE 生长的影响

• 发表时间: 2007
• 期刊: Journal of Crystal Growth Vol. 301-302
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino
• 通讯作者: Kishino

半導体レーザ

半导体激光器

• 发表时间: 2006