Developments of newer oxysulfide semiconductors for magnetic and fluorescence materials

(1)铜铁矿型三元氧化物如CuAlO_2作为热电材料和透明半导体材料受到广泛关注。CuLaO_2是铜铁矿的一种，具有很好的应用前景。采用固相反应法制备了铜铁矿型结构的单相CuLaO_2。结果表明，采用La（OH）_3，将La（OH）_3：Cu_2O =1：1.425的非化学计量比的混合粉末在真空中焙烧，可得到几乎单相的CuLaO_2，但含有微量的金属铜。所得CuLaO_2为p型半导体，Seebeck系数为70 μV/K。以La_2O_3为原料，将化学计量比的混合粉末在氩气保护下烧结，得到单相CuLaO_2。Sr、Ca掺杂样品的发光强度比未掺杂的CuLaO_2高一个数量级。[（2）层状氧硫化物LaCuOS是 ...更多信息 一种与代表性的宽禁带半导体相比表现出优异性能的宽禁带p型半导体。本文尝试了一种不使用La_2S_3的合成单相LaCuOS粉末的工艺方法，并报道了用La_2S_3和2CuO两种原料混合煅烧的方法。在600℃低温真空条件下制备的LaCuOS样品，其禁带宽度为3.1eV。本文以La_2S_3、CuO和（In_2S_3或Y_2S_3）粉末为原料，采用固相反应法合成了单相In或Y掺杂LaCuOS。X射线衍射和漫反射光谱分析结果<1-x><1-x>表明，在x = 0.2以下，In和Y掺杂的LaCuOS固溶体均为单相。In掺杂（x &lt; 0.3）和Y掺杂（x &lt; 0.15）LaCuOS的光致发光光谱显示出比未掺杂LaCuOS更高的发光强度。少

(1) Delafossite-type ternary oxides such as CuAlO_2 have received much attention as a material for thermoelectric application and transparent semiconductor. CuLaO_2 is one of delafossites and hence is expected to have valuable properties. The preparation of single-phase CuLaO_2 with delafossite-type structure by means of the solid-state reaction method was investigated. The results showed nearly single-phase CuLaO_2, although a trace amount of metallic copper was included, was obtained by using La(OH)_3, and firing the mixed powder with non-stoichiometric composition ratio of La(OH)_3 : Cu_20 =1 : 1.425 in a vacuum. The CuLaO_2 thus obtained was a p-type semiconductor and has the Seebeck coefficient of 70 μV/K. The single-phase CuLaO_2 was obtained by using La_20_3, and firing the mixed powder with stoichiometric composition ratio in Argon. The emission intensities of samples doped by Sr or Ca were higher of one order than that of non-doped CuLaO_2.[(2)The layered oxysulfide LaCuOS is … More a wide-gap p-type semiconductor that exhibits exceptional properties compared to representative wide-gap semiconductors. We have attempted the process method for synthesizing a single phase of LaCuOS powders not using La_2S_3, and reported by the calcinations from the combination of two materials, La_2S_3 and 2CuO. These results of the samples prepared at the lower temperature of 600℃ under a vacuum showed to have the single phase of LaCuOS with a band gap of about 3.1eV. We have developed for synthesizing a single phase of In-or Y-doped LaCuOS by solid phase reaction method using La_2S_3, CuO and (In_2S_3 or Y_2S_3) powders. The results of X-ray diffraction and diffuse reflective spectroscopy of La_<1-x>In_xCuOS and La_<1-x>Y_xCuOS samples prepared from the combinations showed that the single phase of In-and Y-doped LaCuOS solid solutions below about x = 0.2. These photoluminescence spectra of In-doped (x < 0.3) and Y-doped (x < 0.15) LaCuOS showed to have higher emission intensities than that of non-doped LaCuOS. Less