Developments of newer oxysulfide semiconductors for magnetic and fluorescence materials

(1)CuAlO_2等德拉磷矿型三元氧化物作为热电材料和透明半导体材料备受关注。CuLaO_2是蓝闪石中的一种，因此有望具有有价值的性质。研究了用固相反应法制备单相钙钛矿结构的CuLaO2。结果表明，在非化学计量比La(OH)3：Cu20=1：1.425的条件下，用La(OH)3在真空中烧成的CuLaO2粉末，虽然含有微量的金属铜，但几乎是单相的CuLaO2。所得CuLaO_2为p型半导体，其塞贝克系数为70μV/K。用La_2O_3在Ar中烧成化学计量比的混合粉末，得到单相CuLaO_2。掺锶或钙的样品的发射强度比未掺杂的CuLaO_2高一个数量级。[(2)层状硫氧化物LaCuOS为…更像是一种宽禁带p型半导体，与典型的宽禁带半导体相比，它具有优异的性能。我们尝试了不使用La_2S_3合成单相LaCuOS粉末的工艺方法，并报道了用La_2S_3和2CuO两种材料组合焙烧的方法。结果表明，在真空下600℃的低温下制备的样品为LaCuOS单相，禁带宽度约为3.1 eV。以La_2S_3、CuO和(In_2S_3或Y_2S_3)粉末为原料，采用固相反应法合成了单相掺In或Y掺杂LaCuOS。X-射线衍射和漫反射光谱结果表明，掺In和掺Y的LaCuOS固溶体的单相x=0.2。与未掺杂LaCuOS相比，In掺杂(x&lt；0.3)和Y掺杂(x&lt；0.15)LaCuOS具有更高的发光强度。较少

(1) Delafossite-type ternary oxides such as CuAlO_2 have received much attention as a material for thermoelectric application and transparent semiconductor. CuLaO_2 is one of delafossites and hence is expected to have valuable properties. The preparation of single-phase CuLaO_2 with delafossite-type structure by means of the solid-state reaction method was investigated. The results showed nearly single-phase CuLaO_2, although a trace amount of metallic copper was included, was obtained by using La(OH)_3, and firing the mixed powder with non-stoichiometric composition ratio of La(OH)_3 : Cu_20 =1 : 1.425 in a vacuum. The CuLaO_2 thus obtained was a p-type semiconductor and has the Seebeck coefficient of 70 μV/K. The single-phase CuLaO_2 was obtained by using La_20_3, and firing the mixed powder with stoichiometric composition ratio in Argon. The emission intensities of samples doped by Sr or Ca were higher of one order than that of non-doped CuLaO_2.[(2)The layered oxysulfide LaCuOS is … More a wide-gap p-type semiconductor that exhibits exceptional properties compared to representative wide-gap semiconductors. We have attempted the process method for synthesizing a single phase of LaCuOS powders not using La_2S_3, and reported by the calcinations from the combination of two materials, La_2S_3 and 2CuO. These results of the samples prepared at the lower temperature of 600℃ under a vacuum showed to have the single phase of LaCuOS with a band gap of about 3.1eV. We have developed for synthesizing a single phase of In-or Y-doped LaCuOS by solid phase reaction method using La_2S_3, CuO and (In_2S_3 or Y_2S_3) powders. The results of X-ray diffraction and diffuse reflective spectroscopy of La_<1-x>In_xCuOS and La_<1-x>Y_xCuOS samples prepared from the combinations showed that the single phase of In-and Y-doped LaCuOS solid solutions below about x = 0.2. These photoluminescence spectra of In-doped (x < 0.3) and Y-doped (x < 0.15) LaCuOS showed to have higher emission intensities than that of non-doped LaCuOS. Less