Hydrophilic of substrate surface for high quality film deposition using by high density radical treatment

基材表面具有亲水性，可通过高密度自由基处理实现高质量薄膜沉积

• 批准号: 17560009
• 负责人: IZUMI Akira
• 金额: $ 2.3万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560009/
• 关键词: Hot wire; nitridation; ammmonia; silicon nitride; HMDS; SiCN

This paper reports about low-temperature nitridation of silicon surfaces using ammonia decomposed species generated on a heated tungsten filament. The surface of Si(100) was nitrided at low temperatures as low as 50℃. The relation between nitridation time and nitridation layer thickness showed that the layer thickness follows the linear law for small nitridation time and a parabolic relationship for large time. The water contact angle measurements revealed that nitridation layer proceeds with island growth in the early stage of nitridation.SiCN films were deposited by Hot-wire CVD method using Hexamethyldisilazane (HMDS) which is an organic liquid material without exposition. It is found that SiCN films can be deposited using only HMDS as a source material. It is also found that the composition ratio of SiCN can be controlled by changing the flow rate of NH_3.

本文报道了利用加热钨丝上产生的氨分解物种对硅表面进行低温氮化。Si（100）表面在50℃的低温下氮化。氮化时间与氮化层厚度的关系表明，氮化时间较小时，氮化层厚度遵循线性规律，氮化时间较长时，氮化层厚度遵循抛物线规律。水接触角的测量表明，在氮化初期，氮化层以岛状生长的方式进行。结果发现，SiCN薄膜可以只使用HMDS作为源材料沉积。通过改变NH_3的流量可以控制SiCN的组成比。

项目成果

低温ポリシリコン薄膜トランジスターの開発 第9章HWCVD(Cat-CVD)法による薄膜の成膜技術

低温多晶硅薄膜晶体管的开发第9章采用HWCVD（Cat-CVD）法的薄膜沉积技术

• 发表时间: 2006
• 作者: 浦岡行治(監修);和泉 亮
• 通讯作者: 和泉 亮

Ultra thin silicon nitride prepared by direct nitridation using ammonia decomposed species

氨分解物直接氮化制备超薄氮化硅

• 发表时间: 2006
• 期刊: Thin Solid Films 501
• 作者: A.Izumi

Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials

• DOI: 10.1016/j.tsf.2007.06.184
• 发表时间: 2008-01
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: T. Nakayamada;K. Matsuo;Y. Hayashi;A. Izumi;Y. Kadotani

Reduction of oxide layer on various metal surfaces by atomic hydrogen treatment

• DOI: 10.1016/j.tsf.2007.06.094
• 发表时间: 2008-01-15
• 期刊: THIN SOLID FILMS
• 影响因子: 2.1
• 作者: Izumi, Akira;Ueno, Tomoya;Nishiyama, Iwao
• 通讯作者: Nishiyama, Iwao

Deposition of SiCN films using organic liquid materials by HWCVD method

• DOI: 10.1016/j.tsf.2005.07.210
• 发表时间: 2006-04-20
• 期刊: THIN SOLID FILMS
• 影响因子: 2.1
• 作者: Izumi, A;Oda, K
• 通讯作者: Oda, K