二重量子井戸構造における電子波干渉効果

双量子阱结构中的电子波干涉效应

• 批准号: 06238213
• 负责人: 澤木 宣彦
• 金额: $ 1.6万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06238213/
• 关键词: 電子波干渉; 二重量子井戸; トンネル効果; 電子格子相互作用; エネルギー緩和; フェムト秒分光; 飛行時間法; フォノン散乱

GaAs/AlGaAs二重量子井戸構造を有する1次元細線における電子散乱と干渉効果を明らかにすることを目的として、量子井戸間の電子散乱と1次元細線構造における電子のエネルギー緩和現象を検討した。先ず、二重量子井戸構造におけるサブバンド間散乱と干渉に関する実験では、外部電圧を印加することによりそれぞれの量子井戸に局在する電子状態のエネルギー間隔を変え、波動関数の干渉(共鳴)を起こさせることによりトンネル効果の確率がどのように変化するかをフェムト秒分光法で測定し共鳴幅(5meV)における準位の僅かの差による電子の流れが生ずることを見いだした。また、p形二重量子井戸構造における正孔のサブバンド間散乱をホール効果の測定により初めて見いだした。次に、細線構造における電子散乱現象を明らかにするためにウエットエッチング法により線幅0.3μmの1次元細線を作製し、フェムト秒ホトルミネッセンス強度相関法を用いて電子のエネルギー緩和時間を測定した。その結果、1次元構造では音響フォノンと電子との相互作用が緩和され、エネルギー緩和時間が長くなることを見いだした。特に電子の運動エネルギーがGaAsの光学フォノンエネルギーより小さい場合には外部電界による加熱効果が電子格子相互作用によるエネルギー緩和効果を凌駕することを示す負の相関波形が得られた。これらの結果は1次元構造では電子散乱現象が緩和され電子波干渉長が長くなることを示唆している。今後、1次元二重量子井戸構造における上記測定を行い電子波干渉と散乱現象を明らかにする予定である。

GaAs/AlGaAs double quantum well structure has 1st dimension fine wire, electron scattering and interference effect, electron scattering and interference mitigation phenomenon between quantum wells are discussed. The quantum well structure of the first and second quantum wells is composed of two parts: the first part is composed of two parts: the first part is composed of two parts: the second part is composed of two parts: the first part is composed of two parts: the second part is composed of two parts: the first part is composed of two parts: the first part is composed of two parts: the second part is composed of two parts: the first part is composed of two parts: the first part is composed of two parts: the second part is composed of two parts: the first part is composed of three parts: the first part is composed of two parts: the first part is composed of three parts: the second part is composed of two parts: the first part is composed of three parts: the first part is composed of two parts: the first part is composed of three parts: the first part is composed of three parts: the second part is composed of three parts: the first part is composed of three parts: the second part is composed of three parts: the third part is composed of three parts: the first part is composed of three parts The accuracy of the interference (resonance) of the ratio is determined by the second spectrophotometry. The accuracy of the interference (resonance) is determined by the difference of the electron flow. The structure of double quantum well with p-shape is characterized by the following: The electron scattering phenomenon in the secondary and fine wire structure was determined by the intensity correlation method, and the relaxation time of the electron scattering phenomenon was determined by the intensity correlation method. As a result, the first dimensional structure of the sound wave and the interaction of the electron wave are relaxed, and the relaxation time of the sound wave and the electron wave is long. In particular, the motion of the electron is generated by the GaAs optical system. In the case of small electrons, the heating effect is generated by the electron lattice interaction, and the negative correlation effect is obtained. As a result, the phenomenon of electron scattering is mitigated by the one-dimensional structure, and the electron wave interference is prolonged. In the future, the structure of 1-dimensional double quantum well will be determined.

项目成果

S.Niwa: "On the Electron Mobility in Quasi-One Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching" Digest 7th Internal Micro Process Conf.274-275 (1994)

S.Niwa：“论全息光刻和湿化学蚀刻制造的准一维结构中的电子迁移率”摘要第七届内部微工艺会议 274-275 (1994)

N.Sawaki: "Electron Mobility in Quasi-One-Dimensional Structures" Semicond.Sci.and Technol.9. 946-950 (1994)

N.Sawaki：“准一维结构中的电子迁移率”Semicond.Sci.and Technol.9。

S.Niwa: "On the Electron Mobility in Quasi-One Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching" Jpn.J.Appl.Phys.33. 7180-7183 (1994)

S.Niwa：“关于全息光刻和湿化学蚀刻制造的准一维结构中的电子迁移率”Jpn.J.Appl.Phys.33。