Development of Field Emitters with Advanced Functions and Narrow Energy Spread

开发具有先进功能和窄能量扩散的场发射器

• 批准号: 12135202
• 负责人: MIMURA Hidenori
• 金额: $ 18.56万
• 依托单位: Shizuoka University (2003)Tohoku University (2000-2002)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12135202/
• 关键词: Si emitter; GaAs emitter; Diamond emitter; energy analyser; miniature x-ray tube; Smith-Purcell radation; field emitter; time resolved x-ray radiograpy; 電子ビーム; スミスパセール光; 機能性電子源; 低エネルギー分散化; カーボンナノチューブ; 変調電子ビーム; 光照射効果; Si電界放射陰極; 平面陰極; 高輝度電子

(a)Emitters with advanced functions : We have successfully fabricated the GaAs field emitter with an aspect ratio larger than 10 using both dry-and wet-etching. The saturation behavior is observed in the current-voltage characteristics of the GaAs emitter, suggesting that the bunched beam generated by the Gunn effect is emitted directly from the GaAs emitter. We have fabricated the novel planar emitter using polycrystalline diamond. Uniform emission with low emission angle is observed at the low gate voltage of 15V.(b)Emitters with narrow energy spread : We have measured energy spread of the electrons emitted from the single-tip Si field emitter using a parallel-type energy analyzer. We have also measured energy spread f the electrons emitted from the single-tip Si field emitter using a cylindrical energy analyzer, which is not affected by the emission angle. The energy distribution indicates that some trapped electrons contribute the field emission.(C)Novels devices with field emitters : We have successfully observed Smith-Purcell radiation at an acceleration voltage of 20 kV and a beam current of 200nA in a visible-to-near infrared light region using a single tip Si field emitter. We have also developed a miniature size x-ray tube using the novel graphite emitter formed by the etching of a graphite substrate. We have demonstrated time-resolved x-ray radiography, whose time resolution is 10μsec.

(A)具有先进功能的发射体：我们用干法和湿法两种方法成功地制备了长宽比大于10的砷化镓场发射体。在发射极的电流-电压特性中观察到饱和现象，这表明由Gunn效应产生的聚束光束是从发射极直接发射的。我们用多晶金刚石制作了一种新型的平面发射体。在15V的低栅压下观察到均匀的低发射角发射。(B)窄能散发射体：我们用平行型能量分析仪测量了单尖硅场发射体发射的电子的能散。我们还用圆柱形能量分析仪测量了电子从单尖硅场发射极发射的能量分布，它不受发射角度的影响。(3)场发射器件：利用单尖硅场发射装置，在可见光-近红外光区，成功地观测到加速电压为20千伏、束流为200 nA的Smith-Purcell辐射。我们还利用通过刻蚀石墨衬底形成的新型石墨发射器开发了一种微型X射线管。我们已经演示了时间分辨X射线照相，其时间分辨率为10μ秒。

项目成果

H.Mimura et al.: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Jpn.J.Appl.Phys.. 42. 4048-4050 (2003)

H.Mimura 等人：“Si 尖端上亚微米单金刚石颗粒的生长及其场发射特性”Jpn.J.Appl.Phys.. 42. 4048-4050 (2003)

H.Mimura et al.: "Future concept for compact FEL using a field emission micro-cathode"Nuclear Instr.Meth.Phys.Resear.A. (In press). (2004)

H.Mimura 等人：“使用场发射微阴极的紧凑型 FEL 的未来概念”Nuclear Instr.Meth.Phys.Resear.A。

H.Mimura: "Photoresponse of a p-type Si field emitter"J. Vac. Sci. Tech., in press. B. (2004)

H.Mimura：“p 型硅场发射体的光响应”J。

H.Mimura: "GaAs lateral field emitters for generation of modulation beam using Gunn effect"13th Internatonal Vacuum Microelectronics Conferece. 234-235 (2000)

H.Mimura：“利用耿氏效应生成调制光束的砷化镓横向场发射器”第十三届国际真空微电子会议。

H.Ishizuka et al.: "Laser-assisted electron emission from gated field-emitters"Nuclear Instr.Meth.Phys.Resear.A. 483. 305-309 (2002)

H.Ishizuka 等人：“门控场发射器的激光辅助电子发射”Nuclear Instr.Meth.Phys.Resear.A。