Microwave and mm-meter wave devices using GaAs Gunn emitters

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GaAs shows the Gunn effect, where an electric field domain is created and periodically traveled. We have studied a GaAs-based field emitter for the generation of bunched beam directly from the emitter using the Gunn effect.l. We fabricated conventional Gunn diodes and studied the relation between the diode structures and the oscillation characteristics. The experimental results reveal that a GaAs emitter with an aspect ratio larger than 10 is necessary to get the Gunn effect in the emitter structure. Then, we have successfully fabricated the GaAs field emitter with an aspect ratio larger than 10 using both dry- and wet-etching.2. We observed saturation behavior in the current-voltage characteristic of the GaAs emitter. This result strong suggests that the bunched beam generated by the Gunn effect is emitted from the cathode.3. To get a direct evidence of the bunched beam, we designed and fabricated a measurement system of the bunched beam frequency.4. We designed and fabricated the vacuum chamber that is used for the generation of mm- and sub mm-meter wave using the bunched beam and a grating.