Interface control and carrier transport in molecular materials
Interface control and carrier transport in molecular materials
批准号:
17069003
负责人:
IWASA Yoshihiro
金额:
$50.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2009
中文摘要
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英文摘要
By means of nanoscled interface control in organic field effect transistors (OFETs), we have achieved following four major achievements, all of which make important benchmarks. (1)The highest mobility of 40cm^2/Vs among organic FETs. (2)First measurement of Hall effect on OFETs. (3)First realization of ambipolar light emitting transistor of organic single crystals. (4)Highest transconductance among OFETs using the electric double layer configuration.
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有機デバイスの半導体物理と界面機能
半导体物理和有机器件的界面函数
DOI:
--
发表时间:
2010
期刊:
固体物理 45
影响因子:
--
作者:
[竹延大志, 岩佐義宏]
通讯作者:
岩佐義宏
Fabrication of ambipolar light-emitting transistor using high-ohotoluminescent organic single crystal
高光致发光有机单晶制备双极发光晶体管
DOI:
--
发表时间:
2008
期刊:
Proceedings of SPIE - The International Society for Optical Engineering 6999
影响因子:
--
作者:
[Bisri S.Z, et.al.]
通讯作者:
et.al.
Blue-light-emitting ambipolar field-effect transistors using an organic single crystal of 1,4-Bis(4-methvlstyryl)benzene
使用1,4-双(4-甲基苯乙烯基)苯有机单晶的蓝光双极场效应晶体管
DOI:
--
发表时间:
2008
期刊:
Appl. Phys. Express 1
影响因子:
--
作者:
[Nakanotani, H, et.al.]
通讯作者:
et.al.
Field effect transistors of single crystal benzo-annulated fused oligothiophenes and oligoselenophenes
单晶苯并环稠合低聚噻吩和低聚硒吩的场效应晶体管
DOI:
--
发表时间:
2007
期刊:
Matereial Research Society Symposium Proceedings 1003
影响因子:
--
作者:
[Y. Tominari, et. al.]
通讯作者:
et. al.
Suppression of the unconbentional metallic behavior by gate voltage in MWNT device
MWNT器件中栅极电压抑制非常规金属行为
DOI:
--
发表时间:
2005
期刊:
Physica E-Low-Dimensional Systems & Nanostructures 29(3-4)
影响因子:
--
作者:
[馬場俊彦, 佐々木弘和, 足立淳, 川崎俊史, 森大祐, T.Kanbara et al.]
通讯作者:
T.Kanbara et al.
共 183 条
Control of Electronic Properties of Materials Using Ultrahigh Electric Field at Electrochemical Interfaces
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批准号:21224009
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项目类别:Grant-in-Aid for Scientific Research (S)
-
资助金额:$140.19万
-
财政年份:2009
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负责人:IWASA Yoshihiro
-
依托单位:
Control of electronic and optical properties in nanomaterials and their functional interfaces
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批准号:17204022
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$30.04万
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财政年份:2005
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负责人:IWASA Yoshihiro
-
依托单位:
Phase Control of Fullerene Materials through Chemical Synthesis and Field Effect Doping
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批准号:13440110
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.88万
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财政年份:2001
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负责人:IWASA Yoshihiro
-
依托单位:
Electronic states of metal nanoparticles investigated by far infrared spectroscopy
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批准号:11640312
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:1999
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负责人:IWASA Yoshihiro
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依托单位:
Search for Novel Carbon Based Nanonetwork Materials and their Properties
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批准号:11165218
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas (A)
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资助金额:$28.1万
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财政年份:1999
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负责人:IWASA Yoshihiro
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依托单位:
Synthesisand properties of C_<60> based mutielement compounds
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批准号:08454095
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.06万
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财政年份:1996
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负责人:IWASA Yoshihiro
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依托单位:
Raman scattering study on organic semiconductors having gigantic dielectric constant
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批准号:01550007
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.54万
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财政年份:1989
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负责人:IWASA Yoshihiro
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依托单位: