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Phase Control of Fullerene Materials through Chemical Synthesis and Field Effect Doping

通过化学合成和场效应掺杂实现富勒烯材料的相控制

基本信息

批准号：
13440110
负责人：
IWASA Yoshihiro
金额：
$ 10.88万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

Organic thin film transistors (TFTs) are attracting a great deal of attention due to the relatively high field-effect mobility in several organic materials. In these organic semiconductors, however, researchers have not established a reliable method of doping in a very low density level, although this has been crucial for technology development of inorganic semiconductors. Here we discuss a new technique that enables us to control the charge density at the channel by employing organosilane self-assembled monolayers (SAMs) on SIO_2 gate insulators. SAMs with fluorine and amino groups have been shown to accumulate holes and electrons, respectively, in the transistor channel : These properties are understood in terms of the effects of electric dipoles of the SAMs molecules and weak charge transfer between organic films and SAMs.In-situ high pressure x-ray diffraction experiments and the first-principle local density functional calculations revealed that a transformation from the two-dimensional (2D) tetragonal C60 polymer to a three-dimensional (3D) polymer takes place via. a highly anisotropic compression of C60 molecules along the c-axis, as an irreversible first-order order transformation above 20 GPa. In the 3D polymer phase, the 2+2 bonds remains in the 2D plane, while neighboring layers are connected by the 3+3 bonds. The bulk modulus of the 3D polymer was 407 GPa, being slightly smaller than that of diamond.

有机薄膜晶体管（TFT）由于在几种有机材料中相对高的场效应迁移率而吸引了大量的关注。然而，在这些有机半导体中，研究人员还没有建立一种可靠的方法，在一个非常低的密度水平掺杂，虽然这是至关重要的技术发展的无机半导体。在这里，我们讨论了一种新的技术，使我们能够控制在沟道的电荷密度，通过采用有机硅烷自组装单分子层（SAMs）的SiO_2栅极绝缘体。具有氟和氨基的自组装膜已被证明分别在晶体管沟道中积累空穴和电子：这些性质的理解，在条款的电偶极子的自组装分子和有机膜和自组装膜之间的弱电荷转移的影响。原位高压X射线衍射实验和第一性原理局域密度泛函计算表明，从二维（2D）四嵌段C60聚合物到三维（3D）聚合物的反应通过以下方式进行。C60分子沿着c轴的高度各向异性压缩，作为20 GPa以上的不可逆一级转变。在3D聚合物相中，2+2键保留在2D平面中，而相邻层通过3+3键连接。3D聚合物的体积模量为407 GPa，略小于金刚石的体积模量。