Control of Electronic Properties of Materials Using Ultrahigh Electric Field at Electrochemical Interfaces

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We have developed electric double layer transistor (EDLT) devices, which allows us a high density carrier accumulation exceeding the limit of all solid field effect transistors, taking the advantage of the ultrahigh electric field generated at the electrochemical interfaces. We applied this technique to a wide range of materials including bulk crystals, thin films, and nanodevices fabricated by an exfoliation method combined with electron beam lithography. We succeeded in electrical phase control of superconductivity, ferromagnetism, and Mott-Hubbard transitions in various materials, among which we were able to encounter novel phenomena which are impossible in conventional all solid field effect transistors. We also found novel functions of EDLTs, such as electrical control of spin polarization and flexible devices, all of which indicates that EDLT is an extremely powerful technique to further broaden materials science.