Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface

绝缘体半导体界面界面偶极子的综合观测

基本信息

  • 批准号:
    21246008
  • 负责人:
  • 金额:
    $ 29.7万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    2009
  • 资助国家:
    日本
  • 起止时间:
    2009 至 2011
  • 项目状态:
    已结题

项目摘要

To elucidate the origin of interface dipoles presented at dielectric and semiconductor interface, flatband voltages of MOS capacitors with rare earth oxides have been characterized. A model to reproduce the thickness dependent flatband voltage shift has been proposed. The composition of Si atoms in oxides rarely affects the magnitude of interface dipole. Oxygen atom supply at the interface, either by rare earth oxide stacking or by process, can shift the flatband voltage, suggesting that the main origin of interface dipole is due to oxygen defect during silicate reaction.
为了阐明电介质和半导体界面处出现的界面偶极子的起源,对稀土氧化物 MOS 电容器的平带电压进行了表征。提出了一种再现厚度相关平带电压偏移的模型。氧化物中Si原子的组成很少影响界面偶极子的大小。界面处的氧原子供应,无论是通过稀土氧化物堆积还是通过工艺,都可以改变平带电压,这表明界面偶极子的主要来源是由于硅酸盐反应过程中的氧缺陷。

项目成果

期刊论文数量(21)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
  • DOI:
    10.1016/j.sse.2011.10.006
  • 发表时间:
    2012-02-01
  • 期刊:
  • 影响因子:
    1.7
  • 作者:
    Kawanago, T.;Suzuki, T.;Iwai, H.
  • 通讯作者:
    Iwai, H.
Electrical Characteristics of Rare Earth(La, Ce, Pr and Tm)Oxides/Silicates Gate Dielectric
稀土(La、Ce、Pr ​​和 Tm)氧化物/硅酸盐栅极电介质的电特性
  • DOI:
  • 发表时间:
    2010
  • 期刊:
  • 影响因子:
    0
  • 作者:
    K.Matano;et al.
  • 通讯作者:
    et al.
Characterization of flatband voltage roll-off and roll-up behavior in La_2 O_3/silicate gate dielectric
La_2 O_3/硅酸盐栅介质中平带电压滚降和滚升行为的表征
EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
  • DOI:
    10.1109/ted.2011.2174442
  • 发表时间:
    2012-02
  • 期刊:
  • 影响因子:
    3.1
  • 作者:
    T. Kawanago;Yeonghun Lee;K. Kakushima;P. Ahmet;K. Tsutsui;A. Nishiyama;N. Sugii;K. Natori;T. Hattori;H. Iwai
  • 通讯作者:
    T. Kawanago;Yeonghun Lee;K. Kakushima;P. Ahmet;K. Tsutsui;A. Nishiyama;N. Sugii;K. Natori;T. Hattori;H. Iwai
Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm
稀土氧化物对 La_2O_3 栅极电介质的覆盖效应,将等效氧化物厚度缩放至 0. 5 nm
  • DOI:
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M. Kouda;K. Kakushima;P. Ahmet;K. Tsutsui;A. Nishiyama;N. Sugii;K. Natori;T. Hattori;H. Iwai
  • 通讯作者:
    H. Iwai
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IWAI Hiroshi其他文献

IWAI Hiroshi的其他文献

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{{ truncateString('IWAI Hiroshi', 18)}}的其他基金

Establishment and analysis of preventive treatment for age-related hearing loss by transfer of T cell fractions
通过 T 细胞片段转移预防年龄相关性听力损失的方法的建立和分析
  • 批准号:
    19K09920
  • 财政年份:
    2019
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Prevention of age-related hearing loss by alteration of cellular immunity
通过改变细胞免疫来预防与年龄相关的听力损失
  • 批准号:
    16K11202
  • 财政年份:
    2016
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Thymus transplantation therapy for age-related hearing loss and analysis of the mechanism of thymus functions
胸腺移植治疗年龄相关性听力损失及胸腺功能机制分析
  • 批准号:
    25462655
  • 财政年份:
    2013
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fundamental Experiments of Single-chamber SOFC Fed with Humidified Pre-mixed Gas
加湿预混合气体单室SOFC基础实验
  • 批准号:
    24656136
  • 财政年份:
    2012
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Realization of Gradual Direct Internal Reforming on SOFC Anode by Controlling its Meso/Microstructure
通过控制SOFC阳极细观/微观结构实现逐步直接内部重整
  • 批准号:
    23360098
  • 财政年份:
    2011
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Immunological prevention of age-related hearing loss : analysis of its molecular biological mechanisms
年龄相关性听力损失的免疫预防:分子生物学机制分析
  • 批准号:
    21592170
  • 财政年份:
    2009
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Autothermal direct internal reforming on SOFC electrode
SOFC 电极自热直接内部重整
  • 批准号:
    21760155
  • 财政年份:
    2009
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Robustness of Three-Dimensional MOSFETs
三维 MOSFET 的鲁棒性
  • 批准号:
    18063009
  • 财政年份:
    2006
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Analysis of preventive mechanisms of presbycusis using bone marrow transplantation and parabiosis
骨髓移植与联体共生预防老年性耳聋的机制分析
  • 批准号:
    18591895
  • 财政年份:
    2006
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Regeneration of the cochlear cells by bone marrow stem cells
骨髓干细胞再生耳蜗细胞
  • 批准号:
    14571648
  • 财政年份:
    2002
  • 资助金额:
    $ 29.7万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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Innovative Chemical Sensor Based on Interface State Control of Oxide Semiconductor Nanowires with PN Junction
基于PN结氧化物半导体纳米线界面状态控制的创新化学传感器
  • 批准号:
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同时实现键形成和功能化的半导体界面工程
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通过实验验证进行高级计算,以准确描述半导体技术中与界面相关的现象
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半导体与吸附金属络合物界面处的激发态相互作用
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