Multimorphism observed in peculiar silicide semiconductors and its applications to materials science

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The possibility for the improvement of thermoelectric properties of Ru silicide(Ru2Si3) has been investigated through controlling multimorphic nano-structures that are formed based on the variety of the arrangement of the Si sublattice. An attempt has also been made to establish a guiding principles for new materials search for better thermoelectric properties and the property improvement The multimorphic interface that is recently found to occur between a series of Chimney-Ladder compounds possesses an idealistic interface to scatter phonon but to transmit electrons, since the metal sublattice is kept the same across the interface but the periodicity of screw arrangement of Si atoms is different across the interface. The effectiveness of the multimorphic interface in improving the thermoelectric properties of Ru silicide-based materials was clearly shown by experiment.