New thermoelectric materials with high performance (ZT>l)-Re silicide 4
New thermoelectric materials with high performance (ZT>l)-Re silicide 4
批准号:
14350369
负责人:
INUI Haruyuki
金额:
$10.94万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
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英文摘要
There is a renewed interest in thermoelectric materials because of the increased attention to environmental safety. The performance of thermoelectric properties is usually evaluated with the so-called dimensionless figure of merit ZT where Z=α^2σ/κ, and, α, σ, κ denote Seebeck coefficient, electrical conductivity respectively and thermal conductivity. The performance is better for the larger ZT value and it is generally believed that the condition of ZT>1 must be satisfied for thermoelectric materials to be practically used. We have recently found that Re-silicide exhibits a large ZT value close to ZT=1. In the present study, we made an effort to further improve the thermoelectric performance of this Re-silicide through ternary alloying. We expect the performance improvement not only through the changes in electronic structure but also through microstructure changes such as the change in the density and arrangement of Si vacancies and the formation of incommensurate structure. The bina … More ry silicide exhibits ZT=0.75 at 800K when measured along [001]. When transition-metals are replaced with Re, incommensurate microstructures are usually formed starting with the shear structure followed by the adaptive structure as the alloying content increases. The alloying amount at which the transition from the shear to adaptive structures occurs depend on each alloying elements. This occurs at a low content for Mo and W while the adaptive structure does not form within the solubility limit for Ru, Fe, Cr and Nb. Generally speaking, the property improvement occurs when the alloy takes the adaptive-type structure, whereas when the alloy takes the shear-type structure, no significant improvement occurs. The ZT value of 0.85 is achieved for 2at.% Mo added Re-silicide, which exhibits an adaptive structure. When Al is added to replace Si, the adaptive structure is locally formed in the close vicinity of twin boundaries. This leads to the significantly decreased thermal conductivity, resulting in the Zt value greater than 1 at 400K. Less
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H.Inui: "Crystal Structure and Thermoelectric Properties of ReSi_<1.75> Silicide"Materials Research Society Symposium Proceedings. (印刷中). (2003)
H.Inui:“ReSi_<1.75>硅化物的晶体结构和热电性能”材料研究会研讨会论文集(2003 年出版)。
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H.Inui et al.: "Properties and Microstructures of a High-Performance Thermoelectric Intermetallic Compounds -β-Zn_4Sb_3"Materials Science Forum. 426-432. 75-81 (2003)
H.Inui 等人:“高性能热电金属间化合物 -β-Zn_4Sb_3 的性能和微观结构”材料科学论坛 426-432 (2003)。
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H.Inui et al.: "Thermoelectric Properties of ReSi_<1.75> Based Silicides -Property Improvements through Defect Engineering"Proc.12th Int.Symp.on Processing and Fabrication of Advanced Materials (ASM). (in press). (2004)
H.Inui等人:“ReSi_<1.75>基硅化物的热电性能-通过缺陷工程改进性能”Proc.12th Int.Symp.on Advanced Materials (ASM)加工和制造。
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H.Inui: "Reduction of the C49→C54 Phase Transformation Temperature in Co-Sputtered TiSi_2 Thin Films by Ternary Alloying"Intermetallics. 11・5. 417-424 (2003)
H.Inui:“通过三元合金化降低共溅射 TiSi_2 薄膜中的 C49→C54 相变温度”11・5 (2003)。
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作者:
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通讯作者:
H.Inui: "Thermoelectric Properties of ReSi_<1.75> Based Silicides - Property Improvements through Defect Engineering"Proc. 12^<th> Int.Symp. on Processing and Fabrication of Advanced Materials. (印刷中). (2004)
H.Inui:“基于 ReSi_<1.75> 的硅化物的热电性能 - 通过缺陷工程改进性能”Proc. 12^<th> Int.Symp,关于先进材料的加工和制造(2004 年)。
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