New AlPN/GaN semiconductor heterojunctions for better GaN based electronics

该提案旨在发展新的iii族氮化半导体合金Al1-xGaxPyN1-y的生长，该合金可以作为具有高自发极化的势垒层材料。与传统的AlGaN/GaN HEMT相比，Al1-xGaxPyN1-y势垒会在AlGaPN/GaN HEMT的GaN通道界面诱导更多的电荷。因此，无论hemt是为射频还是电力电子设计的，它的使用都有望在hemt中实现更高的功率密度。此外，它可以生长与GaN匹配的晶格，例如AlP10.5N89.5，这将提高器件可靠性并为新器件概念铺平道路。AlPyN1-y于2020年在名古屋大学（NU）首次合成。这是通过在MOVPE中使用前体叔丁基膦（tBP）来实现的。生长还不成熟，许多物理性质还不确定。在国际联合项目中提出的合作的优势在于有机会研究与日本的tBP和德国的无碳磷化氢（PH3）互补的Al1-xGaxPyN1-y的生长和性能，共同的目标是展示其与AlxGa1-xN相比的优势，作为最先进的hemt中的屏障层，并在垂直功率器件中实现新的器件概念。

The proposal aims to develop the growth of the new group III-Nitride semiconductor alloy Al1-xGaxPyN1-y which can serve as a barrier layer material with high spontaneous polarization. An Al1-xGaxPyN1-y barrier would induce more charges at the interface to the GaN channel of an AlGaPN/GaN HEMT as compared to conventional AlGaN/GaN HEMTs. Its use therefore promises higher power densities in HEMTs whether they are designed for RF or for power electronics. Further, it can be grown lattice matched to GaN, e.g. as AlP10.5N89.5, which should improve device reliability and pave the path for new device concepts. AlPyN1-y was first synthesized at Nagoya University (NU) in 2020.This was achieved by the use of the precursor tertiary-butylphosphine (tBP) in MOVPE. The growth is still immature and many physical properties are still uncertain. The strength of the proposed cooperation within the international joint program consists in the opportunity to investigate the growth and properties of Al1-xGaxPyN1-y complementary with tBP in Japan and carbon-free phosphine (PH3) in Germany with the joined aim to demonstrate its superiority compared to AlxGa1-xN as a barrier layer in state of the art HEMTs and to enable new device concepts in vertical Power devices.