New AlPN/GaN semiconductor heterojunctions for better GaN based electronics

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The proposal aims to develop the growth of the new group III-Nitride semiconductor alloy Al1-xGaxPyN1-y which can serve as a barrier layer material with high spontaneous polarization. An Al1-xGaxPyN1-y barrier would induce more charges at the interface to the GaN channel of an AlGaPN/GaN HEMT as compared to conventional AlGaN/GaN HEMTs. Its use therefore promises higher power densities in HEMTs whether they are designed for RF or for power electronics. Further, it can be grown lattice matched to GaN, e.g. as AlP10.5N89.5, which should improve device reliability and pave the path for new device concepts. AlPyN1-y was first synthesized at Nagoya University (NU) in 2020.This was achieved by the use of the precursor tertiary-butylphosphine (tBP) in MOVPE. The growth is still immature and many physical properties are still uncertain. The strength of the proposed cooperation within the international joint program consists in the opportunity to investigate the growth and properties of Al1-xGaxPyN1-y complementary with tBP in Japan and carbon-free phosphine (PH3) in Germany with the joined aim to demonstrate its superiority compared to AlxGa1-xN as a barrier layer in state of the art HEMTs and to enable new device concepts in vertical Power devices.