Device for Pulsed Laser Deposition (PLD) of thin films

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We request a device for pulsed laser deposition (PLD) of thin films, which uses a KrF excimer laser with a wavelength of 248 nm. The chemical focus will be set on depositing films of mainly oxides, but also other complex compounds like oxyfluorides, fluorides, or silicides, as well as carbon materials (amorphous, or diamond like carbon), other chalkogenides or materials for solar cells will be targeted. With the device, both epitaxial as well as polycrystalline films will be grown, and the growth will be monitored in-situ with an integrated RHEED system. The substrate temperature will reach temperatures upto 900 - 1000 °C, and laser pulse, frequency, type and pressure of gas and distances to the target will be varied. The obtained films will be characterized regarding their functional properties via a variety of methods available, among them magnetisation measurements, impedance spectroscopy, as well as electrochemical characterization). By this, we aim to synthesize not only functional materials which cannot be obtained via conventional synthesis routes, but also multilayer systems as prototype for various applications (among them fluoride ion batteries). The system should be user-friendly with low safety requirements to make it accessible to the various users at University of Stuttgart. Via a connection to an available glovebox system, residual partial pressures will be further minimized and handling of sensitive samples will be facilitated.