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In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence

In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence
小掠射角入射 X 射线散射原位观察晶体生长过程
批准号:
09650016
负责人:
FUJII Yoshikazu
金额:
$1.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998

项目摘要

项目成果

FUJII Yoshikazu的其他基金

相关文献

中文摘要
翻译
我们建造了一台紧凑的超高真空(UHV)X射线衍射仪,用于表面掠过X射线散射。利用该仪器对PbSe(III)表面的外延生长进行了原位观察,并在旋转阳极源的情况下,成功地观察到了镜面反射X射线强度的振荡,显示了表面的逐层生长。但对于晶体生长的监测来说,振荡的幅度很小。在此基础上,构建了新的散射X射线强度二维角分布测量系统。利用该系统对晶体生长过程中表面散射X射线强度的二维角分布进行了原位观测,并用掠角X射线散射法对PbSe(III)晶体的生长表面进行了估算。首先,我们通过探测镜面反射X射线,成功地实现了对PbSe(III)的逐层生长的原位观察。接下来,我们观察了晶体生长过程中来自表面的散射X射线强度的二维角分布,并从另一个角度估计了镜面反射X射线和散射X射线的强度比。用该装置对一些工业材料表面进行了机械抛光实验:(1)纯铁多晶表面(铁素体,纯度3,9)在500℃焙烧前后的机械抛光。(2)高速钢(SKH钢)在其制造工艺的不同阶段离子镀TiN的表面。
英文摘要
We have constructed a compact ultrahigh-vacuum (UHV) x-ray diffractometer for surface glancing x-ray scattering. By this instrument, in situ observation of the epitaxial growth of PbSe(III) surfaces performed, and the oscillation of the specularly reflected x-ray intensity showing the layer-by-layer growth of the surface was successfully observed even using a rotating-anode source. But the amplitudes of the oscillation were very small to utilize the monitor of crystal growth. Then we constructed new measurement system of two dimensional angular distribution of scattered x-ray intensity. By this system we tried to perform in situ observation of the two dimensional angular distribution of scattered x-ray intensity from the surfaces during crystal growth.The experiment was estimation of the growing surface of PbSe(III) by means of glancing angle x-ray scattering method. At the first we success to perform in situ observation of layer-by-layer growth of PbSe(III) by the detection of the specularly reflected x-ray from the surface. Next we observed the two dimensional angular distribution of scattered x-ray intensity from the surfaces during crystal growth, and we estimated the intensity ratios of the specularly reflected x-rays and the scattered x-rays at another angle. We could not find obvious oscillation in the ratios.The other experimants were performed on some industrial materials surfaces by this apparatus ; (1) mechanically polished pure iron polycrystal surfaces (ferrite, 3 nines purity) before and after the baking at 500。C for 20 hr in a vacuum of 1 0^<-8> Torr, which shows a sudden broadening of the scattered profiles due to surface roughening, and (2) High Speed Steel (SKH steel) surfaces which are ion-plated by TiN at different stages in their manufacturing processes.
期刊论文(32)
专著(0)
科研奖励(0)
会议论文
K.Yoshida: "Formation of New Bi-Mn Alloy Phases in Vacuum Deposited Films and Their Structure Determinations by Electron Microscopy" “The ELECTRON"Proc.of the International Centennial Symposium on the Eelectron. 645-651 (1998)
K. Yoshida:“真空沉积薄膜中新的 Bi-Mn 合金相的形成及其通过电子显微镜的结构测定”“电子”国际电子百年研讨会论文集 645-651(1998 年)。
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M.Mannami, K.Narumi, F.Kato, Y.Fujii and K.Kimura: "Energy loss of scattered ions at glancing-angle incidence on the crystal surface" Radiat.Phys.Chem.Vol.49. 623-629 (1997)
M.Mannami、K.Narumi、F.Kato、Y.Fujii 和 K.Kimura:“晶体表面掠射角入射时散射离子的能量损失”Radiat.Phys.Chem.Vol.49。
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Y.Fujii: "In situ Observation of Layer-by-layer Growth by Surface X-ray Scattering using a Rotating-anode Source" Surface Sciense Letter. (in press) (1998)
Y.Fujii:“使用旋转阳极源通过表面 X 射线散射对逐层生长进行原位观察”表面科学快报。
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通讯作者:
藤居義和: "X線微小角散乱による多結晶金属表面粗さの新しい評価法" 神戸大学ベンチャー・ビジネス・ラボラトリー年報. 3in press. (1998)
Yoshikazu Fujii:“使用 X 射线小角度散射评估多晶金属表面粗糙度的新方法”神户大学创业商业实验室年度报告(1998 年)。
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30
    In-situ analysis of the growing surface by two dimensional detection of x-ray scattering at small glancing angle incidence
    • 批准号:
      13650012
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.11万
    • 财政年份:
      2001
    • 负责人:
      FUJII Yoshikazu
    • 依托单位:
    Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
    • 批准号:
      11650016
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      1999
    • 负责人:
      FUJII Yoshikazu
    • 依托单位:
    Investigation of the growing surfaces of crystal by X-ray scattering at small glancing angle incidence
    • 批准号:
      07650015
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.28万
    • 财政年份:
      1995
    • 负责人:
      FUJII Yoshikazu
    • 依托单位: