Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
批准号:
11650016
负责人:
FUJII Yoshikazu
金额:
$2.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
我们已经进行了原位观察的PbSe(111)表面的外延生长,和镜面反射的X射线强度的振荡显示的表面的逐层生长被成功地观察到,即使使用一个双阳极源。但振荡的幅度很小,不能用于晶体生长的监测。在此基础上,构建了一套新的散射X射线能量二维角分布测量系统。计算了不同入射角和不同散射角下镜面反射X射线和散射X射线的强度比值,并利用基于动力学散射理论的模拟模型计算了不同入射角和不同散射角下的强度振荡幅度。寻找了散射X射线强度振荡幅度变大的最佳条件。结果表明,当入射角与全反射临界角相同时,振幅最大。设计并启动了“X射线能量二维探测系统”。采用SC、SSD 3种探测容器和CCD X射线能量二维探测系统,测量了从铁表面散射的X射线分布,并进行了对比实验。为了使X射线的1个光子的光量照射在CCD的1个元件单元中,发现可以测量检测到的X射线的能量。提出了降低暗电流噪声的最佳CCD测量条件。并利用CCD对X射线进行了实验研究,初步探索了新型X射线显微镜用于材料表面观察的可能性。
英文摘要
We have performed in situ observation of the epitaxial growth of PbSe (111) surfaces, and the oscillation of the specularly reflected X-ray intensity showing the layer-by-layer growth of the surface was successfully observed even using a rotating-anode source. But the amplitudes of the oscillation were very small to utilize the monitor of crystal growth. Then we constructed a new measurement system of two-dimensional angular distribution of scattered x-ray energy. We also estimated the intensity ratios between the specularly reflected X-rays and the scattered X-rays at another angle.About various incident angles and various scattered angels, the amplitudes of the intensity oscillations were calculated with simulation models based on dynamical scattering theory. The most suitable condition that the amplitude of the oscillation of the scattered X-ray intensity grew big was looked for. The amplitude grew the biggest at the incident angle as same as the critical angle of the total reflection as that result."An x-ray energy two-dimensional detection system" was designed and started. The X-ray distribution that it was scattered from the surface of the iron was measured with three kinds of detection vessels of SC, SSD and the X-ray energy two-dimensional detection system, which used a CCD element, and a comparative experiment was done. To make the amount of light of 1 photon of the X-ray shine in 1 element cell of CCD, it was found out that energy of the detected X-ray could be measured. And, the idea for the most suitable measurement condition of CCD for the energy measurement of photon, dark electric current noise to be reduced was asked. Moreover, some experiments by CCD of the X-ray were done, and the possibility of the new X-ray microscope, which can be observed the surface of the material, was found.
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Y.Fujii: "Small Angel Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小天使掠射X射线散射”离子注入技术-98。
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Y.Fujii: "Small Angle Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小角度掠射X射线散射”离子注入技术-98。
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藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸大学ベンチャー・ビジネス・ラボラトリー年報. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户大学创业商业实验室年度报告 4. 75-80 (1999)。
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Y.Fujii and Kentaroh Yoshida: "In situ observation of growing crystal surfaces by a compact UHV x-ray diffractometer for surface glancing scttering"Annual Report of Venture Business Laboratory, Kobe University. Vol.4. 75-80 (1999)
Y.Fujii 和 Kentaroh Yoshida:“通过用于表面掠射散射的紧凑型 UHV X 射线衍射仪对生长晶体表面进行原位观察”神户大学创业商业实验室的年度报告。
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藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸ベンチャー・ビジネス・ラボラトリー年表. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户创业商业实验室年表。 4. 75-80 (1999)。
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共 6 条
In-situ analysis of the growing surface by two dimensional detection of x-ray scattering at small glancing angle incidence
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批准号:13650012
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:2001
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负责人:FUJII Yoshikazu
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依托单位:
In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence
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批准号:09650016
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.92万
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财政年份:1997
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负责人:FUJII Yoshikazu
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依托单位:
Investigation of the growing surfaces of crystal by X-ray scattering at small glancing angle incidence
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批准号:07650015
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1995
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负责人:FUJII Yoshikazu
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依托单位:
海外基金