Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence

通过小掠射角入射时的 X 射线散射对生长晶体表面进行实时分析

基本信息

  • 批准号:
    11650016
  • 负责人:
  • 金额:
    $ 2.37万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2000
  • 项目状态:
    已结题

项目摘要

We have performed in situ observation of the epitaxial growth of PbSe (111) surfaces, and the oscillation of the specularly reflected X-ray intensity showing the layer-by-layer growth of the surface was successfully observed even using a rotating-anode source. But the amplitudes of the oscillation were very small to utilize the monitor of crystal growth. Then we constructed a new measurement system of two-dimensional angular distribution of scattered x-ray energy. We also estimated the intensity ratios between the specularly reflected X-rays and the scattered X-rays at another angle.About various incident angles and various scattered angels, the amplitudes of the intensity oscillations were calculated with simulation models based on dynamical scattering theory. The most suitable condition that the amplitude of the oscillation of the scattered X-ray intensity grew big was looked for. The amplitude grew the biggest at the incident angle as same as the critical angle of the total reflection as that result."An x-ray energy two-dimensional detection system" was designed and started. The X-ray distribution that it was scattered from the surface of the iron was measured with three kinds of detection vessels of SC, SSD and the X-ray energy two-dimensional detection system, which used a CCD element, and a comparative experiment was done. To make the amount of light of 1 photon of the X-ray shine in 1 element cell of CCD, it was found out that energy of the detected X-ray could be measured. And, the idea for the most suitable measurement condition of CCD for the energy measurement of photon, dark electric current noise to be reduced was asked. Moreover, some experiments by CCD of the X-ray were done, and the possibility of the new X-ray microscope, which can be observed the surface of the material, was found.
我们对PbSe(111)表面的外延生长进行了原位观察,即使使用旋转阳极源也成功地观察到了显示表面逐层生长的镜面反射X射线强度的振荡。但振荡的幅度非常小,无法用于晶体生长的监测。然后我们构建了一个新的散射X射线能量二维角分布测量系统。我们还估计了另一个角度下镜面反射X射线与散射X射线之间的强度比。对于不同的入射角和不同的散射角度,利用基于动态散射理论的模拟模型计算了强度振荡的幅度。寻找散射X射线强度振荡幅度变大的最合适条件。结果表明,在与全反射临界角相同的入射角处振幅最大。“X射线能量二维探测系统”的设计与启动。采用SC、SSD三种探测容器和采用CCD元件的X射线能量二维探测系统测量了铁表面散射的X射线分布,并进行了对比实验。为了使X射线的1个光子的光量照射到CCD的1个元件单元中,发现可以测量检测到的X射线的能量。并且,提出了最适合光子能量测量的CCD测量条件、减少暗电流噪声的想法。此外,还利用X射线CCD进行了一些实验,发现了新型X射线显微镜观察材料表面的可能性。

项目成果

期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Fujii: "Small Angel Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小天使掠射X射线散射”离子注入技术-98。
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Y.Fujii: "Small Angle Glancing X-ray Scattering for Surface Characterization of Ion-Implanted Industrial Materials"Ion Implantation Technology-98. 1. 1121-1124 (1999)
Y.Fujii:“用于离子注入工业材料表面表征的小角度掠射X射线散射”离子注入技术-98。
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    0
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藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸大学ベンチャー・ビジネス・ラボラトリー年報. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户大学创业商业实验室年度报告 4. 75-80 (1999)。
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    0
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Y.Fujii and Kentaroh Yoshida: "In situ observation of growing crystal surfaces by a compact UHV x-ray diffractometer for surface glancing scttering"Annual Report of Venture Business Laboratory, Kobe University. Vol.4. 75-80 (1999)
Y.Fujii 和 Kentaroh Yoshida:“通过用于表面掠射散射的紧凑型 UHV X 射线衍射仪对生长晶体表面进行原位观察”神户大学创业商业实验室的年度报告。
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  • 影响因子:
    0
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藤居義和: "超高真空表面X線回折装置による結晶成長表面のその場観察"神戸ベンチャー・ビジネス・ラボラトリー年表. 4. 75-80 (1999)
Yoshikazu Fujii:“使用超高真空表面 X 射线衍射仪对晶体生长表面进行原位观察”神户创业商业实验室年表。 4. 75-80 (1999)。
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FUJII Yoshikazu其他文献

FUJII Yoshikazu的其他文献

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{{ truncateString('FUJII Yoshikazu', 18)}}的其他基金

In-situ analysis of the growing surface by two dimensional detection of x-ray scattering at small glancing angle incidence
通过小掠射角入射时 X 射线散射的二维检测对生长表面进行原位分析
  • 批准号:
    13650012
  • 财政年份:
    2001
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence
小掠射角入射 X 射线散射原位观察晶体生长过程
  • 批准号:
    09650016
  • 财政年份:
    1997
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Investigation of the growing surfaces of crystal by X-ray scattering at small glancing angle incidence
通过小掠射角入射的 X 射线散射研究晶体生长表面
  • 批准号:
    07650015
  • 财政年份:
    1995
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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