In-situ analysis of the growing surface by two dimensional detection of x-ray scattering at small glancing angle incidence
通过小掠射角入射时 X 射线散射的二维检测对生长表面进行原位分析
基本信息
- 批准号:13650012
- 负责人:
- 金额:$ 2.11万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
When x-rays are applied to the material surface at a grazing angle of incidence, the scattered x-rays including many information of structure on the surface layer are detectable. We estimated the structural change of the depth direction of a material surface layer by analyzing incidence angle dependence of the information that the scattered x-rays have, using that the penetration depth of x-rays changes by changing an incidence angle.For analyzing the intensity oscillation of the specularly reflected x-ray with the layer-by-layer growth of the surface the simulation about some surface layer models was performed based on both of kinematical theory and dynamical theory of scattering. Then we constructed new measurement system of two dimensional distribution of scattered x-ray intensity. By this system we observed the two dimensional angular distribution of scattered x-ray intensity from the surfaces during crystal growth, and we estimated the intensity distribution of the specularly reflected x-rays and the scattered x-rays at another angle.An x-ray energy and intensity two-dimensional detection system used a CCD element was designed, and using this system we detected distribution of scattered x-ray from several kind of specimen surfaces. It was found out that high space resolution of the detected X-ray could be derived by differential operation of the detected x-ray distribution. The suitable measurement condition of CCD to make the amount of light of 1 photon of the X-ray shine in 1 element cell of CCD for the energy measurement of photon was derived, and one photon count of scattered x-ray could be detected.
当X射线以掠入射角照射到材料表面时,表面层上包含许多结构信息的散射X射线是可以检测到的。通过分析X射线散射信息对入射角的依赖关系,利用X射线穿透深度随入射角的变化来估计材料表面层深度方向的结构变化。为了分析镜面反射X射线强度随表面逐层生长的振荡,基于运动学和动力学散射理论,对几种表面层模型进行了模拟。在此基础上,构建了新的散射X射线强度二维分布测量系统。利用该系统观测了晶体生长过程中表面散射X射线强度的二维角分布,并对镜面反射X射线和另一角度的散射X射线的强度分布进行了估算。设计了一套基于电荷耦合器件的X射线能量和强度二维检测系统,并利用该系统对几种样品表面的散射X射线分布进行了检测。结果表明,通过对探测到的X射线分布进行微分运算,可以得到较高的空间分辨率。推导了用于光子能量测量时,使1个X射线的1个光子的光量照射在1个元胞中的合适的测量条件,并能检测到散射X射线的1个光子计数。
项目成果
期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. Fujii, K. Koike, T. Nakayama, K. Yoshida: "Characterization of polycrystalline iron surface under high temperature by small glancing angle X-rays scattering"AsCA01, Prog&Abs. of IVth meeting of asian crystallographic association at Indian Institute of
Y. Fujii、K. Koike、T. Nakayama、K. Yoshida:“通过小掠射角 X 射线散射表征高温下多晶铁表面”AsCA01,Prog
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
Y. Fujii, H. Yasuda: "Study on structural analysis of crystals under surface by small glancing angle X-rays scattering"Annual Report of Venture Business Laboratory, Kobe University. Vol. 7. 15-20 (2002)
Y. Fujii、H. Yasuda:“小掠射角X射线散射对表面下晶体结构分析的研究”神户大学风险商业实验室年度报告。
- DOI:
- 发表时间:
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- 影响因子:0
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藤居 義和: "微小角入射X線散乱による表面近傍結晶構造解析の研究"神戸大学ベンチャー・ビジネス・ラボラトリー年報. 7. 15-20 (2002)
藤井义和:“利用小角入射X射线散射进行近表面晶体结构分析的研究”神户大学创业商业实验室年度报告(2002年)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y.Fujii: "Characterization of polycrystalline iron surface under high temperature by small glancing angle X-rays scattering"Prog. and Abst. of AsCA01. 4. A5-A42 (2001)
Y.Fujii:“通过小掠射角 X 射线散射表征高温下多晶铁表面”Prog。
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FUJII Yoshikazu其他文献
FUJII Yoshikazu的其他文献
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{{ truncateString('FUJII Yoshikazu', 18)}}的其他基金
Real time analysis on the growing crystal surface by X-ray scattering at small glancing angle incidence
通过小掠射角入射时的 X 射线散射对生长晶体表面进行实时分析
- 批准号:
11650016 - 财政年份:1999
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
In-situ observation of the crystal growth process by X-ray scattering at small glancing angle incidence
小掠射角入射 X 射线散射原位观察晶体生长过程
- 批准号:
09650016 - 财政年份:1997
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Investigation of the growing surfaces of crystal by X-ray scattering at small glancing angle incidence
通过小掠射角入射的 X 射线散射研究晶体生长表面
- 批准号:
07650015 - 财政年份:1995
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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