权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

シリコン系ナノ結晶表面での多重励起子の生成

硅基纳米晶表面多重激子的产生

基本信息

批准号：
13F03716
负责人：
Svrcek Vladimir
金额：
$ 1.47万
依托单位：
National Institute of Advanced Industrial Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for JSPS Fellows
财政年份：
2013
资助国家：
日本
起止时间：
2013-04-01 至 2016-03-31
项目状态：
已结题

项目摘要

SiSn-ncs were fabricated by laser ablation in liquid media technique that generates high localized plasma on the surface of amorphous SiSn target. This method synthetized SiSn-ncs alloys that was not possible using conventional techniques such as thin film deposition, high frequency plasma enhanced chemical vapor deposition, or pulsed laser deposition. The nanoparticles generated reach a quantum confinement size about 4nm with clear atomic plans observed by transmission electron microscopy. SiSn-ncs were analyzed by synchrotron radiation XRD to estimate a Si0.88Sn0.12-ncs alloys that can correspond theoretically to direct energy gap transition. Optical bandgap was estimated to be 0.81eV by absorbance measurements, which is well below the silicon bandgap. A low concentration of oxygen on the surface of SiSn-ncs was underlined by Fourier transient infrared spectra, which is of great importance for the stability over time of the devices.The photovoltaic properties of SiSn-ncs were also analyzed using hybrid solar cell devices. Our findings underlines an improvement of the short-circuit current for devices using conjugated polymer PTB7 mixed with SiSn-ncs as active layer. This improvement is related to a better absorption at longer wavelengths due to the low energy band gap and also due to its possible direct transition. An improvement of the open-circuit voltage is also confirmed, related to the bulk heterojunction quality. It is the first report about the photovoltaic effect of SiSn-ncs alloy.

采用液体介质激光烧蚀技术在非晶SiSn靶表面产生高度局域化的等离子体，制备了SiSn-ncs。该方法合成了SiSn-ncs合金，这是使用常规技术如薄膜沉积、高频等离子体增强化学气相沉积或脉冲激光沉积不可能实现的。通过透射电子显微镜观察，生成的纳米颗粒达到约4 nm的量子限制尺寸，具有清晰的原子平面。通过同步辐射XRD分析SiSn-ncs以估计理论上可对应于直接能隙转变的Si 0.88Sn 0.12-ncs合金。通过吸光度测量估计光学带隙为0.81eV，这远低于硅带隙。傅立叶瞬态红外光谱分析表明，SiSn-ncs的表面氧浓度较低，这对器件的长期稳定性具有重要意义，并利用混合太阳能电池器件分析了SiSn-ncs的光伏特性。我们的研究结果强调了使用共轭聚合物PTB 7与SiSn-ncs混合作为有源层的器件的短路电流的改善。这种改进与较长波长处的更好吸收有关，这是由于低能带隙以及其可能的直接跃迁。开路电压的改善也被证实，与体异质结的质量。首次报道了SiSn-ncs合金的光伏效应。