Ultrathin III-V Solar Cells via Crack-Assisted Layer Exfoliation

通过裂纹辅助层剥离的超薄 III-V 太阳能电池

• 批准号: DP220103228
• 负责人: Prof Chennupati Jagadish
• 金额: $ 34.53万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2022
• 资助国家: 澳大利亚
• 起止时间: 2022-09-15 至 2025-09-14
• 项目状态: 未结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP220103228
• 关键词: Ultrathin; III; Solar; Cells; via

III-V semiconductors are excellent photovoltaic materials with highest demonstrated solar-to-electricity conversion efficiencies, but find limited usage in terrestrial applications due to high material and fabrication costs. This project aims to improve the cost-effectiveness of III-V solar cells by developing ultrathin III-V semiconductors via crack-assisted layer transfer approach and epitaxy-free fabrication via heterojunction architectures, paving the way for cost-effective, high-efficiency, flexible solar cells. The expected outcomes include a disruptive technology for integrated photovoltaics, novel contact and passivation materials, as well as new knowledge generated in materials science and optoelectronics disciplines.

III-V族半导体是具有最高太阳能-电力转换效率的优良光伏材料，但由于材料和制造成本高，在陆地应用中的使用有限。该项目旨在通过裂纹辅助层转移方法开发III-V族半导体，并通过异质结架构进行无外延制造，从而提高III-V族太阳能电池的成本效益，为成本效益，高效，灵活的太阳能电池铺平道路。预期成果包括集成光电子学的颠覆性技术，新型接触和钝化材料，以及材料科学和光电子学科产生的新知识。