Exfoliation of intercalated silicene: Towards the fabrication of silicene-based devices

插层硅烯的剥离：面向硅烯基器件的制造

• 批准号: 19K05204
• 负责人: フロランス アントワーヌ
• 金额: $ 2.75万
• 依托单位: Japan Advanced Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2019
• 资助国家: 日本
• 起止时间: 2019-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19K05204/
• 关键词: silicene; exfoliation; hexagonal boron nitride; zirconium diboride; e-beam lithography; SOI; Silicene

Improving the patterning of zirconium diboride thin film by e-beam lithography process was investigated by means of characterzation of patterned thin films with various techniques.These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However, etching at room temperature was found to be slow and to results into overetching below the edges of the photoresist. These investigations gave precious insights into the dimensions and the aspect ratio of the ribbons that can be realized through e-beam lithography.These characterizations also demonstrate that any of the steps of e-beam lithography does not affect the surface of zirconium diboride thin films which is of first importance to make possible the growth of silicene.

研究了电子束光刻工艺对二硼化锆薄膜图形化的影响，通过对图形化薄膜的表征，指出磷酸（H_3PO_4）是一种较好的刻蚀剂。然而，发现在室温下的蚀刻是缓慢的并且导致在光致抗蚀剂的边缘下方的蚀刻。这些研究提供了宝贵的见解的尺寸和纵横比的带，可以实现通过电子束lithography.These表征也表明，任何步骤的电子束lithography不影响表面的二硼化锆薄膜，这是第一重要的，使硅烯的生长成为可能。

项目成果

Emergence of charge density waves in a germanium two-dimensional flatband material

锗二维平带材料中电荷密度波的出现

• 发表时间: 2022
• 作者: Antoine Fleurence;Chi-Cheng Lee;Rainer Friedlein;Yuki Fukaya;Howon Kim;Yukio Hasegawa;Hiroyuki Yamane;Nobuhiro Kosugi;Taisuke Ozaki;and Yukiko Yamada-Takamura
• 通讯作者: and Yukiko Yamada-Takamura

Structural stability of monolayer GaSe with trigonal-antiprismatic structure studied by first-principles calculations

第一性原理计算研究三角反棱柱形单层GaSe的结构稳定性

• 发表时间: 2021
• 作者: H. Nitta;T. Yonezawa;A. Fleurence;Y. Yamada-Takamura;and T. Ozaki
• 通讯作者: and T. Ozaki

First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure

• DOI: 10.1103/physrevb.102.235407
• 发表时间: 2020-06
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Hirokazu Nitta;T. Yonezawa;A. Fleurence;Y. Yamada-Takamura;T. Ozaki

Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure

• DOI: 10.1103/physrevb.102.201102
• 发表时间: 2020-11
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: A. Fleurence;C. Lee;R. Friedlein;Y. Fukaya;S. Yoshimoto;K. Mukai;H. Yamane;N. Kosugi;J. Yoshinobu;T. Ozaki;Y. Yamada-Takamura

Plan-view STEM and STM study of GaSe/Ge(111) moire structures

GaSe/Ge(111) 莫尔结构的平面 STEM 和 STM 研究

• 发表时间: 2019
• 作者: T. Yonezawa;T. Murakami;K. Higashimine;A. Fleurence;Y. Oshima and Y. Yamada-Takamura
• 通讯作者: Y. Oshima and Y. Yamada-Takamura