FET Moisture Sensor Devices composing of Plasma Films

该项目于1985年4月开始，1987年3月完成。本研究项目包括三个方面的内容：（1）制备含氮基团的等离子体薄膜作为一种新型的湿敏材料;（2）对含氮基团的等离子体薄膜进行季铵化处理，以提高等离子体薄膜的湿敏性;（3）季氮的应用-含氮基团的等离子体膜作为用于湿度传感器的新材料可以由氨基硅烷如三甲基二甲胺和双（三甲基二甲胺）形成。（二甲基氨基）甲基乙烯基硅烷。通过对膜中氨基的季铵化处理，可提高膜的湿敏性。通过暴露于溴甲烷蒸气的等离子体膜的季铵化将氨基半定量地转化为阳离子基团（季氮基团）。由季铵化等离子体薄膜构成的湿度传感器可以检测20 - 90%RH的相对湿度，具有清晰的滞后和小于几秒的响应时间。

The project started in April 1985 and completed its program in March 1987. The research project involves three programs: (1) the preparation of plasma films containing nitrogen groups as a new, moisture-sensitive material; (2) the quaternization of the plasma films containing nitrogen groups to improve the moisture sensitivity of the plasma films; (3) the application of the quaternary nitrogen-containing plasma films to moisture sensor devices.Plasma films containing nitrogen groups as a new material for moisture sensors could be formed from aminosilanes such as trimethyldimethylamine and bis(dimethylamino)methylvinylsilane. Their moisutre sensitivity could be improved by quarternization of amino groups of the plasma films. The quaternization of the plasma films by exposure to methylbromide vapor transform semi-quantitatively the amino groups into cationic groups (quaternary nitrogen groups). The moisture sensor devices composing of the quaternized plasma films could detect the relative humidities of 20 - 90 %RH with neglegible hysterisis and short response time of less than a few seconds.