FET Moisture Sensor Devices composing of Plasma Films
由等离子薄膜组成的 FET 湿度传感器装置
基本信息
- 批准号:60550570
- 负责人:
- 金额:$ 1.34万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1985
- 资助国家:日本
- 起止时间:1985 至 1986
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The project started in April 1985 and completed its program in March 1987. The research project involves three programs: (1) the preparation of plasma films containing nitrogen groups as a new, moisture-sensitive material; (2) the quaternization of the plasma films containing nitrogen groups to improve the moisture sensitivity of the plasma films; (3) the application of the quaternary nitrogen-containing plasma films to moisture sensor devices.Plasma films containing nitrogen groups as a new material for moisture sensors could be formed from aminosilanes such as trimethyldimethylamine and bis(dimethylamino)methylvinylsilane. Their moisutre sensitivity could be improved by quarternization of amino groups of the plasma films. The quaternization of the plasma films by exposure to methylbromide vapor transform semi-quantitatively the amino groups into cationic groups (quaternary nitrogen groups). The moisture sensor devices composing of the quaternized plasma films could detect the relative humidities of 20 - 90 %RH with neglegible hysterisis and short response time of less than a few seconds.
该项目于1985年4月开始,1987年3月完成。本研究项目包括三个方面的内容:(1)制备含氮基团的等离子体薄膜作为一种新型的湿敏材料;(2)对含氮基团的等离子体薄膜进行季铵化处理,以提高等离子体薄膜的湿敏性;(3)季氮的应用-含氮基团的等离子体膜作为用于湿度传感器的新材料可以由氨基硅烷如三甲基二甲胺和双(三甲基二甲胺)形成。(二甲基氨基)甲基乙烯基硅烷。通过对膜中氨基的季铵化处理,可提高膜的湿敏性。通过暴露于溴甲烷蒸气的等离子体膜的季铵化将氨基半定量地转化为阳离子基团(季氮基团)。由季铵化等离子体薄膜构成的湿度传感器可以检测20 - 90%RH的相对湿度,具有清晰的滞后和小于几秒的响应时间。
项目成果
期刊论文数量(20)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
稲垣訓宏: "高分子のビーム加工(第3章プラズマ重合による加工)" CMC, 305 (1986)
Norihiro Inagaki:“聚合物的束加工(第 3 章等离子体聚合加工)” CMC,305 (1986)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
N.INAGAKI;K.SUZUKI: JOURNAL OF APPLIED POLYMER SCIENCE. 31. 2473-2481 (1986)
N.INAGAKI;K.SUZUKI:应用高分子科学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
N. Inagaki: "Plasma Coatings" Surface. 23. 42-52 (1985)
N. Inagaki:“等离子涂层”表面。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
稲垣訓宏: "薄膜ガイドブック(第4章プラズマコーデイング)" 理工出版, 140 (1986)
Norihiro Inagaki:“薄膜指南(第 4 章等离子编码)” Riko Publishing,140 (1986)
- DOI:
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- 期刊:
- 影响因子:0
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INAGAKI Norihiro其他文献
INAGAKI Norihiro的其他文献
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{{ truncateString('INAGAKI Norihiro', 18)}}的其他基金
SiOx thin film formation by highly-activated electrons in plasma and application of the deposited SiOx to gas barrier films
等离子体中高活化电子形成SiOx薄膜及其在阻气膜中的应用
- 批准号:
17350106 - 财政年份:2005
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$ 1.34万 - 项目类别:
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Studies on Functional Pressure-sensitive Adhesives
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11650927 - 财政年份:1999
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$ 1.34万 - 项目类别:
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Preparation of Resposive Poymer Surfaces to Environmental Changes
环境变化响应性聚合物表面的制备
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09650993 - 财政年份:1997
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$ 1.34万 - 项目类别:
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Metallization of polymer surfaces for downsizing of electronic devices
聚合物表面金属化以缩小电子设备的尺寸
- 批准号:
09555201 - 财政年份:1997
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$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Surface Modification of Aramide Fibers by Radical Shower
芳纶纤维的自由基喷淋表面改性
- 批准号:
06650761 - 财政年份:1994
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Improved Gas Barrier Properties of PET Fillms by SiOx deposition
通过 SiOx 沉积改善 PET 填料的气体阻隔性能
- 批准号:
06555192 - 财政年份:1994
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Preparation of Carbon Dioxide Separation Membrane by Plasma Polymerization
等离子体聚合制备二氧化碳分离膜
- 批准号:
04650848 - 财政年份:1992
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Pervaporation Separation from low Concentration of Alcohol Aquoeus Solution using Capillary Model
使用毛细管模型从低浓度酒精水溶液中渗透汽化分离
- 批准号:
02650710 - 财政年份:1990
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Surface Modification of Graphite Whisker for Composite Materials by Plasma
复合材料石墨晶须的等离子体表面改性
- 批准号:
63850021 - 财政年份:1988
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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