FET Moisture Sensor Devices composing of Plasma Films

该工程于1985年4月开工，1987年3月完成。本课题主要包括三个方面的内容：(1)制备含氮基等离子膜，作为一种新型的湿敏材料；(2)对含氮基团的等离子膜进行季铵化处理，提高等离子膜的水分敏感性；(3)四元含氮等离子膜在水分传感器器件中的应用。三甲基二甲胺和二（二甲胺）甲基乙烯基硅烷等氨基硅烷可形成含氮基的等离子膜，是一种新型的水分传感器材料。通过对等离子膜的氨基进行季化处理，可以提高等离子膜的水分敏感性。甲基溴蒸气对等离子膜进行季铵化反应，将半定量的氨基转化为阳离子基（季氮基）。由季铵化等离子膜组成的湿度传感器可以检测20 ~ 90% RH的相对湿度，迟滞可以忽略不计，响应时间短，小于几秒。

The project started in April 1985 and completed its program in March 1987. The research project involves three programs: (1) the preparation of plasma films containing nitrogen groups as a new, moisture-sensitive material; (2) the quaternization of the plasma films containing nitrogen groups to improve the moisture sensitivity of the plasma films; (3) the application of the quaternary nitrogen-containing plasma films to moisture sensor devices.Plasma films containing nitrogen groups as a new material for moisture sensors could be formed from aminosilanes such as trimethyldimethylamine and bis(dimethylamino)methylvinylsilane. Their moisutre sensitivity could be improved by quarternization of amino groups of the plasma films. The quaternization of the plasma films by exposure to methylbromide vapor transform semi-quantitatively the amino groups into cationic groups (quaternary nitrogen groups). The moisture sensor devices composing of the quaternized plasma films could detect the relative humidities of 20 - 90 %RH with neglegible hysterisis and short response time of less than a few seconds.