FET Moisture Sensor Devices composing of Plasma Films

该项目于1985年4月启动，1987年3月完成计划。该研究项目涉及三个项目：(1)含氮等离子体膜作为一种新型的湿敏材料的制备；(2)含氮等离子体膜的季节化处理，以提高等离子体膜的湿度敏感性；(3)季铵盐含氮等离子体膜在湿度传感器设备中的应用。通过对等离子体膜的氨基进行季胺化处理，可以提高其感光度。通过暴露在甲基溴蒸气中的等离子体膜的季胺化半定量地将氨基转化为阳离子基团(季氮基)。由季节化等离子体膜组成的湿度传感器可以检测到相对湿度为20-90%的相对湿度，滞后不明显，响应时间短，小于几秒。

The project started in April 1985 and completed its program in March 1987. The research project involves three programs: (1) the preparation of plasma films containing nitrogen groups as a new, moisture-sensitive material; (2) the quaternization of the plasma films containing nitrogen groups to improve the moisture sensitivity of the plasma films; (3) the application of the quaternary nitrogen-containing plasma films to moisture sensor devices.Plasma films containing nitrogen groups as a new material for moisture sensors could be formed from aminosilanes such as trimethyldimethylamine and bis(dimethylamino)methylvinylsilane. Their moisutre sensitivity could be improved by quarternization of amino groups of the plasma films. The quaternization of the plasma films by exposure to methylbromide vapor transform semi-quantitatively the amino groups into cationic groups (quaternary nitrogen groups). The moisture sensor devices composing of the quaternized plasma films could detect the relative humidities of 20 - 90 %RH with neglegible hysterisis and short response time of less than a few seconds.