Improved Gas Barrier Properties of PET Fillms by SiOx deposition

为提高食品包装材料用PET薄膜的气密性，开展了“SiOx沉积法改善PET薄膜的气密性”项目。采用等离子体聚合SiOx沉积法制备有机硅化合物。主要研究结果总结如下：1。四甲基硅烷（TMS）或四甲基氧基硅烷（TMOS）与氧的混合物可通过等离子体聚合形成SiOx膜。当TMS和TMOS聚合时，氧的混合有助于SiOx膜的形成。远距离氧等离子体有效地加速了TMS和TMOS中烷基的降解，从而沉积siox。TMOS与氧浓度为60 mol%的混合物是等离子体聚合法制备SiOx薄膜的较好原料。SiOx沉积在PET膜上，对PET膜的隔气性能有明显的改善。PET薄膜（80nm SiOx厚度）的氧渗速率为14cm^3/m^2-day-atm，比未沉积SiOx的PET薄膜低4倍。

The project named "Improved Gas Barrier Properties of PET Films by SiOx Deposition" was conducted to improve gas barrier properties of PET film used for food packing materials. The SiOx deposition by plasma polymerization of organic silicone compounds was applied for the improvement. Main results are summerized as follows,1.SiOx films could be formed by the plasma polymerization of mixtures of tetramethylsilane (TMS) or tetramethoxysilane (TMOS) and oxygen.2.Mixing of oxygen, when TMS and TMOS were polymerized, contributed the formation of SiOx films.3.Remote oxygen plasma accelerated the degradation of alkyl groups in TMS and TMOS effectively to deposite SiOx.4.The mixture of TMOS and oxygen of 60 mol% was a preferable raw material for preparation of SiOx film by plasma polymerization.The SiOx deposition on PET film showed powerful improvement of gas barrier properties. Oxygen pearmeation rate from the PET film (80nm SiOx thickness) was 14cm^3/m^2-day-atm, which is four times lower than the original PET film without SiOx deposition.