Investigation and Applications of New Electronic Phenomena in the Composite Devices of Supercomductors and Semiconductors.

超导与半导体复合器件中新电子现象的研究与应用。

• 批准号: 62420020
• 负责人: HAYAKAWA Hisao
• 金额: $ 19.01万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62420020/
• 关键词: Superconducting device; SNS junction; InSb; three terminal device; Nb; 超伝導体ー半導体結合; 近接効果; 超伝導半導体結合; 超伝導ー半導体結合; 電子デバイス

Recent developments of computer technologies can give us comfortable living circumstances. The basic technology of the recent high performance computers is the microelectronics appeared in large scale integrated circuits. However, demands of high speed and high density integration against the electronic devices now become more and more increased. In these circumstances, the conventional electronic devices based on the semiconductors may reach at their final limit of performance. New electronic devices, now are requested to answer the hard demands for the electronic devices. Superconduvices are one of the candidates.In this research, Si and InSb semiconductors were examined for their activities as a component of the hybrid device of superconductors and semiconductors. Several types of SNS (super/normal/super) junctions were investigated. Although Si was found to flow supercurrents through the SNS junction, the carrier density was too small to operate at low temperatures. On the other hand, InSb was found to be an important candidate of semiconductors for the application of low temperature superconducting devices such as three terminal devices, because the coherence length was as long as 40um with a carrier density of 10^<17> cm^<-3> at 4.2K.

计算机技术的最新发展可以为我们提供舒适的生活环境。最近的高性能计算机的基本技术是微电子的大规模集成电路出现。但是，现在对电子设备的高速和高密度整合的需求现在越来越多。在这种情况下，基于半导体的常规电子设备可能会达到其最终性能限制。现在，要求新的电子设备回答对电子设备的艰巨需求。超大型紫外病是候选者之一。在这项研究中，SI和INSB半导体的活动是否是超导体和半导体混合设备的组成部分。研究了几种类型的SN（超级/正常/超级）连接。尽管发现SI通过SNS连接流动，但载体密度太小，无法在低温下运行。另一方面，发现INSB是用于应用低温超导设备（例如三个末端设备）的半导体的重要候选者，因为在4.2K处的连贯性长度为40UM，载体密度为10^<17> cm^<-3>。

项目成果

A.Fujimaki: "Experimental Analysis of YBa2Cu3Ox/Ag Proximity Interfaces" Jpn.J.Appl.Phys.29. L1659-L1662 (1990)

A.Fujimaki：“YBa2Cu3Ox/Ag 邻近界面的实验分析”Jpn.J.Appl.Phys.29。

K.Ohbayashi: "High Tc(95K) AsーGrown Superconducting BiーSrーCaーCuーO Thin Films" Jpn.J.Appl.Phys.29. L2049-2052 (1990)

K.Ohbayashi：“高 Tc(95K) 生长超导 Bi-Sr-Ca-Cu-O 薄膜”Jpn.J.Appl.Phys.29 (1990)。

T.Hatou;Y.Takai;H.Hayakawa: Japan.J.Appl.Phys.Lett.27. L617-L618 (1988)

T.Hatou；Y.Takai；H.Hayakawa：日本.J.Appl.Phys.Lett.27。

Y.Takai: "Deposition of YーBaーCuーO Thin Films by RF Magnetron Sputtering with a Grid Electrode:plasma Parameters" Jpn.J.Appl.Phys.29. 1664-1667 (1990)

Y.Takai：“通过栅格电极射频磁控溅射沉积 YーBaーCuーO 薄膜：等离子体参数”Jpn.J.Appl.Phys.29 (1990)。

A. Fujimaki: "Experimental Analysis of YBa2Cu30x/Ag Proximity Interfaces" Jpn. J. Appn. Phys.L1659. 29(9) (1990)

A. Fujimaki：“YBa2Cu30x/Ag 邻近界面的实验分析”Jpn。