Investigation and Applications of New Electronic Phenomena in the Composite Devices of Supercomductors and Semiconductors.

计算机技术的最新发展可以给我们舒适的生活环境。近年来高性能计算机的基本技术是大规模集成电路中出现的微电子技术。然而，现在人们对电子器件的高速、高密度集成的要求越来越高。在这种情况下，基于半导体的传统电子器件可能达到其性能的最终极限。现在需要新的电子设备来满足电子设备的硬性需求。超导是候选之一。在本研究中，考察了Si和InSb半导体作为超导体和半导体混合器件组成部分的活性。研究了几种类型的SNS（超/正常/超）连接。虽然发现Si在SNS结中有超电流流动，但载流子密度太小，无法在低温下工作。另一方面，由于在4.2K时相干长度长达40um，载流子密度为10^<17> cm^<-3>，因此发现InSb是低温超导器件（如三终端器件）应用的重要候选半导体材料。

Recent developments of computer technologies can give us comfortable living circumstances. The basic technology of the recent high performance computers is the microelectronics appeared in large scale integrated circuits. However, demands of high speed and high density integration against the electronic devices now become more and more increased. In these circumstances, the conventional electronic devices based on the semiconductors may reach at their final limit of performance. New electronic devices, now are requested to answer the hard demands for the electronic devices. Superconduvices are one of the candidates.In this research, Si and InSb semiconductors were examined for their activities as a component of the hybrid device of superconductors and semiconductors. Several types of SNS (super/normal/super) junctions were investigated. Although Si was found to flow supercurrents through the SNS junction, the carrier density was too small to operate at low temperatures. On the other hand, InSb was found to be an important candidate of semiconductors for the application of low temperature superconducting devices such as three terminal devices, because the coherence length was as long as 40um with a carrier density of 10^<17> cm^<-3> at 4.2K.