Development of Superhigh-Frequency Electromagnetic-Wave Detectors Using Grain-Boundary Junctions of BKBO

利用 BKBO 晶界结开发超高频电磁波探测器

基本信息

  • 批准号:
    07505014
  • 负责人:
  • 金额:
    $ 3.26万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

Ba_<1-x>K_xBiO_3(BKBO)grain-boundary junctions fabricated on bicrystal substrates are Josephson tunnel junctions which show the SIS (superconductor-insulator-superconductor) feature. A highly-sensitive sensor for superhigh-frequency electromagnetic-waves is a candidate for the application of these junctions, utilizing the gap energy of BKBO wider than those of metal superconductors. In this research, we intended to develop the SIS mixers for the detection of super high-frequency electromagnetic waves using BKBO grain-boundary junctions, and studies on the use of low-permitivity substrates, the improvement of junction properties and the development of junction integration technology (high-frequency circuits) were carried out.1. Establishment of the technology for the deposition of BKBO thin films on low-permittivity substrates :In order to establish the technology for the deposition of thin films on low-permittivity substrates necessary for high-frequency application, we tried to prepar … More e BKBO thin films on Mg (permittivity : 10). Since the deposition of BKBO thin films of high quality on MgO is more difficult than on SrTiO_3 (STO), we investigated the effect of the substrate treatment, buffer layrs, etc. It was found that the in-situ annealing of the substrate before the deposition in the sputter chamber is effective, and BKBO films which shows properties similar to those on STO were obtained. A buffer BKBO layr deposited at a high substrate temperature for a short time prior to the deposition at the normal temperature for superconducting films gives a (100) BKBO film of high quality on (100) MgO substrate.2. Investigation of junction properties :We investigated the properties of the junctions on STO.The velocity of the electromagnetic wave in the barrier of the junction is an order smaller than that reported for junctions of other materials, which suggests the effect of the high permittivity of the substrate and the necessity of low-permittivity substrates.3. Study of high-frequency circuits :We studied the circuits for the basic experiments of the superhigh-frequency detector including junctions and other components such as antennas, etc. Less
在双晶衬底上制备的Ba_<1-x>K_xBiO_3(BKBO)晶界结是具有SIS(超导体-绝缘体-超导体)特征的约瑟夫森隧道结。超高频电磁波的高灵敏度传感器是这些结应用的候选,利用BKBO的间隙能量比金属超导体的间隙能量更宽。在本研究中,我们打算开发利用BKBO晶界结检测超高频电磁波的SIS混频器,并对低介电常数衬底的使用、结性能的改善和结集成技术(高频电路)的发展进行了研究。低介电常数基底上沉积BKBO薄膜技术的建立:为了建立高频应用所需的低介电常数基底上沉积薄膜的技术,我们尝试在Mg(介电常数:10)上制备了…More e BKBO薄膜。由于在MgO上沉积高质量BKBO薄膜比在SrTiO_3 (STO)上沉积困难,我们研究了衬底处理、缓冲层等因素对BKBO薄膜的影响。结果表明,在溅射室沉积前对衬底进行原位退火是有效的,获得了性能与STO相似的BKBO薄膜。在超导薄膜的常温下沉积之前,在高衬底温度下短时间沉积缓冲BKBO层,可以在(100)MgO衬底上获得高质量的(100)BKBO膜。结性质的研究:我们研究了STO上结的性质。电磁波在结势垒中的速度比其他材料结的速度小一个数量级,这表明了衬底的高介电常数的影响和低介电常数衬底的必要性。高频电路的研究:我们研究了超高频探测器的基础实验电路,包括结和天线等元件。少

项目成果

期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S. Imaeda: "Ba_<1-x>K_xBiO_3 Grain Boundary Junctions Prepared on SrTiO_3 Bicrystal Substrates" IEEE Trans. Appl. Supercond.5. 2208-2211 (1995)
S. Imaeda:“Ba_<1-x>K_xBiO_3 在 SrTiO_3 双晶基底上制备的晶界结”IEEE Trans。
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HAYAKAWA Hisao其他文献

HAYAKAWA Hisao的其他文献

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{{ truncateString('HAYAKAWA Hisao', 18)}}的其他基金

Theoretical studies on correlation effects and non-equilibrium phase transitions for high density particles systems
高密度粒子体系相关效应和非平衡相变的理论研究
  • 批准号:
    21540384
  • 财政年份:
    2009
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Kinetic approach to nonequilibrium statistical mechanics
非平衡统计力学的动力学方法
  • 批准号:
    18540371
  • 财政年份:
    2006
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fundamental research on dynamics of dissipative particles
耗散粒子动力学基础研究
  • 批准号:
    15540393
  • 财政年份:
    2003
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Enhancement of the Quality of Stacked-type High-Tc Josephson Junctions by Doping and Development of the Integration Technology for These Junctions
通过掺杂提高堆叠型高温约瑟夫森结的质量及其集成技术的发展
  • 批准号:
    14350185
  • 财政年份:
    2002
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A Study on Josephson Junctions with Controlled Barrier Layrs Operating at 10 K for Integrated Circuit Application
集成电路应用中工作温度为 10 K 的可控势垒层约瑟夫森结的研究
  • 批准号:
    09305026
  • 财政年份:
    1997
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Studies on the Bi System Josephson Junctions with High Criteical Temperature
高临界温度Bi系约瑟夫森结的研究
  • 批准号:
    07455138
  • 财政年份:
    1995
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of waveform observation system with 1ps time resolution and 100 micron specific resolution
开发1ps时间分辨率、100微米特定分辨率的波形观测系统
  • 批准号:
    02555080
  • 财政年份:
    1990
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Investigation and Applications of New Electronic Phenomena in the Composite Devices of Supercomductors and Semiconductors.
超导与半导体复合器件中新电子现象的研究与应用。
  • 批准号:
    62420020
  • 财政年份:
    1987
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
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