Specific gravity difference method in liquid phase epitaxial growth of semiconductor

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The specific gravity difference method, named yo-yo solute feedingmethod, is effective on thick layer growth of silicon and alloy crystals. We have carried out the growth experiments and the numerical analysis for the transport phenomena of the soulte in the growth solution caursed by the yo-yo temperature cycles extending oger two years.1. Numerical analysis: Followings were made clear. Spatial modulation in density in the growth solution resulted from the dissolution of the soulte induces strong convection. This convection enhances the dissolution of the source material set at lower portion of the solution, and stratosphere is formed at upper portion. These processes require about 10 min. The data can be available for improvement of the growth conditions.2. Silicon growth: Lattice-matching condition between grown layer and high resistive non-doped substrate was investigated. X-ray measurements revealed the lattice-matching of heavily phosphorus-doped grown layer could be acheived by adding a suigable amount of tin into indium growth solvent.3. Alloy growth: (1)Phase diagrams concerning the growth of Ge-Si were completed. Ge_<0.2>Si_<0.8> layer of 1 mm in thickness could be grown from tin and indium solvents. (2)GalnAs alloy layer could be grown on GaAs substrate under near pseudo-binary condition at nigh temperature of 1000 C. (3)The initial growth conditions of GalnP alloy on GaP substrate were investigated. Ga_<0.8>In_<0.2>P layer could be directly grown on GaP by cooling the solution very slowly after establishing near-equilibrium condition between growth solution and substrate. Thick layer growth of this alloy will be realized by subsequent yo-yo procedures.We think this growth method will be developed as one of the important-techniques in fufure electronics.