LPE growth of ZnSe and ZnSe-GaAs alloy and their application

研究了一种生长ZnSe晶体层和ZnSe- gaas合金层的液相外延技术。设计了一种用B_2O_3密封的滑船，使汽化组分不会从生长溶液中逸出，并应用于开管生长体系中ZnSe的生长。研究发现，由于ZnSe溶质比In溶剂密度小，溶质向上移动，并在生长溶液上部放置的衬底下表面结晶，表明“溜溜球溶质投料法”可以实现ZnSe的生长。在GaAs和Gap衬底上分别生长出了ZnSe-GaAs和ZnSe-Gap合金体系。这些合金体系对开发ZnSe异质结器件具有重要意义。采用物理气相沉积法在GaAs衬底上制备了ZnSe厚层。这些层可以作为液相外延的衬底，并成功地在其上生长了ZnSe。结果表明，采用LPE技术可以生长出介于ZnSe和III-III-V合金体系之间的合金。

A liquid phase epitaxial technique for the growth of ZnSe crystal layers and ZnSe-GaAs alloy layers was developed.A slide boat sealed with B_2O_3 designed so that the vaporized components did not escape from the growth solution, and applied to the growth of ZnSe in an open-tube growth system. It was found out that the ZnSe solute moved upward because of its smaller density than that of In solvent, and crystallized on the lower surface of the substrate placed at the upper portion of the growth solution, indicating that the "yo-yo solute feeding method" can be available to the growth of ZnSe.The alloy systems of ZnSe-GaAs and ZnSe-Gap were also grown on the GaAs and Gap substrates, respectively. These alloy systems are important for developing the heterojunction devices of ZnSe.The ZnSe thick layers were fabricated on GaAs substrates by physical vapor deposition method. These layers could be used as the substrates in the liquid phase epitaxy, and ZnSe was successfully grown on it. It was made clear that the alloy between ZnSe and III-III-V alloy system could be grown by LPE techniques.