LPE growth of ZnSe and ZnSe-GaAs alloy and their application

ZnSe和ZnSe-GaAs合金的LPE生长及其应用

• 批准号: 03650256
• 负责人: SUKEGAWA Tokuzo
• 金额: $ 1.34万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03650256/
• 关键词: ZnSe; ZnSe-GaAs alloy; liquid phase epitaxy; ZnSe substrate; quasi-closed slide boat; physical vapor deposition; セレン化亜鉛ー砒化ガリウム混晶; 青色発光素子材料; 液相成長

A liquid phase epitaxial technique for the growth of ZnSe crystal layers and ZnSe-GaAs alloy layers was developed.A slide boat sealed with B_2O_3 designed so that the vaporized components did not escape from the growth solution, and applied to the growth of ZnSe in an open-tube growth system. It was found out that the ZnSe solute moved upward because of its smaller density than that of In solvent, and crystallized on the lower surface of the substrate placed at the upper portion of the growth solution, indicating that the "yo-yo solute feeding method" can be available to the growth of ZnSe.The alloy systems of ZnSe-GaAs and ZnSe-Gap were also grown on the GaAs and Gap substrates, respectively. These alloy systems are important for developing the heterojunction devices of ZnSe.The ZnSe thick layers were fabricated on GaAs substrates by physical vapor deposition method. These layers could be used as the substrates in the liquid phase epitaxy, and ZnSe was successfully grown on it. It was made clear that the alloy between ZnSe and III-III-V alloy system could be grown by LPE techniques.

发展了一种液相外延生长ZnSe晶体层和ZnSe-GaAs合金层的技术，设计了一种用B2 O3密封的滑舟，使蒸发组分不会从生长溶液中逸出，并应用于ZnSe的开管生长系统。结果表明，由于ZnSe溶质的密度小于In溶剂的密度，因此ZnSe溶质向上移动，并在生长液上部的衬底下表面结晶，表明“溜溜球溶质供给法”可用于ZnSe的生长。采用物理气相沉积法在GaAs衬底上制备了ZnSe厚膜。这些层可以作为液相外延的衬底，并在其上成功地生长了ZnSe，表明可以用液相外延技术生长ZnSe与III-III-V合金系之间的合金。

项目成果

Fumiyasu Kadotsuji, Hironori Ohnishi, Natsuki Kawabata, Akira Tanaka and Tokuzo Sukegawa: "Growth of ZnSe on GaAs by physical Vapor Deposition Method" Bulletin of the Research Institute of Electronics, Shizuoka University. Vol.27, No.1. 41-46 (1992)

Fumiyasu Kadotsuji、Hironori Ohnishi、Natsuki Kawabata、Akira Tanaka 和 Tokuzo Sukekawa：“通过物理气相沉积法在 GaAs 上生长 ZnSe”静冈大学电子研究所通报。

角辻 文康,大西 弘哲,川端 夏樹,田中 昭,助川 徳三: "PVD法によるZnSe on GaAs成長" 静岡大学電子工学研究所研究報告. 27. 41-46 (1992)

Fumiyasu Kakutsuji、Hironori Onishi、Natsuki Kawabata、Akira Tanaka、Tokuzo Sukekawa：“通过 PVD ​​方法在 GaAs 上生长 ZnSe”静冈大学电子研究所研究报告 27. 41-46 (1992)。