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Liquid Phase Epitaxial Growth of GaInp Alloy Thick Layer and its Application

GaInp合金厚层的液相外延生长及其应用

基本信息

批准号：
01550243
负责人：
SUKEGAWA Tokuzo
金额：
$ 1.41万
依托单位：
Research Institute of Electronics, Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

项目摘要

GalnP alloy is a promising material for green-light-emitting devices. However, the devices made from the alloy have not yet been fabricated by industrial manner. A large obstacle is the absence of the substrate to grown the alloy on. In this study, a technique to prepare an alloy bulk or a thick layer available to the the substrate was developed.To obtain a thick grown layer, a liquid phase growth technique was adopted. Three problems to be solved are 1) escape of P from the growth solution due to evaporation, 2) the substrates for the growth of the alloy ; the substrates cannot be obtained in this stage, and 3) the method to grow a sufficiently thick alloy, which can not be achieved by a conventional slow cooling method. The experimental results are as follows. 1) A quasi-air-tight slide boat was used. The growth rate could be increased as compared with the cases using the conventional open-type boat. 2) Two kinds of substrate were adopted ; GaAsP expensive substrates and GaP substrates used widely. A lattice mismatch exists between a GaP substrate and a grown alloy layer. To relax the mismatch, the fabrication of a step-wise graded composition layer and a continuously graded one on the GaP substrate was investigated. It was made clear that the compositional step of 0.25 mole fraction can be allowed for a layer-mode growth under suitable conditions. In the experiments for the continuously graded composition, the composition could be changed from 0.95 to 0.61 by slow-cooling method. 3) The yo-yo solute feeding method was applied to the growth of a thick layer, and the layer with 200mum thickness could be successfully grown on the GaP substrate. Using 1), 2) and 3) techniques mentioned above, GaInP alloy substrates can be fabricated. Thus, the fundamental techniques to develop a high efficiency greenlight-emitting diode could be established.

镓合金是一种很有前途的绿色发光器件材料。然而，由该合金制成的装置尚未通过工业方式制造。一个很大的障碍是没有衬底上生长的合金。在这项研究中，一种技术，以制备合金块或厚层提供给衬底。为了获得厚的生长层，采用液相生长技术。需要解决的三个问题是：1）由于蒸发，P从生长溶液中逸出; 2）用于生长合金的衬底;在该阶段中不能获得衬底;以及3）生长足够厚的合金的方法，这不能通过常规的缓慢冷却方法来实现。实验结果如下。1)使用了一种准气密滑动船。与使用常规开放式舟皿的情况相比，可以增加生长速率。2)采用了两种衬底：GaAsP昂贵的衬底和GaP广泛使用的衬底。在GaP衬底和生长的合金层之间存在晶格失配。为了缓解失配，研究了在差距衬底上制备阶梯式渐变和连续渐变的组分层。很明显，在合适的条件下，可以允许0.25摩尔分数的组成步骤用于层模式生长。在连续梯度成分实验中，采用缓冷法可将成分从0.95变化到0.61。3)将该方法应用于厚膜的生长，在差距衬底上成功地生长出了200 μ m厚的薄膜.使用上述1）、2）和3）技术，可以制造GaInP合金衬底。从而为研制高效率绿色发光二极管奠定了基础。