Vapor deposition of Si-containing fine ceramic films using Si_2Cl_6 as a source of silicon

以Si_2Cl_6为硅源气相沉积含硅精细陶瓷薄膜

• 批准号: 62550562
• 负责人: MOTOJIMA Seiji
• 金额: $ 1.22万
• 依托单位: Gifu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62550562/
• 关键词: CVD; in-situ CVD; Diffusion process; Hexachlorodisilane; Transition metal silicide; Single crystal; Spring-like fibers; Silicon carbide; 炭化ケイ素; 窒化ケイ素; CVD法; in-situCVD法; ガス拡散処理法; ケイ化クロム; スプリング状ファイバー; 六塩化二ケイ素; ケイ化鉄クロム; シリコナイジング; ケイ化ニッケル /

1) Preparation of Si<@D23@>D2N<@D24@>D2 and SiC films using a Si<@D22@>D2Cl<@D26@>D2 as a silicon source: Si<@D23@>D2N<@D24@>D2 films were obtained on a quartz substrate from a gas mixture of Si<@D22@>D2Cl<@D26@>D2, NH<@D23@>D2, and H<@D22@>D in a temperature range of 800-1300 C. Furthemore, SiC films were obtained from a gas mixture of Si<@D22@>D2Cl<@D26@>D2, C<@D23@>D2H<@D28@>D2, and H<@D22@>D2 in a temperature range of 800-1100 C.2) Vapor-phase siliconizing of transition metals and alloys using a Si_2Cl_6 as a silicon source: Variours kind of metals and alloys, such as Ni, Co, Cr, Fe, stainless steels, were vapoy-phase siliconized using a Si_2Cl_6 as a silicon source. Using Si_2Cl_6 as a silicon source, the siliconizing temperature could be lowered by 250-350 C for Ni, 200 C for Mo, 50 C fro Ti, 200 C for Inconel (#600), and 150 C for monel. The corrosion stability of metal plates against acid solutions were improved considerably by the siliconizing of the surface.3) Crystals of metal silicides were obtained by diffusion and CVD processes using a Si_2Cl_6 as a silicon source.4) We have developed a new crystal growth process using a in-situ-cvd.5) Noble crystals, (Fe, Cr)_xSi_y, was obtained by a vapor-phase siliconizing of stainless steel using a Si_2Cl_6 as a silicon source.6) Noble spring-like fibers of Si_3N_4 was obtained using a Si_2Cl_6 as a silicon source.

1)以Si&lt；@D22@&gt；D2Cl&lt；@D26@&gt；D2为硅源，在石英衬底上用Si&lt；@D22@&gt；@D22@&gt；D2Cl&lt；@D26@&gt；D2和H&lt；混合气体在石英衬底上制备Si&lt；@D23@&gt；D2N&lt；@D24@&gt；D2Cl&lt；@D26@&gt；D2，NH&lt；@D23@&gt；D2和H&lt；在800-1300℃的温度范围内，从Si&lt；@D22@&gt；D2Cl&lt；@D26@&gt；D2，C&lt；@D23@&gt；d2h&lt；@D28@&gt；D2和H&lt；@D22@&gt；D2在800-1100℃范围内使用Si2Cl6作为硅源的过渡金属和合金的气相硅化：使用Si2Cl6作为硅源对多种金属和合金，如Ni、Co、Cr、Fe、不锈钢进行了气相硅化。用Si_2Cl_6作硅源，镍的硅化温度可降低250-350℃，钼可降低200℃，钛可降低50℃，Inconel(#600)可降低200℃，Monel可降低150℃。3)以Si_2Cl6为硅源，通过扩散和CVD法制备了金属硅化物晶体。4)开发了一种新的原位硅化物晶体生长工艺。5)以Si_2Cl_6为硅源，对不锈钢进行气相硅化处理，得到了(Fe，Cr)_xSi_y晶体。

项目成果

元島栖二, 服部達彦, 山口和子: 実務表面技術. 34(7). 274-276 (1987)

Seiji Motoshima、Tatsuhiko Hattori、Kazuko Yamaguchi：实用表面技术 34(7) (1987)。

元島栖二,岩森則行,服部達彦: J.Mater.Sci.21. 3836-3842 (1986)

本岛征尔、岩森纪之、服部龙彦：J.Mater.Sci.21 (1986)。

S. motojima; S. Kuri; T. Hattori: "Preparation and properties of cobalt silicides by diffusion and CVD processes using Si_2Cl_6 as a silicon source" J. Less-Common Met.124. 193-204 (1986)

S.本岛；

元島栖二, 服部達彦: 工業材料. 35(1). 19-23,27 (1987)

本岛诚二，服部龙彦：工业材料 35(1) 19-23,27 (1987)。

元島栖二,大橋千恵,服部達彦,岩永浩: J.Mater.Sci.＆ Eng.,A.

Seiji Motoshima、Chie Ohashi、Tatsuhiko Hattori、Hiroshi Iwanaga：J.Mater.Sci.＆Eng.，A。