Electrical and Optical Characterization of BSO Photorefractive Crystals

BSO 光折变晶体的电学和光学表征

• 批准号: 63550010
• 负责人: SAWADA Takayuki
• 金额: $ 1.22万
• 依托单位: University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550010/
• 关键词: BSO; Photorefractive Crystal; Phase Conjugate Wave; Space Charge Layer; Deep Impurity Level; Thermally Stimulated Current; Image Processing; Diffraction Efficiency; 位相共役波; 旋光性; 光電流; 2光波混合

Purposes of the present study are to characterize BSO crystals by means of simultaneous optical and electrical measurements, and to clarify the degree of correspondence between material parameters deduced from photorefractive properties and those from electrical properties. Main results obtained are following:1. Optical Characterization: (1) Photorefractive properties such as steady-state intensity of the phase conjugate wave (PCW) and recording time versus light-induced grating spacing characteristics can be fundamentally explained by the "band transport model". (2) Effective acceptor density giving rise to photorefractive properties can be determined from the PCW intensity versus fringe spacing curve. (3) A rigorous method for determining the effect of optical activity on PCW intensity and its polarization angle was developed; a maximum diffraction efficiency can be obtained for the transverse configuration with a static electric field generated along the <001> direction. (4) The pro … More duct of the donor concentration and photoionization cross section was determined from the gain coefficient of the two-beam coupling with running hologram. (5) The dependence of the recording time on the acceptor concentration is quite different between the carrier drift region and the carrier diffusion region.2. Electrical Characterization: (1) Material parameters such as carrier mobility, diffusion length and acceptor concentration, determined from steady-state and dynamic photocurrents, are found to be in reasonably agreement with those from photorefractive measurements. (2) Six impurity levels are detected from thermally stimulated current (TSC) measurements, and their influence on photorefractive properties become evident. (3) A new method to characterize the space charge layer formed underneath electrodes is proposed. (4) The above simple electrical measurements are useful for predicting the photorefractive properties.3. Capability of Optical Information Recordings; The resolving angle and the crosstalk of multiple optical information recordings are studied, and minimum resolving angle without crosstalk is determined. Less

本研究的目的是表征BSO晶体通过同时的光学和电学测量，并澄清从光折变性能推导出的材料参数之间的对应程度和那些从电气性能。主要研究结果如下：1.光学表征：（1）“带输运模型”可以从根本上解释相位共轭波（PCW）的稳态强度和记录时间与光致光栅间距特性的关系。(2)有效受体密度引起的光折变性能可以确定从PCW强度与条纹间距曲线。(3)提出了一种确定旋光性对光子晶体衍射光强度及其偏振角影响的严格方法，当光子晶体的横向结构在沿着方向产生静电场时，衍射效率最大<001>. (4)职业 ...更多信息 由双光束与运行全息图耦合的增益系数确定了施主浓度和光电离截面的分布。(5)记录时间对载流子浓度的依赖性在载流子漂移区和载流子扩散区有很大的不同.电气特性：（1）由稳态和动态光电流确定的载流子迁移率、扩散长度和受主浓度等材料参数与光折变测量结果基本一致。(2)通过热激电流（TSC）测量，发现了六个杂质能级，它们对光折变性能的影响是明显的。(3)提出了一种表征电极下空间电荷层的新方法。(4)上述简单的电学测量结果对预测光折变性能是有用的.光学信息记录的能力研究了多次光学信息记录的分辨角和串扰，确定了无串扰的最小分辨角。少

项目成果

J.Chen: "Multiple Optical Information Recording in a Bi_<12> Sio_<20> Crystal" レ-ザ研究. 18. 7-15 (1990)

J.Chen：“Bi_<12>Sio_<20>晶体中的多重光学信息记录”激光研究，18. 7-15 (1990)。

J. Chen: "Multiple Optical Information Recording in a Bi_<12>SiO_<20> Crystal" The Review of Laser Engineering, Vol.18, No.1, pp.7-15(1990).

J. Chen：“Bi_<12>SiO_<20>晶体中的多重光学信息记录”激光工程评论，第18卷，第1期，第7-15页（1990）。

T.Sawada: IEEEJ.Quantum Electronics. (1989)

T.Sawada：IEEEJ.量子电子学。

沢田孝幸: "BSO結晶の光学的特性と電気的特性" 第17回光ファイバ・レ-ザ関係研究発表会予稿集(学内). 23-32 (1989)

Takayuki Sawada：“BSO 晶体的光学和电学特性”第 17 届光纤/激光相关研究会议论文集（内部）23-32（1989）。

沢田孝幸: "BSO光屈折結晶の電気的・光学的評価" 電子情報通信学会技術研究報告. CPM88-99. 65-72 (1988)

Takayuki Sawada：“BSO光折变晶体的电学和光学评估”IEICE技术研究报告。CPM88-99（1988）。