Electrical and Optical Characterization of BSO Photorefractive Crystals

BSO 光折变晶体的电学和光学表征

• 批准号: 63550010
• 负责人: SAWADA Takayuki
• 金额: $ 1.22万
• 依托单位: University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550010/
• 关键词: BSO; Photorefractive Crystal; Phase Conjugate Wave; Space Charge Layer; Deep Impurity Level; Thermally Stimulated Current; Image Processing; Diffraction Efficiency; 位相共役波; 旋光性; 光電流; 2光波混合

Purposes of the present study are to characterize BSO crystals by means of simultaneous optical and electrical measurements, and to clarify the degree of correspondence between material parameters deduced from photorefractive properties and those from electrical properties. Main results obtained are following:1. Optical Characterization: (1) Photorefractive properties such as steady-state intensity of the phase conjugate wave (PCW) and recording time versus light-induced grating spacing characteristics can be fundamentally explained by the "band transport model". (2) Effective acceptor density giving rise to photorefractive properties can be determined from the PCW intensity versus fringe spacing curve. (3) A rigorous method for determining the effect of optical activity on PCW intensity and its polarization angle was developed; a maximum diffraction efficiency can be obtained for the transverse configuration with a static electric field generated along the <001> direction. (4) The pro … More duct of the donor concentration and photoionization cross section was determined from the gain coefficient of the two-beam coupling with running hologram. (5) The dependence of the recording time on the acceptor concentration is quite different between the carrier drift region and the carrier diffusion region.2. Electrical Characterization: (1) Material parameters such as carrier mobility, diffusion length and acceptor concentration, determined from steady-state and dynamic photocurrents, are found to be in reasonably agreement with those from photorefractive measurements. (2) Six impurity levels are detected from thermally stimulated current (TSC) measurements, and their influence on photorefractive properties become evident. (3) A new method to characterize the space charge layer formed underneath electrodes is proposed. (4) The above simple electrical measurements are useful for predicting the photorefractive properties.3. Capability of Optical Information Recordings; The resolving angle and the crosstalk of multiple optical information recordings are studied, and minimum resolving angle without crosstalk is determined. Less

本研究的目的是通过光学和电学同时测量的方法来表征BSO晶体，并澄清由光折变性质推导的材料参数与由电学性质得出的材料参数之间的对应程度。得到的主要结果如下：1.光学特性：(1)光折变特性，如位相共轭波的稳态强度、记录时间对光诱导的栅距特性的影响，可以用“带输运模型”来解释。(2)产生光折变特性的有效受主密度可以由PCW强度与条纹间距的关系曲线确定。(3)建立了确定光学活性对PCW强度及其偏振角影响的严格方法，对于沿&lt；001&gt；方向产生静电场的横向构型，可获得最大的衍射效率。(4)PRO…由双光束耦合运行全息图的增益系数确定了更多的施主浓度和光致电离截面。(5)载流子漂移区和载流子扩散区记录时间与受主浓度的关系有很大不同。电学表征：(1)由稳态和动态光电流测定的载流子迁移率、扩散长度和受主浓度等材料参数与光折变测量结果吻合较好。(2)从热激电流(TSC)测量中检测到六个杂质能级，它们对光折变性能的影响是显而易见的。(3)提出了一种表征电极下方空间电荷层的新方法。(4)上述简单的电学测量对于预测薄膜的光折变特性是有用的。对多路光信息记录的分辨率和串扰进行了研究，确定了无串扰的最小分辨率。较少

项目成果

J.Chen: "Multiple Optical Information Recording in a Bi_<12> Sio_<20> Crystal" レ-ザ研究. 18. 7-15 (1990)

J.Chen：“Bi_<12>Sio_<20>晶体中的多重光学信息记录”激光研究，18. 7-15 (1990)。

J. Chen: "Multiple Optical Information Recording in a Bi_<12>SiO_<20> Crystal" The Review of Laser Engineering, Vol.18, No.1, pp.7-15(1990).

J. Chen：“Bi_<12>SiO_<20>晶体中的多重光学信息记录”激光工程评论，第18卷，第1期，第7-15页（1990）。

T.Sawada: IEEEJ.Quantum Electronics. (1989)

T.Sawada：IEEEJ.量子电子学。

沢田孝幸: "BSO結晶の光学的特性と電気的特性" 第17回光ファイバ・レ-ザ関係研究発表会予稿集(学内). 23-32 (1989)

Takayuki Sawada：“BSO 晶体的光学和电学特性”第 17 届光纤/激光相关研究会议论文集（内部）23-32（1989）。

沢田孝幸: "BSO光屈折結晶の電気的・光学的評価" 電子情報通信学会技術研究報告. CPM88-99. 65-72 (1988)

Takayuki Sawada：“BSO光折变晶体的电学和光学评估”IEICE技术研究报告。CPM88-99（1988）。