Electrical and Optical Characterization of BSO Photorefractive Crystals
Electrical and Optical Characterization of BSO Photorefractive Crystals
批准号:
63550010
负责人:
SAWADA Takayuki
金额:
$1.22万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989
中文摘要
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英文摘要
Purposes of the present study are to characterize BSO crystals by means of simultaneous optical and electrical measurements, and to clarify the degree of correspondence between material parameters deduced from photorefractive properties and those from electrical properties. Main results obtained are following:1. Optical Characterization: (1) Photorefractive properties such as steady-state intensity of the phase conjugate wave (PCW) and recording time versus light-induced grating spacing characteristics can be fundamentally explained by the "band transport model". (2) Effective acceptor density giving rise to photorefractive properties can be determined from the PCW intensity versus fringe spacing curve. (3) A rigorous method for determining the effect of optical activity on PCW intensity and its polarization angle was developed; a maximum diffraction efficiency can be obtained for the transverse configuration with a static electric field generated along the <001> direction. (4) The pro … More duct of the donor concentration and photoionization cross section was determined from the gain coefficient of the two-beam coupling with running hologram. (5) The dependence of the recording time on the acceptor concentration is quite different between the carrier drift region and the carrier diffusion region.2. Electrical Characterization: (1) Material parameters such as carrier mobility, diffusion length and acceptor concentration, determined from steady-state and dynamic photocurrents, are found to be in reasonably agreement with those from photorefractive measurements. (2) Six impurity levels are detected from thermally stimulated current (TSC) measurements, and their influence on photorefractive properties become evident. (3) A new method to characterize the space charge layer formed underneath electrodes is proposed. (4) The above simple electrical measurements are useful for predicting the photorefractive properties.3. Capability of Optical Information Recordings; The resolving angle and the crosstalk of multiple optical information recordings are studied, and minimum resolving angle without crosstalk is determined. Less
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J.Chen: "Multiple Optical Information Recording in a Bi_<12> Sio_<20> Crystal" レ-ザ研究. 18. 7-15 (1990)
J.Chen:“Bi_<12>Sio_<20>晶体中的多重光学信息记录”激光研究,18. 7-15 (1990)。
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通讯作者:
J. Chen: "Multiple Optical Information Recording in a Bi_<12>SiO_<20> Crystal" The Review of Laser Engineering, Vol.18, No.1, pp.7-15(1990).
J. Chen:“Bi_<12>SiO_<20>晶体中的多重光学信息记录”激光工程评论,第18卷,第1期,第7-15页(1990)。
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沢田孝幸: "BSO結晶の光学的特性と電気的特性" 第17回光ファイバ・レ-ザ関係研究発表会予稿集(学内). 23-32 (1989)
Takayuki Sawada:“BSO 晶体的光学和电学特性”第 17 届光纤/激光相关研究会议论文集(内部)23-32(1989)。
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T.Sawada: IEEEJ.Quantum Electronics. (1989)
T.Sawada:IEEEJ.量子电子学。
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沢田孝幸: "BSO光屈折結晶の電気的・光学的評価" 電子情報通信学会技術研究報告. CPM88-99. 65-72 (1988)
Takayuki Sawada:“BSO光折变晶体的电学和光学评估”IEICE技术研究报告。CPM88-99(1988)。
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共 15 条
Characterization and Control of GaN-based semiconductor interfaces for Fabrication of Field Effect Transistors
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批准号:12650320
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
-
财政年份:2000
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负责人:SAWADA Takayuki
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依托单位:
Characterization and Control of Metal/GaN and Insulator/GaN Interfaces for Fabrication of MIS Field Effect Transistors
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批准号:10650316
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:1998
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负责人:SAWADA Takayuki
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依托单位:
Transient Response of Photorefractive Grating in BSO and GaP by Short Light Pulse
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批准号:03650031
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1991
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负责人:SAWADA Takayuki
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依托单位:
海外基金