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Characterization and Control of GaN-based semiconductor interfaces for Fabrication of Field Effect Transistors

用于制造场效应晶体管的 GaN 基半导体界面的表征和控制

基本信息

批准号：
12650320
负责人：
SAWADA Takayuki
金额：
$ 2.3万
依托单位：
Hokkaido Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650320/
关键词：
GaN Schottky Diode MIS Diode AlGaN GaN Heterostructure I-V-T characteristics Schottky Barrier Height Interface State Density Surface Fermi Level 陽極エッチング界面特性電流-電圧特性

项目摘要

Interface properties of metal/GaN, insulator/GaN, and AlGaN/GaN heterostructure have been characterized for the fabrication of MESFET and HEMT devices.1. Characterization of metal/GaN interfaces ; (1) Measured I-V-T and C-V-T characteristics for various metal/n, p-GaN schottky diodes, which include the Richardson plots together with temperature dependences of the effective schottky barrier height (SBH) and the ideality factor, can be consistently explained by the previously proposed "surface patch" model. Only the fraction of the total patchy area of 10^<-5>effectively reduces the SBH at RT, while it does not affect the flat-band SBH deduced from the C-V curve. (2) The true SBHs determined from high-temperature I-V curve are weakly dependent on the metal work function with small S-values of 0.28 for n-and p-GaN samples, respectively. (3) Although the effective SBH for a metal/n-AlGaN sample is considerably lowered at RT, owing to a tunneling current, the true SBH is fairly larger as compared with that for corresponding metal/GaN sample.2. Control of Metal/GaN Interface ; I-V characteristics are greatly improved by an annealing in nitrogen. Thermal oxidation of GaN surface leads to increase of the SBH without noticeable degradation of the diode characteristics.3. Simulation of GaN growth ; A Monte Carlo simulation program for MBE-GaN growth, which incorporates formation of anti-site defect of layer, was developed, and the influence of growth conditions on the flatness of the growth front surface and on defect density was examined.4. Characterization of deep levels ; Capture cross-sections and activation energies for bulk traps and interface states at SiO_2/GaN were determined by C-t measurements.5. Characterization of AlGaN/GaN heterostructures ; (1) Electrical properties of AlGaN/GaN heterostructures were systematically revealed by I-V-T and C-V-T measurements. (2) A new anodic etching process has been developed for the fabrication of HEMT devices.

为制备MESFET和HEMT器件，研究了金属/GaN、绝缘体/GaN和AlGaN/GaN异质结的界面特性。(1)测量的各种金属/n，p-GaN肖特基二极管的I-V-T和C-V-T特性，包括Richardson图以及有效肖特基势垒高度(SBH)和理想因子的温度依赖关系，可以用先前提出的“表面贴片”模型来解释。仅10^~(-5)~(-5)斑块面积的分数有效地降低了RT时的SBH，而不影响从C-V曲线推算的平带SBH。(2)由高温I-V曲线确定的真实SBH与金属功函数的关系很弱，对于n-GaN和p-GaN样品，其S值分别为0.28。(3)尽管金属/n-AlGaN样品的有效SBH在RT时显著降低，但由于隧穿电流的存在，真实的SBH比相应的金属/GaN样品的真实SBH要大得多。金属/GaN界面的控制氮气退火显著改善了I-V特性。GaN表面的热氧化导致了SBH的增加，但对二极管的性能没有明显的影响。GaN生长模拟：开发了考虑反位缺陷形成的MBE-GaN生长蒙特卡罗模拟程序，考察了生长条件对生长前表面平整度和缺陷密度的影响。通过C-t测量确定了SiO_2/GaN的深能级表征、体陷阱和界面态的俘获截面和激活能。AlGaN/GaN异质结的表征：(1)通过I-V-T和C-V-T测量系统地揭示了AlGaN/GaN异质结的电学性质。(2)为HEMT器件的制作开发了一种新的阳极刻蚀工艺。