Characterization and Control of Metal/GaN and Insulator/GaN Interfaces for Fabrication of MIS Field Effect Transistors

用于制造 MIS 场效应晶体管的金属/GaN 和绝缘体/GaN 界面的表征和控制

• 批准号: 10650316
• 负责人: SAWADA Takayuki
• 金额: $ 2.24万
• 依托单位: Hokkaido Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650316/
• 关键词: GaN; Schottky Diode; MIS Diode; Interface state density; Schottkv Barrier Height; I-V-T Characteristics; C-V Characteristics; Fermi Level; I-V特性

Electrical properties of metal/GaN (M-S) and insulator/GaN (I-S) interfaces have been investigated for the fabrication of MIS Field Effect Transistors.1. Characterization of M-S interfaces; (1) Fermi level at metal/GaN interface is unpinned, and the Schottky barrier height (SBH) is predominantly determined by the metal work function. (2) Reported large discrepancies in the SBH's between I-V and C-V measurements, scattered Richardson constants, temperature-dependent SBH, and appearance of I-V shoulder are well explained by additional leakage current arising from small "patchy" defect regions with low SBH's. (3) The sum of n- and p-GaN SBH's at room-temperature is rather small as compared with the GaN band gap while it becomes close to the GaN band gap at high-temperatures. These phenomena can be again explained by the proposed "patchy" model.2. Characterization of I-S interfaces; C-V measurements of Al/PCVD-SiOィイD22ィエD2/n-GaN structures revealed that the interface Fermi level locates at around 0.3 eV from the conduction band edge under thermal equilibrium condition and it can move within the upper forbidden band gap with the applied gate bias, indicating the feasibility of MISFET devices. A relatively small band bending for n-GaN surface was also confirmed from C-t measurement.3. Improvement of M-S and I-S interfaces; The uniformity of the SBH is greatly improved by an annealing in NィイD22ィエD2 (400-500℃), without any degradation of the Schottky characteristics. The observed I-V shoulder was considerably reduced with a fairly good n-value. For the I-S interface, a brief annealing in HィイD22ィエD2 (300-500℃) is highly effective to improve the interface properties, and the minimum interface state density is reduced below 1 X 10ィイD111ィエD1 cmィイD1-2ィエD1eVィイD1-1ィエD1

研究了金属/GaN（M-S）和绝缘体/GaN（I-S）界面的电学性质，以用于MIS场效应晶体管的制作. M-S界面的表征：（1）金属/GaN界面的费米能级是非钉扎的，肖特基势垒高度（SBH）主要由金属功函数决定。(2)所报道的I-V和C-V测量之间的SBH的大的差异，分散的理查森常数，温度依赖性SBH，和I-V肩的外观很好地解释了由小的“补丁”缺陷区域与低SBH的额外的漏电流。(3)在室温下的n-和p-GaN SBH的总和与GaN带隙相比相当小，而在高温下它变得接近GaN带隙。这些现象可以再次解释所提出的“补丁”模型。I-S界面的表征; Al/PCVD-SiO2/iD 22/iD 2/n-GaN结构的C-V测量显示，在热平衡条件下，界面费米能级位于距导带边缘约0.3eV处，并且可以随着施加的栅偏压而在上禁带间隙内移动，表明MISFET器件的可行性。从C-t测量中也证实了n-GaN表面有相对较小的能带弯曲. M-S和I-S界面的改善：在N_（22）N_（2观察到的I-V肩显著降低，n值相当好。对于I-S界面，在H_2O_2D_2D_2（300-500℃）中进行短暂退火对改善界面性质是非常有效的，最小界面态密度降低到1 × 10 ~（-1）Ω D_（111）Ω D_（1 -2）Ω D_（1 - 1）Ω D_（1 -1）Ω D_（1

项目成果

T.Sawada: "Electrical Properties of Metal/GaN and SiOィイD22ィエD2/GaN Interfaces and Effects of Thermal Annealing"Appl. Surf. Sci.. (to be published). 7 (2000)

T. Sawada：“金属/GaN 和 SiO2/GaN 界面的电学特性以及热退火的影响”Sci. 7 (即将出版)。

T.Sawada: "Electrical properties of Metal/n-GaN and PCVD-SiO_2/n-GaN Interfaces"Inst.Phys.Conf,Ser.. No.162. 775-780 (1999)

T.Sawada：“金属/n-GaN 和 PCVD-SiO_2/n-GaN 界面的电性能”Inst.Phys.Conf，Ser..No.162。

T.Sawada: "Electrical properties of Metal/GaN and SiO_2/GaN Interfaces and Effects of Thermal Annealing"Appl.Surf.Sci.. (to be published). 7 (2000)

T.Sawada：“金属/GaN和SiO_2/GaN界面的电学性质以及热退火的影响”Appl.Surf.Sci..（待出版）。

Y.Yamagata: "Potential Barrier Formed at n-ZnSe Regrowth Homointerface by Molecular Beam Epitaxy" J.Crystal Growth. (to be Published). 4pages (1999)

Y.Yamagata：“通过分子束外延在 n-ZnSe 再生长同质界面形成的潜在势垒”J.Crystal Growth。

M. Sawada: "Electrical Characterization of n-GaN Schotky and PCVD-SiO_2/n-GaN Interfaces"J.Crystal Growth. 189/190. 706-710 (1998)

M. Sawada：“n-GaN 肖特基和 PCVD-SiO_2/n-GaN 界面的电气特性”J.Crystal Growth。