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Low temperature deposition of Al_2O_3 insulating thin films by photo-CVD

光CVD低温沉积Al_2O_3绝缘薄膜

基本信息

批准号：
63550235
负责人：
SARAIE Junji
金额：
$ 1.34万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

项目摘要

Al_2O_3 thin films were deposited by photo-CVD using Aluminum- triisopropoxide(ATI) as a source material, and their properties were characterized. 1. The deposition rate increased under N_2+O_2 or N_2+H_2 atmosphere compared with that under N_2 atmosphere (without UV). The activation energy of deposition was 1.5 kcal/mol and 3.5 kcal/mol for N_2+O_2 and N_2+H_2 atmosphere, respectively. These values are small compared with the value of 18-20 kcal/mol for the decomposition deposition under the N_2 atmosphere, which shows that reactions of ATI with O_2 or H_2 help Al_2O_3 deposition. It turned out from the O_2 flow rate dependence of the deposition rate that the deposition due to the Langmuir-Hinshelwood mechanism of ATI and O_2 molecules occurred as well as the deposition due to the thermal decomposition of ATI.With UV irradiation of low-pressure Hg lamps under N_2+O_2 atmosphere, the deposition rate increased largely at low substrate temperatures less than 300 C, and the activation energy of the deposition reaction was as small as 1.5 kcal/mol. The deposition rates were almost constant in the O_2 flow rate range of 60 - 300 sccm. The 185 nm light from the Hg lamps was found to be strongly responsible for the increase in the deposition rate. 2. The Al_2O_3 films deposited were characterized mainly by the dielectric loss factor tan at, 100 Hz. The samples prepared by photo-CVD under N_2+O_2 atmosphere at 260 C showed smaller tan values compared with those of the samples prepared by thermal CVD under N_2 or N_2+O_2 atmosphere, that is, the film quality was improved largely by photo-CVD. The values of tan were almost constant under the conditions of the O_2 flow rate of 20 - 300 sccm and the substrate temperature of 280 - 340 C. The typical value of tan was 2.5 % at the substrate temperature of 280 C.In conclusion, Al_2O_3 films with high quality were obtained at high deposition rates at low substrate temperatures less than 300 C by photo-CVD under N_2+O_2 atmosphere.

以三异丙醇铝（ATI）为原料，采用光化学气相沉积法制备了Al_2O_3薄膜，并对其性能进行了表征。1.在N_2+O_2或N_2+H_2气氛下，沉积速率比在N_2气氛下（无UV）有所提高。在N_2+O_2和N_2+H_2气氛下，沉积活化能分别为1.5 kcal/mol和3.5 kcal/mol。与N_2气氛下分解沉积的18-20 kcal/mol相比，这些值很小，说明ATI与O_2或H_2的反应有助于Al_2O_3的沉积。从O_2流量对沉积速率的依赖关系可以看出，在N_2+O_2气氛下，ATI和O_2分子的Langmuir-Hinshelwood机理沉积以及ATI的热分解机理沉积同时发生.在低压汞灯紫外辐照下，在低于300 ℃的低衬底温度下，沉积速率大大提高，沉积反应的活化能为1.5kcal/mol。O_2流量在60 - 300 sccm范围内，沉积速率基本不变。发现来自Hg灯的185 nm的光是沉积速率增加的主要原因。2.沉积的Al_2O_3薄膜主要通过100 Hz下的介电损耗因子tan来表征。在260 ℃ N_2+O_2气氛下光化学气相沉积制备的样品比在N_2或N_2+O_2气氛下热化学气相沉积制备的样品具有更小的tan值，即光化学气相沉积大大提高了薄膜质量。在O_2流量为20 - 300 sccm，衬底温度为280 - 340 ℃的条件下，tan δ值基本不变。在280 ℃的衬底温度下，tan δ的典型值为2.5%。总之，在N_2+O_2气氛下，在低于300 ℃的低衬底温度下，用光化学气相沉积法在高沉积速率下获得了高质量的Al_2O_3薄膜。