Topographic analyzer for electronic structures of semiconductors

半导体电子结构形貌分析仪

• 批准号: 08555018
• 负责人: SARAIE Junji
• 金额: $ 9.47万
• 依托单位: KYOTO INSTITUTE OF TECHNOLOGY (1997)Kyoto University (1996)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555018/
• 关键词: photoluminescence; high spatial resolution; low temperature; confocal microscope; electronic structure; piezo actuator; photoluminescence image; nano structure

In this project, a novel analyzer has been developed to obtain an image of photoluminescence (PL), optical properties, or optoelectronic properties with a spatial resolution close to the diffraction limit at a low temperature. The analyzer consists of an objective with a high magnification, a novel developed thermal isolation, and an anti-vibration mechamism. A sample is scanned with piezo actuators to obtain the signal image. The sample is cooled down by a cold head with liquid He. A clear reflectance image of SiO_2/Si with a microstructure was obtained at 15 K with a spatial resolution of 0.8 mum. The spatial resolution closes to the theoretical limit determined with the wavelength of the light (632nm) and the numerical aperture of the objective (NA=0.09).GaAs_<1-x>P_x (0.2<x<0.7) was grown on a Si substrate with a GaP buffer layr by metalorganic molecular beam epitaxy. The epilayr showed a spatial fluctuation of composition x. Using spatially reesolved PL,the dependence of PL emitted from GAAs_<1-x>P_x on composition x was precisely characterized. Peaks observed in PL of GaAs_<1-x>P_x was attributed to donor-acceptor pairs related to vacancies in epilayrs based on the results of the spatially resolved PL.The topographic analyzer enables to investigate electronic structures of micro- and nano-structure of semiconductors with a higher sensitivity than that of an optical probe microscope. The topographic analyzer will open a new approach to study semiconductor materials and devices.

在本项目中，开发了一种新型分析仪，用于在低温下以接近衍射极限的空间分辨率获得光致发光（PL），光学性质或光电性质的图像。该分析仪由高倍率物镜、新开发的热隔离和抗振动机构组成。用压电致动器对样品进行扫描以获得信号图像。样品用He液冷头冷却。在15k下获得了具有微观结构的SiO_2/Si的清晰反射率图像，空间分辨率为0.8 μ m。空间分辨率接近由光波长（632nm）和物镜数值孔径（NA=0.09）确定的理论极限。采用金属有机分子束外延法在有GaP缓冲层的Si衬底上生长出GaAs_<1-x>P_x （0.2<x<0.7）。利用空间分辨的PL，精确表征了GAAs_<1-x>P_x发射的PL与成分x的依赖关系。基于空间分辨PL的结果，在GaAs_<1-x>P_x的PL中观察到的峰归因于与薄膜中空位相关的供体-受体对。地形分析仪能够以比光学探针显微镜更高的灵敏度研究半导体的微观和纳米结构的电子结构。地形分析仪将为研究半导体材料和器件开辟一条新的途径。

项目成果

Masahiro Yoshimoto: "GaN Growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy" J.Crystal Growth. (印刷中). (1998)

Masahiro Yoshimoto：“通过金属有机分子束外延在蓝宝石和 6H-SiC 上生长 GaN”J.Crystal Growth（印刷中）。

Masahiro Yoshimoto: "GaN Growth on sapphire and 6H-SiC by metalorganic molecular beam epiaxy" J.Crystal Growth. (印刷中). (1998)

Masahiro Yoshimoto：“通过金属有机分子束外延在蓝宝石和 6H-SiC 上生长 GaN”J.Crystal Growth（印刷中）。

Masahiro Yoshimoto: "Growth of Iuminescent GaAsP on Si substrate by metalorganic moleculer beam epitaxy using GaP buffer layer" Japanese J. Applied Physics. 37(印刷中). (1998)

Masahiro Yoshimoto：“使用 GaP 缓冲层通过金属有机分子束外延在 Si 衬底上生长发光 GaAsP”，日本应用物理杂志 37（出版中）。

Masahiro Yoshimoto: "Growth of Iuminescent GaAsP on Si substrate by metalorganic moleculer beam epitaxy using GaP buffer layer" Japanese J.Applied Physics. 37(印刷中). (1998)

Masahiro Yoshimoto：“使用 GaP 缓冲层通过金属有机分子束外延在 Si 衬底上生长发光 GaAsP”，日本应用物理杂志 37（出版中）。

Masahiro Yoshimoto, Yasuhiro Watanabe, Hiroyuki Matsunami: "Growth of luminescent GaAsP on Si substrate by metalorganic molecular beam epitaxy using Gap buffer layr" Japanese J.Applied Physics. 37, (in press). (1998)

Masahiro Yoshimoto、Yasuhiro Watanabe、Hiroyuki Matsunami：“使用间隙缓冲层通过金属有机分子束外延在硅衬底上生长发光 GaAsP”日本 J.应用物理学。